Sanyo Electric Co., Ltd.

Panasonic Corporation

Rohm Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Sanyo Optec Design Co., Ltd.

Sumitomo Electric Industries, Limited

Other

Kyoto University

Hitachi Maxell, Limited

Matshushita Electric Industrial Co., Ltd.

Sanyo Electric., Ltd.

Ntt Docomo, Inc.

Atsushi Yamaguchi

Hidenori Miyakawa

Satoshi Sumi

Kenji Tanase

Naoyuki Takagi

Kenichiro Suetsugu

Koso Matsuno

Yoshiaki Maeno

Yoshihisa Suzuki

Naomichi Ohashi

Kei Kikuiri

Shigeaki Sakatani

Arata Kishi

Masato Hirano

Kenichiro Mitani

Norikazu Ito

Ken Nakahara

Tetsuo Fukushima

Shinya Takado

Takayuki Higuchi

Ryo Kuwabara

Masatoshi Majima

Yoshihiro Hori

Kenji Nakao

Masato Yamada

Hisashi Matsuyama

Yoshiharu Uchihara

Hitoshi Noguchi

Yoshinori Sakai

Yasuo Fukuhara

Hiroe Kowada

Kazuhiro Nishikawa

Norio Ohta

Naho Mizuhara

Chihiro Hiraiwa

Hiroyuki Awano

Akio Furusawa

Hiroshi Shirai

Junichi Kashiwagi

Hiroki Ishida

Yohei Moriyama

Hideyuki Tsujimura

Hitoshi Watanabe

Shuichi Ichiura

Takukazu Otsuka

Hiroyuki Sakairi

Kenji Torazawa

Shunji Hibino

Tetsuya Uda

Koki Sakamoto

Seiji Murata

Mikiya Ueda

Koji Nitta

Shinji Inazawa

Shoichiro Sakai

Katsusuke Shimazaki

Masahiro Ono

Mikiya Nakata

Yoichi Tsuchiya

Atsushi Fukunaga

Masafumi Yoshihiro

Morio Nakatani

Masayuki Sonobe

Kunio Hibino

Kazuto Nishida

Tsuyoshi Tsutsui

Kentaro Chikamatsu

Mitsuhiko Sakai

Yusuke Nakakohara

Nobuaki Matsui

Kimiaki Nakaya

Yohei Noda

Hirohisa Hino

Nobuo Iwatsuki

Taro Fukui

Hisahiko Yoshida

Yuta Okawauchi

Kazumi Matsushige

Shinji Kobayashi

Seiji Tokii

Toshiyuki Nohira

Takashi Hikihara

Mitsutaka Yamaguchi

Rika Hagiwara

Donglin Han

Hiroyuki Mutou

Shinichi Tamai

Masato Udaka

Kazuhiko Matsumoto

Jin Jin

Yoichiro Goto

Hirokatsu Umegami

Kousou Matsuno

Kumiko Sugiyama

Akiko Kuramitsu

Takashi Ikari

Kohei Nagaoka

Toshihisa Horiuchi

Nobuyuki Nagai

Satoru Oonuki

Semiconductor device Aincludes: first terminalA and second terminalB; first switching elementA including first gate electrodeA, first source electrodeA and first drain electrodeA; and second switching elementB including second gate electrodeB, second source electrodeB and second drain electrodeB. First switching elementA and second switching elementB are connected in series to each other between first terminalA and second terminalB. Semiconductor device Aincludes first capacitorA connected in parallel to first switching elementA and second switching elementB between first terminalA and second terminalB. First switching elementA and second switching elementB are aligned in y direction. First capacitorA overlaps with at least one of first switching elementA and second switching elementB as viewed in z direction. These arrangements serve to suppress surge voltage.

Semiconductor device

Semiconductor laser device Aincludes semiconductor laser element, switching elementhaving gate electrode, source electrodeand drain electrode, and support memberhaving conductive partthat forms a conduction path to switching elementand semiconductor laser elementand supports semiconductor laser elementand switching element. Conductive parthas front surface first sectionspaced apart from semiconductor laser element. Semiconductor laser device Aincludes at least one first wireconnected to source electrodeof switching elementand semiconductor laser elementand also at least one second wireconnected to source electrodeof switching elementand front surface first sectionof conductive part. Such an arrangement reduces the inductance component of semiconductor laser device A

Semiconductor laser device

An electronic-part-reinforcing thermosetting resin composition has: a viscosity of 5 Pa&#xb7;s or less at 140&#xb0; C.; a temperature of 150&#xb0; C. to 170&#xb0; C. as a temperature corresponding to a maximum peak of an exothermic curve representing a curing reaction; and a difference of 20&#xb0; C. or less between the temperature corresponding to the maximum peak and a temperature corresponding to one half of the height of the maximum peak in a temperature rising range of the exothermic curve.

