Mellanox Technologies, Ltd.

Attila Fülöp

Elad Mentovich

Moshe Oron

Isabelle Cestier

Anders Gösta Larsson

Oren Steinberg

Processes for continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices are provided. An example process includes forming, onto one or more semiconductor layers of an electro-optical semiconductor device, a first semiconductor layer associated with a first bandgap value and forming, onto the first semiconductor layer, a grading layer associated with a continuous compositional grading. The example method further includes forming, onto the grading layer, a second semiconductor layer associated with a second bandgap value. The second bandgap value is different than the first bandgap value.

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Gothenburg, Sweden

Attila Fülöp