Texas Instruments Corporation

August J Fischer

Tae S Kim

Jin Zhao

Nathan J Kruse

Ralf B Willecke

Jiong-Ping Lu

Wei-Yung Hsu

Ming-Jang Hwang

A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.

Bi-layer etch stop process for defect reduction and via stress migration improvement

In situ nitridation of a thin layer of either silicon or tungsten provides an adhesive layer for bulk deposition of tungsten. Alternatively, a thin layer of silicon can be deposited directly on a dielectric, then reacted with WF6 to replace the silicon with tungsten, which provides a nucleation layer for bulk tungsten deposition.

Methods for chemical vapor deposition of tungsten on silicon or dielectric

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Dallas, TX, United States of America

August J Fischer