Olympus Optical Company, Ltd.

Atsushi Yusa

Jun-ichi Nishizawa

Takashi Mizusaki

Yoshinori Ohta

Takashige Tamamushi

Hidetoshi Yamada

Masafumi Yamasaki

Kazuo Nakamura

Hideo Adachi

Takashi Tsukaya

Kenichi Oinoue

Toshimasa Akagi

Kouichi Karaki

Sohbe Suzuki

Jun Funazaki

Tomoji Ishii

Katsumi Terada

An optical waveguide apparatus comprising a substrate made of material the refractive index of which is changed by an electric effect, and an optical waveguide which is formed on a portion of the substrate and allows passage of guided light. In the apparatus, the optical waveguide includes an optical path changing section for periodically producing an electromotive force under the control of one of control light and guided light.

Optical waveguide apparatus for controlling a signal light traveling

A solid state image pick-up device having a number of static induction transistor image sensors arranged in a matrix form, each static induction image sensor includes a drain region formed by an n+ substrate connected to the earth potential, a channel region formed by an n.sup.- epitaxial layer grown on the substrate, a ring-shaped p+ gate region formed in a surface of the epitaxial layer, an n+ source region formed in a part of the surface of the epitaxial layer surrounded by the ring-shaped gate region and a p+ overflow drain region formed in the surface of the substrate underneath the gate region. By adjusting a time duration of a shutter control signal having a positive voltage applied to the overflow drain region, a time period during which photocarriers, i.e. electrons are flown into the gate region and stored therein, can be controlled at will, and an electronic shutter function can be achieved.

Solid state image pick-up device having a number of static induction

A solid state image pick-up device with a shutter function including a number of charge coupled devices of vertical overflow domain type is disclosed. A light receiving portion comprises a p.sup.- epitaxial layer arranged on a main surface of an n.sup.+ substrate and an n.sup.+ diffusion surface region is provided in a surface of the p.sup.- layer. A p.sup.+ control gate for controlling a potential barrier between the n.sup.+ diffusion surface region and the p.sup.- epitaxial layer is formed in the epitaxial layer adjacent to the light receiving portion, and a p well region is formed in the epitaxial layer adjacent to the light receiving portion. During a shutter close period, i.e. before a signal charge storing operation, a control voltage applied to the control gate and a reverse bias voltage applied across the n.sup.+ substrate and p.sup.- epitaxial layer are so adjusted that a potential barrier between the epitaxial layer and surface region is made sufficiently small to completely discharge all the charge stored in the light receiving portion into the substrate serving as the overflow drain.

Solid state image pick-up device with a shutter function

A solid state image sensor comprising static induction transistors each forming a picture element. Each static induction transistor in the solid state image sensor has a lateral structure in which the source and drain regions are formed by surface regions provided on the same side in an epitaxial layer forming the channel region and a signal charge storage gate region are formed by a buried gate region provided under the channel region and a surface gate region provided on the channel region, so that the source-drain current flows in parallel to the surface of epitaxial layer and is effectively controlled between the buried and surface gate regions.

Solid state image sensor

The invention relates to a purifier for purifying an industrial raw material gas, formed by depositing a hydrogenated or a fluorinated amorphous substance of an element selected from a group consisting of Si and Ge on a carrier such as a zeolite. The industrial raw material gas to be purified is brought into contact with the purifier, which is maintained at a predetermined temperature, to remove simultaneously a small amount of oxygen and water components from the industrial raw material gas.

Method for purifying an industrial raw material gas and a purifier for

A solid state image sensor including a substrate, an epitaxial layer grown on the substrate, an opaque bottom electrode applied on the epitaxial layer, a photoconductor film deposited on the bottom electrode, a transparent surface electrode applied on the photoconductor film, a reading-out SIT formed in the epitaxial layer and a resetting MOS-FET also formed in the epitaxial layer. A gate diffusion region of the reading-out SIT is connected to the bottom electrode and a source region of resetting MOS-FET is also connected to the bottom electrode. A source electrode connected to the source region of the reading-out SIT is extended under the bottom surface, while an insulating layer is interposed therebetween to form a capacitance. Charge carriers stored in the gate region of the reading-out SIT can be read-out to derive a large output voltage due to the amplifying function of the reading-out SIT.

Solid state image sensor comprising photoelectric converting film and

A purifier for purifying a raw material gas for use in manufacturing semiconductor devices is formed by a hydrogenated amorphous substance of an element selected from a group consisting of Si, Ge, P and As whose hydride gas is used as the raw material gas. This purifier is used for purifying the raw material gas to be purified in such a manner that the raw material gas is brought into contact with the purifier comprising the hydrogenated amorphous substance which is maintained at a temperature a little lower than the decomposition temperature of the raw material gas to efficiently remove the small amount of oxygen from the raw material gas.

Method for purifying raw material gas for use in semiconductor

In an endoscope for displaying an image of an object on a monitor screen, a static induction transistor (SIT) image sensor having a number of light receiving elements is arranged at a light emitting side of an image guide bundle. In order to eliminate dead spots appearing in the displayed image due to broken fibers in the image guide bundle, pixel signals of light receiving elements corresponding to the dead spots are formed by interpolation with the aid of pixel signals derived from light receiving elements adjacent to the relevant light receiving elements to be interpolated. As an interpolation function, for example, an average of the pixel signals derived from the adjacent light receiving elements is used. The addresses of the light receiving elements corresponding to the dead spots are stored previously in a PROM during a manufacturing stage. In this manner, the interpolated image of the object having an excellent image quality can be displayed on the monitor.

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Ina, Japan

Atsushi Yusa