Nichia Corporation

Dai Nippon Printing Co., Ltd.

Atsushi Yamamoto

Takeshi Morikawa

Keiko Ono

Kenji Kawano

Takeshi Tamura

Saiki Yamamoto

Seitaro Akagawa

Tomokazu Maruyama

Seiji Tawaraya

Shinya Kondo

Kazuyuki Hino

Masami Nishi

Tomokazu Yoshida

Koji Kajikawa

Hiroto Itoi

A light source device includes a substrate, a plurality of light sources arranged on the substrate, a light transmissive member arranged over the light sources, and a light-reflecting pattern. The light-reflecting pattern is arranged above or below the light transmissive member such that a thickness and/or a concentration of material of the light-reflecting pattern in a first region directly above one of the light sources is greater than the thickness and/or the concentration of material of the light-reflecting pattern in a second region above a portion between adjacent ones of the light sources.

Light source device

A light emitting device includes a light emitting element adapted to emit blue light, quantum dots that absorb part of the blue light emitted from the light emitting element to emit green light, and at least one of a KSF phosphor adapted to absorb part of the blue light emitted from the light emitting element to emit red light and a MGF phosphor adapted to absorb part of the blue light emitted from the light emitting element to emit red light.

Light emitting device

A light-emitting device includes: a light-emitting element having an upper surface, and including a plurality of semiconductor light-emitting structures; and a substrate supporting the light-emitting element. The semiconductor light-emitting structures include a first semiconductor light-emitting structure and a second semiconductor light-emitting structure. The substrate includes: an interconnection layer including: a first interconnection portion comprising a first land, a second interconnection portion comprising a second land and a third land, and a third interconnection portion comprising a fourth land, and a first reflective member covering a portion of the interconnection layer and having an opening. The light-emitting element is located inside the opening of the first reflective member as viewed from above. A portion of the first land, a portion of the second land, a portion of the third land, and a portion of the fourth land are exposed in the opening of the first reflective member.

Light-emitting device

The light-emitting device includes a first light-emitting element having an emission peak wavelength of 430 nm or more and less than 490 nm, a second light-emitting element having an emission peak wavelength of 490 nm or more and 570 nm or less, a support body at which the first light-emitting element and the second light-emitting element are disposed, and a light-transmissive member containing a red phosphor and covering the first light-emitting element and the second light-emitting element. A content density of the red phosphor in the light-transmissive member in a space between the first and second light-emitting elements is higher in a part below an upper surface of the second light-emitting element than in a part above the upper surface thereof.

Light-emitting device and backlight including light-emitting device

A light-emitting device has a light-emitting element including first and a second semiconductor light-emitting structures, each having a first and a second electrode, and a substrate supporting the light-emitting element. The substrate has an interconnection layer having a first interconnection portion comprising a first land, a second interconnection portion comprising second and third lands, and a third interconnection portion comprising a fourth land, and a first reflective member covering a portion of the interconnection layer. A portion of the first land is coupled to the first electrode of the first semiconductor light-emitting structure. A portion of the second land and a portion of the third land are coupled to the second electrode of the first semiconductor light-emitting structure and the first electrode of the second semiconductor light-emitting structure, respectively. A portion of the fourth land is coupled to the second electrode of the second semiconductor light-emitting structure.

A light emitting device includes a mounting board, light sources, a light diffuser, a wavelength conversion layer, and scatter reflection portions. Each of the light sources has an upper face on which a light reflecting layer is disposed. The light diffuser is arranged above the plurality of light sources. The wavelength conversion layer is located at least between the light sources and the light diffuser. The wavelength conversion layer is configured to absorb at least a portion of light from the light sources and to emit light having a wavelength which is different from a wavelength of the light from the light sources. The scatter reflection portions are arranged on a surface of the wavelength conversion layer that is closer to the light diffuser. Each of the scatter reflection portions is arranged above at least a portion of the upper face of a corresponding one of the light sources.

A method of manufacturing a light source device includes: providing a substrate having a plurality of light sources disposed thereon; causing the plurality of light sources to emit light; measuring a first light-intensity distribution of an entire surface that is in parallel to the substrate and located above the plurality of light sources; and based on a measured value of the first light-intensity distribution, forming a light-reflecting pattern above the plurality of light sources to obtain a second light-intensity distribution that is different from the first light-intensity distribution.

Method of manufacturing light source device

A device includes a light emitting device including: a light emitting element adapted to emit a blue light, a sealing resin covering the light emitting element, and a sulfide phosphor-containing layer disposed separate from the sealing resin; and a diffusion plate disposed between the sealing resin and the sulfide phosphor-containing layer, the diffusion plate being spaced apart from the sealing resin.

A light emitting device includes a light emitting element adapted to emit a blue light, a sealing resin covering the light emitting element, and a sulfide phosphor-containing layer disposed at an outer side of a sealing resin. The sealing resin contains at least one of a KSF phosphor adapted to absorb a portion of the blue light emitted from the light emitting element to emit red light and a MGF phosphor adapted to absorb a portion of the blue light emitted from the light emitting element to emit red light. The sulfide phosphor-containing layer includes a sulfide phosphor adapted to absorb a portion of the blue light emitted from the light emitting element to emit red light and a MGF phosphor adapted to absorb a portion of the blue light emitted from the light emitting element to emit green light.

An image display module includes a light emitting device including a nitride semiconductor light-emitting element, as a light source, having an emission peak wavelength in a wavelength range of 240 nm to 560 nm, an Mn-activated red fluorescent material having a maximum excitation wavelength in the wavelength range, an emission peak wavelength of 610 nm to 670 nm, and a half bandwidth of the emission spectrum of 30 nm or less, and a green fluorescent material having an emission peak wavelength in a wavelength range of 510 nm to 550 nm; and a color filter having a blue pixel wherein the difference between the maximum and the minimum value of transmittance at a wavelength range of 420 nm to 460 nm of the spectral transmittance curve is 4% or less.

Growing community of inventors

Komatsushima, Japan

Atsushi Yamamoto