Adeka Corporation

Komatsu Corporation

The University of Tokyo

Samsung Electronics Co., Ltd.

Nec Corporation

Honda Motor Co., Ltd.

Mitsubishi Heavy Industries Limited

Nippon Steel & Sumikin Engineering Co., Ltd.

Atsushi Yamashita

Akihiro Nishida

Masako Hatase

Nana Okada

Keisuke Takeda

Hajime Asama

Yoshiki Ooe

Atsushi Sakurai

Masaki Enzu

Hiromitsu Fujii

Kazuki Harano

Soyoung Lee

Hyunwoo Kim

Akio Saito

Yasuhiro Yoshida

Tomoharu Yoshino

Kazuki Kure

Younjoung Cho

Soichiro Iwataki

Toru Tatsumi

Seung-min Ryu

Younsoo Kim

Takuya Yoshida

Ryota Fukushima

Chiaki Mitsui

Kiyoshi Murata

Gyu-Hee Park

Takashi Noda

Takashi Tsukamoto

Jaesoon Lim

Yuya Tokuda

Haruyoshi Sato

Takanori Koide

Wei Sun

Seungmin Ryu

Gyuhee Park

Yuushi Oshikawa

Keita Yoshiara

Takeshi Okada

Takashi Ikekita

Kenya Nishimura

Alessandro Moro

Yoshimichi Oguri

Tadashi Torii

Masataka Fuchida

Chikara Iwamoto

Hiroshi Ookubo

Kohichi Fujiwara

Provided is a thin-film forming raw material, including an alkoxide compound represented by the following general formula (1): where Rto Reach independently represent an alkyl group having 1 to 5 carbon atoms, M represents a rare earth metal atom, and 'n' represents a valence of the rare earth metal atom.

Thin-film forming raw material, thin-film and method of producing thin-film

Provided is a tin compound, which is represented by the following general formula (1):

Tin compound, thin-film forming raw material, thin-film, method for producing thin-film, and halogen compound

The present invention provides a tin compound represented by the following general formula (1) (in the formula (1), Rto Reach independently represent a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, and Rrepresents an alkanediyl group having 1 to 15 carbon atoms), a thin-film forming raw material including the compound, a thin-film formed by using the thin-film forming raw material, a method of using the compound as a precursor for producing the thin-film, and a method of producing a thin-film including: introducing a raw material gas obtained by vaporizing the thin-film forming raw material into a treatment atmosphere having a substrate set therein; and subjecting the tin compound in the raw material gas to decomposition and/or a chemical reaction in the treatment atmosphere, to thereby produce a thin-film containing a tin atom on a surface of the substrate.

Tin compound, thin-film forming raw material containing said compound, thin film formed from said thin-film forming raw material, method of producing said thin film using said compound as precursor, and method of producing said thin film

An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):

Yttrium compound and method of manufacturing integrated circuit device by using the same

Provided is a cobalt compound represented by the following general formula (1): where Rto Reach independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, a group represented by the following general formula (L-1), or a group represented by the following general formula (L-2); where Rto Reach independently represent an alkyl group having 1 to 5 carbon atoms, Aand Aeach independently represent an alkanediyl group having 1 to 5 carbon atoms, and * represents a bonding site.

Cobalt compound, thin-film forming raw material, thin-film, and method of producing thin-film

Provided is a method of producing a copper-containing layer, including: step 1: a step of reducing a surface of a substrate, provided that a substrate having a surface formed of a silicic acid compound is excluded, through use of a reducing agent; and step 2: a step of forming a copper-containing layer on the surface having been reduced in the step 1 through use of a thin-film forming raw material containing a copper compound by a plasma atomic layer deposition method.

Method of producing copper-containing layer

The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material: where Rand Reach independently represent an alkyl group having 1 to 5 carbon atoms, Rrepresents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and 'n' represents the valence of the atom represented by M, provided that at least one hydrogen atom of Rto Ris substituted with a fluorine atom.

Amidinate compound, dimer compound thereof, thin-film forming raw material, and method of producing thin film

Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), Rto Reach independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and 'n' represents a valence of the metal atom represented by M, provided that at least one of R, R, and Rrepresents the group containing a fluorine atom.

Compound, thin-film forming raw material that contains said compound, and method of manufacturing thin film

A cold flake suppression method is provided. A molding device includes a sleeve, a tip, a sprue guide portion, a molding die, a sprue ring, a distributer, and a control device. The sprue guide portion includes a stamp portion, a runner portion, and a gate portion. The control device drives a supply device to slide the tip for molten metal to flow through the sleeve; sequentially calculates an amount of heat transfer changing continuously from the start of supply of molten metal until the tip slides to the position in FIG., and calculates a total of the amounts as a total amount of heat transfer; and calculates a volume of the sprue guide portion based on information about the sprue guide portion input by an operator. Shapes of the sleeve and the sprue guide portion are determined to set a cold flake index equal to or less than 0.842.

Cold flake suppression method

Staying of a drain on a cylinder attached to a lower side of a valve casing is suppressed, and occurrence of corrosion of the cylinder is suppressed. A steam valve includes a valve casing, a valve disc disposed within the valve casing, a cylinder disposed on a lower side of the valve casing and having a piston rod extending upward, a valve stem vertically penetrating a lower portion of the valve casing and having one end coupled to the piston rod via a coupling and having another end coupled to the valve disc, a cover having a larger diameter than the piston rod and the coupling and configured to separate the piston rod and the coupling from each other by being interposed between the piston rod and the coupling, and a tubular skirt hanging down from a peripheral portion of the cover and surrounding a periphery of a head portion of the piston rod.

Steam valve

Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where Rrepresents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, Rand Reach independently represent an alkyl group having 1 to 5 carbon atoms, and zrepresents an integer of from 1 to 3.

Raw material for forming thin film by atomic layer deposition method, method of producing thin film, and alkoxide compound

A raw material for forming a thin film, comprising a compound represented by General Formula (1) below.  wherein Rrepresents an isopropyl group, Rrepresents a methyl group, Rand Reach independently represent a linear or branched alkyl group havingtocarbon atoms, A represents a propane--diyl group and M represents copper, nickel, cobalt or manganese.

Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound

The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where Rto Reach independently represent an alkyl group having 1 to 5 carbon atoms, and Arepresents an alkanediyl group having 1 to 5 carbon atoms.

Thin-film forming raw material for use in atomic layer deposition method, thin-film forming raw material, method for producing thin-film, and compound

Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1. 

Metal compounds and methods of fabricating semiconductor devices using the same

The camera captures an image of a surrounding environment of a work vehicle and outputs image data indicative of the image. The shape sensor measures a three-dimensional shape of the surrounding environment and outputs 3D shape data indicative of the three-dimensional shape. A controller acquires the image data and the 3D shape data. The controller generates a three-dimensional projection model based on the 3D shape data. The three-dimensional projection model portrays the three-dimensional shape of the surrounding environment. The image is projected onto the three-dimensional projection model based on the image data, thereby generating display image data that represents a display image of the surrounding environment of the work vehicle.

Display system for work vehicle and generation method

Growing community of inventors

Tokyo, Japan

Atsushi Yamashita