Electronic-part-reinforcing thermosetting resin composition, semiconductor device, and method for fabricating the semiconductor device

A semiconductor rectifier includes a transistor and a diode. The transistor includes a source electrode, a drain electrode and a gate electrode. The diode includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the gate electrode, and the cathode electrode is electrically connected to the source electrode.

Semiconductor rectifier

A ripple injection circuit equipped with: a capacitor that passes a frequency component of an input voltage or a frequency component of an output voltage and that generates a first ripple voltage having a first ripple component; and an integration circuit that integrates a comparison result signal and that generates a second ripple voltage having a second ripple component. The first ripple component and the second ripple component are added to a feedback voltage.

Ripple injection circuit and electronic device equipped with this circuit

According to a first aspect of the present disclosure, a semiconductor device is provided. The semiconductor device includes a first transistor, a second transistor, at least one source terminal, at least one gate terminal, at least one drain terminal, a source wire, a gate wire, a drain wire and a support part. The support part includes two first support-part edges and two second support-part edges. Each of the two first support-part edges is parallel to a first direction, and the two first support-part edges are spaced apart from each other in a second direction that is perpendicular to the first direction. Each of the two second support-part edges is physically connected to the two first support-part edges. The source wire, the gate wire and the drain wire cross at least one of the two second support-part edges in plan view.

Semiconductor device with first and second transistors and support part

Provided is a paste thermosetting resin composition containing solder powder, a thermosetting resin binder, an activator, and a thixotropy imparting agent. The solder powder has a melting point ranging from 100&#xb0; C. to 240&#xb0; C., inclusive. The thermosetting resin binder contains a main agent and a curing agent. The main agent contains a di- or higher functional oxetane compound.

Paste thermosetting resin composition, semiconductor component, semiconductor mounted article, method for manufacturing semiconductor component, and method for manufacturing semiconductor mounted article

An object is to provide a solid electrolyte laminate that allows a large amount of gas to be supplied to a fuel electrode while having improved strength and a method for manufacturing such a solid electrolyte laminate. A solid electrolyte laminateincludes a solid electrolyte layer, a first electrode layerdisposed on one side of the solid electrolyte layer, and a second electrode layerdisposed on another side of the solid electrolyte layer. At least the first electrode layer, which forms a fuel electrode, includes a bonding layerbonded to the solid electrolyte layer and a porous layerhaving continuous pores and integrally formed on the bonding layer.

Solid electrolyte laminate, method for manufacturing solid electrolyte laminate, and fuel cell

A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability. On a substrate, a buffer layer including an AlN layer, a first AlGaN layer and a second AlGaN layer is formed. On the buffer layer, an element action layer including a GaN electron transfer layer and an AlGaN electron supply layer is formed. Thus, an HEMT element is constituted.

Nitride semiconductor element and nitride semiconductor package

Provided is a solid electrolyte laminate comprising a solid electrolyte layer having proton conductivity and a cathode electrode layer laminated on one side of the solid electrolyte layer and made of lanthanum strontium cobalt oxide (LSC). Also provided is a method for manufacturing the solid electrolyte. This solid electrolyte laminate can further comprise an anode electrode layer made of nickel-yttrium doped barium zirconate (Ni&#x2014;BZY). This solid electrolyte laminate is suitable for a fuel cell operating in an intermediate temperature range less than or equal to 600&#xb0; C.

The gate drive circuit includes: a gate resistance Rconnected to a gate Gof a switching device Q; and a gated diode Dconnected in parallel to the gate resistance R, wherein a relationship of V(Di)&#x3c;V(Tr) is satisfied, where V(Di) is a forward threshold voltage of the gated diode D, and V(Tr) is a threshold voltage of the switching device Q. There is provided: a gate drive circuit having high speed switching performance in which a misoperation is suppressed and surge voltage is reduced; and a power supply mounted with such a gate drive circuit.

Gate drive circuit and power supply capable of reducing surge voltage

A semiconductor component includes a semiconductor package having a mountable face, a bump, and a coating part. The bump is made of first solder and is formed on the mountable face. The coating part formed of a first composition containing solder powder made of second solder, a flux component, and a first thermosetting resin binder coats the top end of the bump.

Semiconductor component, semiconductor-mounted product including the component, and method of producing the product

Provided is a solid electrolyte made of yttrium-doped barium zirconate having hydrogen ion conductivity, a doped amount of yttrium being 15 mol % to 20 mol %, and a rate of increase in lattice constant at 100&#xb0; C. to 1000&#xb0; C. with respect to temperature changes being substantially constant. Also provided is a method for manufacturing the solid electrolyte. This solid electrolyte can be formed as a thin film, and a solid electrolyte laminate can be obtained by laminating electrode layers on this solid electrolyte. This solid electrolyte can be applied to an intermediate temperature operating fuel cell.

Solid electrolyte, method for manufacturing solid electrolyte, solid electrolyte laminate, method for manufacturing solid electrolyte laminate, and fuel cell

Growing community of inventors

Osaka, Japan

Atsushi Yamaguchi