Yokogawa Electric Corporation

Tanaka Kikinzoku Kogyo K.k.

Toshiba Materials Co., Ltd.

Shibaura Institute of Technology

Tama-tlo Corporation

Atsushi Yumoto

Takashi Yoshida

Makoto Noro

Yusaku Yoshida

Shigeto Iwai

Fujio Hiroki

Naotake Niwa

Tetsuo Inoue

Takashi Hino

Shuichi Saito

Yoshitaka Suzuki

Yuusaku Yoshida

Takahisa Yamamoto

Mari Shimizu

Shuhei Yoshita

Takashisa Yamamoto

Tatsuhiko Miyauchi

Ichiro Shiota

Toru Hirayama

Tomohiro Sugano

A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A≤B1≤1.2A, 0.8A≤B2≤1.2A, and 0.8A≤B3≤1.2A.

Component and apparatus of manufacturing semiconductor

A resonant pressure sensor includes a first substrate and a resonator. The first substrate includes a diaphragm and a projection disposed on the diaphragm. The resonator is disposed in the first substrate, a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate. The first substrate is an SOI substrate in which a silicon dioxide layer is inserted between a silicon substrate and a superficial silicon layer. The intermediate level of the first substrate is disposed in the silicon substrate, and the resonator is disposed in the projection included in the superficial silicon layer.

Resonant pressure sensor and manufacturing method therefor

A resonant pressure sensor with improved linearity includes: a substrate including a substrate-separated portion separated from a housing-fixed portion; a first resonator that: is disposed in the substrate-separated portion; and detects a change of a first resonance frequency based on a strain in the substrate caused by static pressure applied by a pressure-receiving fluid; a second resonator that: is disposed in the substrate; detects a change of a second resonance frequency based on the strain in the substrate; and has a pressure sensitivity of the second resonance frequency; and a processor that: measures the static pressure based on the detected change of the first resonance frequency; and corrects the static pressure according to internal temperature of the pressure sensor based on a difference between the second resonance frequency and the first resonance frequency.

Resonant pressure sensor with improved linearity

A resonant pressure sensor with improved linearity includes a substrate including a substrate-fixed portion fixed to a housing-fixed portion and a substrate-separated portion separated from the housing-fixed portion in a first direction; a first resonator disposed in the substrate-separated portion to detect a change of a resonance frequency based on a strain caused by static pressure applied by a pressure-receiving fluid interposed in a gap between the housing-fixed portion and the substrate; a first electrode extending along a second direction to output an excitation signal to the first resonator; a second electrode that extends along the second direction and from which the first resonator outputs a signal having the resonance frequency; and a processor that measures the static pressure based on the detected change.

Resonant pressure sensor with imporved linearity

An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

Aluminum nitride film, method of manufacturing aluminum nitride film, and high withstand voltage component

A resonant pressure sensor has high linearity and includes: a housing; and a pressure sensing unit that detects a static pressure based on a change value of a resonance frequency and includes: a housing-fixed portion; a substrate that includes a substrate-fixed portion and a substrate-separated portion; the pressure-receiving fluid that is interposed in a gap between the housing-fixed portion and the substrate and envelops the substrate; and a first resonator that is disposed in the substrate-separated portion and detects the change value of the resonance frequency based on a strain in the substrate caused by the static pressure applied by the pressure-receiving fluid, wherein the first resonator is made of a semiconductor material including an impurity, a concentration of the impurity is 1&#xd7;10(cm) or higher, and an atomic radius of the impurity is smaller than an atomic radius of the semiconductor material.

A resonant pressure sensor includes a first substrate including a diaphragm and at least one projection disposed on the diaphragm, and at least one resonator disposed in the first substrate, at least a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate.

A resonant transducer includes a resonant beam which is formed on a semiconductor substrate, a support beam of which one end is connected to a part of the resonant beam at a predetermined angle, a first electrode which is connected to the resonant beam via the support beam, a second electrode which is disposed adjacent to a center of one side surface of the resonant beam, and a conductor which is disposed between the support beam and the second electrode, the conductor being connected to the first electrode.

Resonant transducer

A sensor includes: a pressure vessel filled with an enclosed liquid; a diaphragm that seals the pressure vessel; a sensor body contained in the pressure vessel; an electric wire comprising a wiring electrically connected to the sensor body; a fixture that fixes the electric wire to the pressure vessel; a first fillet at a joining portion between the electric wire and the fixture, wherein the first fillet contacts the enclosed liquid; and a second fillet at a joining portion between the fixture and the pressure vessel, wherein the second fillet contacts the enclosed liquid.

Sensor

A resonant sensor includes a mover that is movable in a first direction, a supporter that extends in a second direction perpendicular to the first direction, the supporter being connected to the mover and a fixer, the supporter supporting the mover which is movable in the first direction, and a resonator that is vibratable, at least a part of the resonator being embedded in the supporter.

Resonant sensor

A physical vapor deposition apparatus and a physical vapor deposition method for forming a film of a substance which is hard to be made fine particles even when it is heated by plasma, arc discharge, or the like are provided. It has an evaporation chamberprovided inside it with an evaporation source materialand a heating partfor heating the evaporation source material, a powder supply sourceprovided inside it with a powder, and a film forming chamber, wherein the evaporation source materialis heated by the heating partto produce fine particles (nanoparticles), the fine particles and powder are sprayed out of a supersonic nozzle, are placed on a supersonic gas stream, and are deposited on a substrate for film formationby physical vapor deposition.

Physical vapor deposition apparatus and physical vapor deposition method

A physical vapor deposition system for making microparticles generated by using a non-transfer type plasma torch not generating an outgas even in an ultra-high vacuum environment accelerate by a supersonic gas flow and depositing microparticles on a substrate to form a coating film is provided. Provision is made of an evaporation chamber () having a plasma torch () and an evaporation source () inside it and a film formation chamberhaving a supersonic nozzleand a substrate for film formation. Each plasma torch has a substantially cylindrical electrically conductive anode, a polymer-based or non-polymer-based insulation pipeinserted to the inner side of that and generating less outgas than a phenol resin, and a rod shaped cathodeinserted to the inner side of an insulation pipe. Microparticles are generated from an evaporation source () by a plasma obtained by applying voltages to the anodeand the cathode, ejected from a supersonic nozzle, made to ride on a supersonic gas flow, and deposited by physical vapor deposition onto a substrate for film formation

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Tokyo, Japan

Atsushi Yumoto