L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

Audrey Pinchart

Nicolas Blasco

Christian Dussarrat

Christophe Lachaud

Andreas Zauner

Ziyun Wang

Anthony Correia-Anacleto

Jean-Marc Girard

Satoko Gatineau

Antony Correia-Anacleto

Denis Jahan

Antony Correia - Anacleto

Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe), Zr(EtCp)(NMe), ZrCp(NMe), Zr(MeCp)(NEtMe), Zr(EtCp)(NEtMe), ZrCp(NEtMe), Zr(MeCp)(NEt), Zr(EtCp)(NEt), ZrCp(NEt), Zr(iPrCp)(NMe), Zr(tBuCp)(NMe), Hf(MeCp)(NMe), Hf(EtCp)(NMe), HfCp(NMe), Hf(MeCp)(NEtMe), Hf(EtCp)(NEtMe), HfCp(NEtMe), Hf(MeCp)(NEt), Hf(EtCp)(NEt), HfCp(NEt), Hf(iPrCp)(NMe), Hf(tBuCp)(NMe), and mixtures thereof; and depositing the dielectric film on the substrate.

Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

Methods of forming dielectric films, new precursors and their use in semiconductor manufacturing

A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of: wherein:

Method of forming a tantalum-containing layer on a substrate

Disclosed are methods for forming a metal-containing layer on a substrate. The methods include providing a vapor and at least one reaction gas and reacting the vapor and the reaction gas with the substrate by a deposition process. The vapor may be selected from the group consisting of (Cp)V(&#x2550;NtBu)(NEt); (Cp)V(&#x2550;NtBu)(NMe); (Cp)V(&#x2550;NtBu)(NEtMe); (Cp)V(&#x2550;NiPr)(NEt); (Cp)V(&#x2550;NiPr)(NMe); (Cp)V(&#x2550;NiPr)(NEtMe); (Cp)V(&#x2550;NCH)(NEt); (Cp)V(&#x2550;NCH)(NMe); (Cp)V(&#x2550;NCH)(NEtMe); (Cp)Nb(&#x2550;NtBu)(NEt); (Cp)Nb(&#x2550;NtBu)(NMe); (Cp)Nb(&#x2550;NtBu)(NEtMe); (Cp)Nb(&#x2550;NiPr)(NEt); (Cp)Nb(&#x2550;NiPr)(NMe); (Cp)Nb(&#x2550;NiPr)(NEtMe); (Cp)Nb(&#x2550;NCH)(NEt); (Cp)Nb(&#x2550;NCH)(NMe); and (Cp)Nb(&#x2550;NCH)(NEtMe). The reaction gas may be selected from the group consisting of hydrogen, hydrogen sulfide, hydrogen selenide, hydrogen telluride, carbon monoxide, ammonia, organic amine, silane, disilane, higher silanes, silylamines, diborane, hydrazine, methylhydrazine, chlorosilane, chloropolysilane, metal alkyl, arsine, phosphine, trialkylboron, oxygen, hydrogen peroxide, nitrous oxide, nitrogen monoxide, nitrogen dioxide, alcohols, plasma comprising fragments of those species, and combinations thereof.

Niobium and vanadium organometallic precursors for thin film deposition

Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(MeCp)(OR), wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.

Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process

Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I):(MM)ON,&#x2003;&#x2003;(I)wherein 0&#x2266;a&#x3c;1, 0&#x3c;b&#x2266;3, 0&#x2266;c&#x2266;1, Mrepresents a metal selected from (Hf), (Zr) and (Ti); and Mrepresents a metal atom atoms, which comprises the following steps:

Methods of depositing a metal containing dielectric film on a substrate are disclosed. The metal containing dielectric film has the formula (MM) ON, wherein 0&#x2266;a&#x3c;1, 0&#x3c;b&#x2266;3, 0&#x2266;c&#x2266;1, Mrepresents a metal selected from (Hf) or (Zr); and Mrepresents a metal atom. The method generally uses an Mmetal containing precursor selected from: Zr(MeCp)(NMe), Zr(EtCp)(NMe), ZrCp(NMe), Zr(MeCp)(NEtMe), Zr(EtCp)(NEtMe), ZrCp(NEtMe), Zr(MeCp)(NEt), Zr(EtCp)(NEt), ZrCp(NEt), Zr(iPrCp)(NMe), Zr(tBuCp)(NMe), Hf(MeCp)(NMe), Hf(EtCp)(NMe), HfCp(NMe), Hf(MeCp)(NEtMe), Hf(EtCp)(NEtMe), HfCp(NEtMe), Hf(MeCp)(NEt), Hf(EtCp)(NEt), HfCp(NEt), Hf(iPrCp)(NMe), or Hf(tBuCp)(NMe).

Method of depositing a metal-containing dielectric film

Disclosed are methods for forming a metal-containing layer on a substrate. A vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt); (Cp)V(=NtBu)(NMe); (Cp)V(=NtBu)(NEtMe); (Cp)V(&#x2550;NiPr)(NEt); (Cp)V(&#x2550;NiPr)(NMe); (Cp)V(&#x2550;NiPr)(NEtMe); (Cp)V(&#x2550;NCH)(NEt); (Cp)V(&#x2550;NCH)(NMe); (Cp)V(&#x2550;NCH)(NEtMe); (Cp)Nb(=NtBu)(NEt); (Cp)Nb(=NtBu)(NMe); (Cp)Nb(=NtBu)(NEtMe); (Cp)Nb(&#x2550;NiPr)(NEt); (Cp)Nb(&#x2550;NiPr)(NMe); (Cp)Nb(&#x2550;NiPr)(NEtMe); (Cp)Nb(&#x2550;NCH)(NEt); (Cp)Nb(&#x2550;NCH)(NMe); and (Cp)Nb(&#x2550;NCH)(NEtMe)is provided. At least one reaction gas selected from the group consisting of ozone and water is provided. The vapor and the reaction gas react with the substrate according to a deposition process to form the metal-containing layer on at least one surface of the substrate. 

The present invention relates to a process for depositing films on a substrate by chemical vapour deposition (CVD) or physical vapour deposition (PVD), said process employing at least one boron compound. This process is particularly useful for fabricating photovoltaic solar cells. The invention also relates to the use of boron compounds for conferring optical and/or electrical properties on materials in a CVD or PVD deposition process. This process is also particularly useful for fabricating a photovoltaic solar cell.

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Antony, France

Audrey Pinchart