Mellanox Technologies, Ltd.

Attila Fülöp

Elad Mentovich

Oren Steinberg

Moshe Oron

Dimitrios Kalavrouziotis

Isabelle Cestier

Anders Larsson

Filip Leonard Hjort

Anders Gosta Larsson

Anders Gösta Larsson

Various embodiments provide a PIN-photodetector configured to detect light characterized by a particular wavelength range. The photodetector includes an absorber region including a material having an absorption coefficient of greater than 10cmin the particular wavelength range. The absorber region has an absorber thickness in a direction that is substantially parallel to a detection axis of the photodetector. The photodetector further includes a collector region including a material that is substantially transparent to the particular wavelength range. The collector region has a collector thickness in the direction that is substantially parallel to the detection axis. The collector thickness is greater than the absorber thickness. The absorber region does not spatially overlap with the collector region. The photodetector is configured to operate at a bandwidth of at least 50 GHz.

High-speed, large-area separate absorption and drift photodetector

Processes for continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices are provided. An example process includes forming, onto one or more semiconductor layers of an electro-optical semiconductor device, a first semiconductor layer associated with a first bandgap value and forming, onto the first semiconductor layer, a grading layer associated with a continuous compositional grading. The example method further includes forming, onto the grading layer, a second semiconductor layer associated with a second bandgap value. The second bandgap value is different than the first bandgap value.

Continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices

Apparatuses, systems, and associated methods are described that provide an optical device with sealed optoelectronic component(s) without impacting effective optical performance of the optical device. An example optical device includes a substrate that defines a first surface and a second surface opposite the first surface. The optical device further includes an optoelectronic component supported by the first surface of the substrate where the optoelectronic component operates with optical signals. The optical device further includes a conformal coating applied to the first surface of the substrate such that at least a portion of the conformal coating is disposed on the optoelectronic component. The conformal coating substantially seals the optoelectronic component from an external environment of the optical device without impacting effective optical performance of the optical device. A thickness of the conformal coating may be determined based upon one or more operating parameters of the optoelectronic component.

Sealed optoelectronic components and associated optical devices

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Gothenburg, Sweden

Attila Fülöp