Pioneer Corporation

Nikkiso Company Limited

Air Water Biodesign Inc.

Atsuya Ito

Kiyoshi Tateishi

Tomoya Murakami

Akari Agata

Genki Adachi

Yoshinori Kimura

Wataru Onodera

Ikuya Kikuchi

Mamoru Miyachi

Hirokazu Takahashi

Ryohei Kagawa

Hiroyuki Ota

Atsushi Watanabe

Mitsuru Sato

Toshiyuki Tanaka

Shuntaro Mori

Atushi Watanabe

Kagawa Ryohei

Masaki Goma

A flow velocity determining apparatus () includes an irradiating unit () that emits irradiation light (L) toward a liquid mixture (BL) which contains a non-spherical solid (BC) and a liquid (BP) and flows through a flow path (TB), a detecting unit () that detects reflected light (L) emitted by the irradiating unit () and reflected by the liquid mixture (BL) flowing through the flow path (TB), the detecting unit () being disposed on at least one side of an optical axis (LA) of the reflected light (L) when seen in a plan view of an imaginary plane including an optical axis (LA) of the irradiation light (L) and the optical axis (LA) of the reflected light (L), and a determining unit () that determines a flow velocity of the liquid mixture (BL) by using a light amount of the reflected light (L) detected by the detecting unit ().

Flow velocity determining apparatus

This fluid evaluation device is provided with an irradiation unit for irradiating a fluid with light, a light reception unit for receiving scattered light from the fluid and outputting a light reception signal, and an estimation unit for estimating at least one from among flow rate and density by mapping input points, which are on a first plane defined by flow rate and frequency and are expressed by light amount information indicating the amount of scattered light included in the light reception signal and frequency information indicating a frequency for a beat signal resulting from the Doppler shifting of the light included in the light reception signal, onto a second plane defined by fluid flow rate and fluid density.

Fluid evaluation apparatus and method, computer program, and recording medium

This fluid measuring device is provided with: an irradiation unit that irradiates a fluid with light; a light receiving unit that receives light scattered by the fluid; a detecting unit that detects a backflow of the fluid on the basis of a light reception signal from the light receiving unit; and a calculating unit that calculates, on the basis of the detection result by the detection unit and the light reception signal from the light receiving unit, estimated fluid information indicating the flow rate or flow speed of the fluid. Accordingly, even when a backflow of the fluid temporarily occurs, the flow speed of the fluid can be precisely measured.

Fluid measuring device

A measuring apparatus is provided with: an irradiator configured to irradiate fluid with light; a first light receiver configured to receive a forward scatter component of scattered light scattered by the fluid; a second light receiver configured to receive a backscatter component of the scattered light; a third light receiver configured to receive a side scatter component of the scattered light; and an outputting device configured to output fluid information about the fluid, which is obtained on the basis of light receiving signals of the first light receiver, the second light receiver, and the third light receiver. According to this measuring apparatus, it is possible to output accurate fluid information because of the use of the forward scatter component, the backscatter component, and the side scatter component of the scattered light.

Apparatus and method for measuring fluid information from light scattering

These measurement devices are each provided with: irradiation unit that irradiate a fluid with light; a light-receiving unit that receives light scattered by the fluid; an acquiring unit that acquires fluid information which indicates the flow rate or the flow velocity of the fluid; and a control unit that controls the irradiation unit on the basis of the fluid information.

Measuring apparatus

A light detecting apparatus includes: a first photoelectric conversion element unit () and a second photoelectric conversion element unit () each of which converts input light to an electric current and output it; an optical current transducer unit () for outputting, as a detected current, a differential current between an electric current outputted by the first photoelectric conversion element unit and an electric current outputted by the second photoelectric conversion element unit; and a first current/voltage converting unit () for amplifying the detected current outputted from the optical current transducer unit, converting it to a voltage signal, and outputting the voltage signal.

Light detecting apparatus and fluid measuring apparatus

The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.

Semiconductor light-emitting element and method of manufacturing the same

A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa ) In N (0&lE;x&lE;1, 0&lE;y&lE;1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Al Ga In N (0&lE;x&prime;&lE;1, 0&lE;y&prime;&lE;1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Al Ga In N (0&lE;x&Prime;&lE;1, 0&lE;y&Prime;&lE;1) and deposited filling the aperture of the current constricting layer, and a clad layer made of Al Ga In N (0&lE;u&lE;1, 0&lE;v&lE;1) and deposited on the electrode-side guide layer.

Growing community of inventors

Kawagoe, Japan

Atsuya Ito