Adeka Corporation

Samsung Electronics Co., Ltd.

Asahi Denka Co., Ltd.

International Superconductivity Technology Center, the Juridical Foundation

Swcc Showa Cable Systems Co., Ltd.

Atsuya Yoshinaka

Atsushi Sakurai

Senji Wada

Naoki Yamada

Youn-Joung Cho

Tomoharu Yoshino

Jung-sik Choi

Haruyoshi Sato

Kyoo-Chul Cho

Junji Ueyama

Masako Shimizu

Jin-Seo Lee

Kazuhisa Onozawa

Tetsuji Abe

Akimasa Yajima

Tomotaka Goto

Daisuke Takagi

The &#x3b2;-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the &#x3b2;-ketoimine ligand. A method of forming the &#x3b2;-ketoimine ligand and a method of forming a thin film using the metal complex compound including &#x3b2;-ketoimine ligand are provided.

&#x3b2;-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same

Disclosed are a composition for forming a zinc oxide-based film, said composition containing, as an essential component, a zinc compound represented by the following formula (1): wherein Rand Rmutually independently represent an alkyl group having 1 to 4 carbon atoms, a process for producing the zinc oxide-based film, and the zinc compound. The composition makes it possible to form a high-quality zinc oxide-based film, which has transparency, homogeneity and electrical conductivity, at a low temperature of 300&#xb0; C. or lower.

Zinc oxide film-forming composition, zinc oxide film production method, and zinc compound

A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin.  In formula (1), M is titanium, zirconium, or hafnium; X is a halogen atom; and m is 1 or 2.

Metal compound, material for chemical vapor phase growth, and process for forming metal-containing thin film

Disclosed is a composition for forming a thick oxide superconductor film, the oxide being an RE-BA&#x2014;Cu based oxide, wherein RE is at least one element selected from the group consisting of Y, Nd, Sm, Gd, Eu, Yb, Pr, and Ho. The composition contains an RE salt of a keto acid having 4 to 8 carbon atoms as an RE component, barium trifluoroacetate as a Ba component, at least one copper salt selected from the group consisting of a copper salt of a branched saturated aliphatic carboxylic acid having 6 to 16 carbon atoms and a copper salt of an alicyclic carboxylic acid having 6 to 16 carbon atoms as a Cu component, and an organic solvent dissolving these metal salt components. In the composition, the RE to Ba to Cu molar ratio is 1:1.3 to 2.2:2.4 to 3.6 and the content of the organic solvent is 25% to 80% by weight.

Composition for forming thick oxide superconductor film and process for producing thick tape-shaped oxide superconductor film

A coating formulation contains the following components (A), (B) and (C): (A) an organic acid-titanium compound having at least one titanium atom and at least one Caliphatic organic acid residual group as essential constituents and having no constituent other than the essential constituents, (B) fine particles of a titanate-based compound, said fine particles having an average particle size of from 10 to 100 nm, and (C) an organic solvent. A content of the components (A) is from 0.1 to 1.5 mol/kg in terms of titanium atoms, and a content of the component (B) is from 0.1 to 1.5 mol/kg in terms of titanium atoms. A production process for a titanate-based ceramic film, which makes use of the coating formulation, is also disclosed.

Coating formulation and process for the production of titanate-based ceramic film with the coating formulation

Process of forming thin film and precursor for chemical vapor deposition

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Tokyo, Japan

Atsuya Yoshinaka