Denso Corporation

Kabushiki Kaisha Toyota Chuo Kenkyusho

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Toyoda Gosei Co., Ltd.

Atsuto Okamoto

Naohiro Sugiyama

Kazukuni Hara

Nobuo Kamiya

Toshihiko Tani

Fusao Hirose

Shoichi Onda

Yasuo Kitou

Kouki Futatsuyama

Emi Oguri

Yoshiaki Fukushima

Tsuyoshi Nomura

Kunihiko Hara

Toshiyasu Ito

Takeshi Miyazaki

Tomoyoshi Motohiro

Hiroyuki Kondo

Yukihisa Ueno

Daisuke Nakamura

Hiroaki Wakayama

Takeshi Ohwaki

Masahiro Hanazawa

Yukio Miyachi

Tadashi Ito

Haruyoshi Kuriyama

Emi Makino

Riichiro Ohta

Takashi Onoda

Takeshi Hasegawa

Tomoyuki Koga

An antenna device is provided with a first connecting electrode, a first tunnel diode, a first antenna member and a fixed electrode. The first connecting electrode is configured to be connected to a fixed potential via a load. The first tunnel diode has a pair of electrodes. One of the electrodes of the first tunnel diode is connected to the first connecting electrode, and the other electrode of the first tunnel diode is connected to the first antenna member. The first antenna member has a conductive property and includes a first portion and a second portion. The first portion of the first antenna member is connected to the other electrode of the first tunnel diode. The fixed electrode is connected to the second portion of the first antenna member. The fixed electrode is configured to be connected to the fixed potential.

Antenna devices

A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; heating the gas at an upstream side from the substrate in a gas flow path; keeping a temperature of the substrate at a predetermined temperature lower than the gas so that the single crystal is grown from the substrate; heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate; and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber.

Equipment and method for manufacturing silicon carbide single crystal

In a pressure-welded semiconductor device where at least one semiconductor element is disposed inside a casing, a buffer conductive layer including conductive carbons is disposed at pressure-welded portions between first casing-side electrodes and element-side electrodes disposed on a first main surface and at pressure-welded portions between second casing-side electrodes and element-side electrodes disposed on a second main surface.

Pressure-welded semiconductor device

It is the purpose of the present invention to prevent a macroscopic defect in the production of an SiC single crystal. SiC source material powder and an SiC seed crystal are disposed inside a graphite crucible, and the SiC source material powder is thermally sublimated and recrystallized on a front surface of the SiC seed crystal to grow an SiC single crystal. In this sublimation-recrystallization method, a protection layer is provided on a back surface of the SiC seed crystal. The SiC seed crystal is mechanically supported by a supporting part disposed on the graphite crucible without bonding. Thereby, it is possible to improve the thermal maldistribution on the back surface of the SiC seed crystal and possible to suppress damage of the protection layer due to the thermal maldistribution. Thus, macroscopic defects in the grown SiC single crystal are preferably suppressed.

Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal

A crucible for growing a single crystal therein has a seed crystal attachment portion and a peripheral portion surrounding the seed crystal attachment portion through a gap provided therebetween. The seed crystal attachment portion has a support surface for holding a seed crystal on which the single crystal is to be grown, and the support surface is recessed from a surface of the peripheral portion. The seed crystal is attached to the support surface to cover an entire area of the support surface. Accordingly, no poly crystal is formed on the seed crystal attachment portion, and the single crystal can be grown on the seed crystal with high quality.

Method and apparatus for fabricating high quality single crystal

Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened on the surface of the silicon carbide single crystal (SiC substrate) is sealed up with a coating material. Then heat treatment is performed so as to saturate the inside of the micropipe defects with silicon carbide vapors. By this, the micropipe defects existing in the SiC substrate can be closed within the SiC substrate, not in a newly grown layer. Further, the micropipe defects can be efficiently closed by filling the micropipe defects with a silicon carbide material by preliminarily using super critical fluid and the like.

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same

An easy and low-cost method of producing a large-size and high-purity silicon carbide (SiC) single crystal includes reacting silicon vapor directly with a carbon-containing compound gas under a heated atmosphere (growth space 14) to grow a silicon carbide single crystal (15) on a silicon carbide seed crystal (12), in which the silicon vapor generated from molten silicon (13) is used as a silicon vapor source, and a hydrocarbon gas (9) (e.g., propane gas) is used as the carbon-containing compound gas.

Method of producing silicon carbide single crystal

In a method of producing single crystals on a seed crystal, the seed crystal is covered by a protection layer except for a surface on which the single crystals are to be formed. The protection layer is made of material such as carbon or the like, which is stable in a step of forming the single crystals. As a result, a temperature gradient and mass transfer in the seed crystal can be prevented, whereby quality of the single crystals formed on the seed crystal can be improved.

Method of producing single crystals and a seed crystal used in the method

Growing community of inventors

Nagoya, Japan

Atsuto Okamoto