Tokyo Electron Limited

Atsushi Yamashita

Kimio Motoda

Douglas M Trickett

Takashi Terada

Takayuki Ishii

Koji Kagawa

Shigeto Tsuruta

A substrate processing method includes: a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape; after the preparing process, a mask removing process of removing the zirconium oxide film by supplying a mask removing liquid containing sulfuric acid as a main component to the substrate; and after the mask removing process, a drying process of drying a surface of the substrate that is wet with a rinsing liquid.

Substrate processing method and substrate processing apparatus

A coating apparatus includes a nozzle, a moving mechanism, a pressure adjusting unit and a pressure control unit. The nozzle is provided with a storage chamber and a slit-like flow path, and configured to discharge the coating liquid from a discharge port formed at a front end of the flow path. The moving mechanism moves the nozzle and a substrate relatively to each other along the surface of the substrate. The pressure adjusting unit adjusts the pressure inside the storage chamber. The pressure control unit controls the pressure adjusting unit so as to adjust pressure inside the storage chamber. The pressure control unit controls the pressure adjusting unit such that the inside of the storage chamber becomes a negative pressure, and fills the coating liquid inside the storage chamber while slowly decreasing the negative pressure inside the storage chamber.

Coating apparatus and method for filling coating liquid

A method is provided for thinning a wafer, for example a wafer containing Through Silicon Vias (TSV). The method includes providing a bonding wafer coupled to a handling wafer, and performing a wafer edge trimming process that forms a trimmed bonding wafer, where the wafer edge trimming process removes an edge portion of the bonding wafer and exposes an upper surface of the handling wafer. The method further includes forming a protective mask on the trimmed bonding wafer and on the exposed upper surface of the handling wafer, planarizing the protective mask and the trimmed bonding wafer, and selectively removing the planarized protective mask by an etching process. In one embodiment, the removing includes performing a first wet etching process that selectively removes a portion of the planarized trimmed bonding wafer relative to the planarized protective mask, and performing a second wet etching process that selectively removes the planarized protective mask.

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Kumamoto, Japan

Atsushi Yamashita