Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Thales

Université De Limoges

Centre National De La Recherche Scientifique

Audrey Martin

Sylvain Delage

Olivier Jardel

Stéphane Piotrowicz

Raymond Quere

Philippe Bouysse

A power switching cell, and associated multi-level converter, include an input port capable of receiving a switching control signal, an input transistor linked by the gate to the input port, and by the source to a reference voltage, a self-biasing circuit comprising a self-biasing transistor linked by the gate to the drain of the input transistor, and a resistor connected in parallel between the gate and the source of the self-biasing transistor, and in series between the drain of the input transistor and the source of the self-biasing transistor, a power transistor, linked by the gate to the source of the self-biasing transistor and by the drain to a power supply voltage, and an isolating transistor linked by the gate and by the source to the gate and to the source of the power transistor, and by the drain to the output port of the cell.

Insulated power switching cell

A power switching cell with normally on field-effect transistors comprises a current switch receiving the control input signal over an activation input and a power transistor for switching a high voltage Vapplied to its drain, to its source that is connected to the output port of the cell. The control of the gate of the power transistor whose source is floating, according to the input signal, is provided by a self-biasing circuit connected between its gate and source. The current switch is connected between the self-biasing circuit and a zero or negative reference voltage. The self-biasing circuit comprises a transistor whose source or drain is connected to the gate or source of the power transistor. The gate of this transistor is biased by a resistor connected between its gate and source, and between the current switch and the source. The transistors are HEMT transistors using GaN or AsGa technology.

Power switching cell with normally conducting field-effect transistors

Growing community of inventors

Rilhac-Rancon, France

Audrey Martin