Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Safran

Freescale Semiconductor,inc.

Nxp Usa, Inc.

Audrey Berthelot

Philippe Robert

Vincent Larrey

Jean-Philippe Polizzi

Mikaël Colin

Marie-Hélène Vaudaine

Eric Ollier

Hemant D Desai

Loic Joet

Alain Jeanroy

Woo Tae Park

Laurent Vandroux

Sophie Giroud

Guillaume Lehee

Marie-Helene Vaudaine

Mikael Colin

Philippe Onfroy

Jean-Sébastien Mace

Hemant Desai

Olivier Vancauwenberghe

Process for producing semiconductor devices in a substrate, comprising: photolithography of a pattern of a reticle onto a portion of the substrate, defining first elements of the semiconductor devices, an exposure of the pattern being repeated a plurality of times in order to define all of the devices, photolithography of a pattern of an etch mask over all of the substrate, etching photolithography patterns into one portion of the thickness of the substrate, wherein first dicing lanes encircling the devices are included in the pattern of the etch mask and/or of the reticle, and the photolithography of the etch mask defines second dicing lanes defined by predetermined fracture lines of the edges of the substrate, and furthermore comprising the implementation of a step of irradiating the substrate with a laser beam through the first and second dicing lanes.

Method of producing semiconductor devices in a substrate including etching of the pattern of an etch mask and/or a reticle to create the first dicing lanes encircling the devices and second dicing lanes defined by fracture lines of the edges of the substrate

Disclosed is a hinged MEMS and/or NEMS device with out-of-plane movement including a first portion and a second portion that is hinged so as to be able to rotate with respect to the first portion about an axis of rotation contained in a first mean plane of the device. The device also includes a hinging element that connects the first portion and the second portion and that is stressed flexurally and a sensing element that extends between the first portion and the second portion and that deforms during the movement of the second portion. Finally, the device includes two blades that extend perpendicularly to the mean plane of the hinge device and parallel to the axis of rotation, the blades being placed between the hinging element and the sensing element and connecting the first portion and the second portion and being stressed torsionally during the movement of the second portion.

Hinged microelectromechanical and/or nanoelectromechanical device with out-of-plane movement

A microdevice () comprising a movable element () capable of moving relative to a fixed part (), produced in first and second layers of material () arranged one above the other such that the movable element comprises a portion () of the first layer and a portion () of the second layer secured to each other, and wherein the movable element is suspended from the fixed part by a suspension structure () formed in the first and/or second layer of material.

Microdevice comprising at least two movable elements

Micro-device having a plurality of mobile elements arranged in a plurality of embedded cavities

Method for making a N/MEMS device including a structure provided with an active part having a first suspended element and a second suspended element with different thicknesses, the method comprising the following steps of:

Method for making suspended elements with different thicknesses for a MEMS and NEMS structure

A microsystem and/or nanosystem type device is disclosed, comprising:

Method for making a suspended membrane structure with buried electrode

The process for the production of at least one silicon-based nanoelement (), in particular a nanowire, comprises the following stages: providing a substrate comprising, at the surface, a first layer () comprising electrically doped silicon; forming, on the first layer (), a second layer () based on silicon oxide with carbon atoms () dispersed in the said second layer (); and exposing the first and second layers () to an oxidizing atmosphere, so as to oxidize at least a first section () of the first layer () at the interface of the said first layer () with the second layer () and to form the said at least one nanoelement () at the said first section ().

Process for producing at least one silicon-based nanoelement in a silicon oxide section and process for the manufacture of a device employing the production process

A process is provided for producing at least one interconnecting well to achieve a conductive pathway between at least two connection layers of a component comprising a stack of at least one first substrate and one second substrate which are electrically insulated from one another, the process including defining a surface contact region of a surface connection layer over a surface of the stack and of at least one first contact region embedded in the stack starting from a first embedded connection layer of the first substrate. A region devoid of material is positioned between the first substrate and second substrates and which comprises a stage of producing a interconnecting well which passes through the second substrate and extends between the surface contact region and the first embedded contact region and passes through the region devoid of material, and also a first layer which covers the first embedded connection layer.

Process for producing vertical interconnections through structured layers

A device being a micro-system and/or a nano-system which includes a first substrate, having at least one lower electrode and at least one dielectric layer, and includes an intermediate substrate extending across a main plane of the device and including a moving portion. The intermediate substrate is attached, outside the moving portion, by molecular bonding to the first substrate. The moving portion faces at least a portion of the lower electrode. The device also includes an upper substrate, attached to the intermediate substrate. The moving portion is movable between the lower electrode and the upper substrate. The first, intermediate, and upper substrates extend in a plane parallel to the main plane of the device. The lower electrode detects a component of the movement of the moving portion perpendicular to the plane of the device.

Structure with a moving portion and a buried electrode for movement detection included in a multi-substrate configuration

A method for making a microelectronic device including, on a same substrate, at least one electro-mechanical component including a mobile structure of a monocrystalline semi-conductor material and a mechanism actuating and/or detecting the mobile structure, and with at least one transistor. The method a) provides a substrate including at least one first semi-conducting layer including at least one region in which a channel area of the transistor is provided, b) etches a second semi-conducting layer based on a given semi-conductor material, lying on an insulating layer placed on the first semi-conducting layer, to form at least one pattern of the mobile structure of the component in an area of monocrystalline semi-conductor material of the second semi-conducting layer, and at least one pattern of gate of the transistor on a gate dielectric area located facing the given region.

Making of a microelectronic device including a monocrystalline silicon NEMS component and a transistor the gate of which is made in the same layer as the mobile structure of this component

Growing community of inventors

St. Ismier, France

Audrey Berthelot