Anritsu Corporation

Atsushi Yamada

Hiroshi Mori

Yasuaki Nagashima

Tomoyuki Kikugawa

Yoshiharu Shimose

Shigenori Mattori

Takashi Nakayama

Takahiro Samejima

The present invention provides a semiconductor light emitting element that can obtain oscillation at desired wavelengths. The semiconductor light emitting element comprises a semiconductor substrate, an active layerfor emitting and propagating light, which is formed in a stripe shape above the semiconductor substrate, buried layersformed on both lateral sides of the active layer, a cladding layerformed above the active layerand the buried layers, a first electrodeformed above the cladding layer, and a second electrodeformed below the semiconductor substrate. The active layeropens on one end facetamong the two end facets formed by cleavage so that the active layermakes a predetermined angle to the normal direction of the one end facet. A partially heating meansfor heating a predetermined length portion of the active layeralong the direction of light propagation is formed on a first electrode at a position thermally isolated from the one end facet

Semiconductor light emitting element and tunable wavelength laser light source

The present invention provides a semiconductor optical element applicable to an EC-LD or an SLD, and an external cavity laser having the semiconductor optical element. The semiconductor optical element has a pair of cleavage surfaces, and comprises a semiconductor substratehaving a base surface and a planer structure provided on the base surface and provided with a waveguideG having an active layer. The waveguideG has an end surface with low reflectivity and another end surface with certain reflectivity. The waveguideG includes an end portion having a first optical axis in the vicinity of the first end surfaceTand an end portion having a second optical axis in the vicinity of the second end surfaceT, the first optical axis being inclined at a first angle &#x3a6;other than zero degree with respect to a normal to the first end surfaceT, the second optical axis being inclined at a second angle &#x3a6;other than zero degree with respect to a normal to the second end surfaceT, the first angle &#x3a6;being different from the second angle &#x3a6;. The end portion of the waveguideG is different in width from the other end portion of the waveguideG.

Semiconductor optical element for external cavity laser

A semiconductor laser includes a substrate made of InP, an active layer including a multiquantum well structure, which is formed in a width of 7 to 14 &#x3bc;m on the substrate, and an n-type cladding layer made of InGaAsP and a p-type cladding layer made of InP, which are formed on the substrate with the active layer interposed therebetween. The semiconductor laser oscillates only in the fundamental lateral mode, and light emitted from an exit facet can be optically coupled with an external single mode optical fiber.

Semiconductor laser capable of coupling with single mode optical fiber at high coupling efficiency

The semiconductor light emitting device includes a semiconductor substrate formed from InP, an active layer, an n-type cladding layer formed from InGaAsP, and a p-type cladding layer formed from InP. The active layer is formed at the upper side of the semiconductor substrate. The n-type cladding layer and the p-type cladding layer are formed so as to hold the active layer therebetween. The semiconductor light emitting device is, given that, a refractive index of the n-type cladding layer is na, and a refractive index of the p-type cladding layer is nb, set so as to be the relationship of na&#x3e;nb in which the refractive index na of the n-type cladding layer is higher than the refractive index nb of the p-type cladding layer, and due to the distribution of light generated by the active layer being deflected to the n-type cladding layer side, optical loss by intervalence band light absorption at the p-type cladding layer is suppressed, and high-power light output can be obtained.

Semiconductor light emitting device in which high-power light output can be obtained with a simple structure including InGaAsP active layer not less than 3.5 microns and InGaAsP and InP cladding

A tunable laser source apparatus including an external cavity has a semiconductor laser and a wavelength selector. The semiconductor laser includes a reflection surface, a surface with an anti-reflection film and an active layer. The selector selects from laser light emitted from the laser through the surface with the anti-reflection film and feeding laser light of a desired wavelength back to the laser through the surface with the anti-reflection film. The semiconductor laser has a window region formed between a tip portion of the active layer extending toward the surface with the anti-reflection film and the surface with the anti-reflection film, the window region allowing the laser light of the desired wavelength fed back from the selector to be coupling thereon, while dilating the beam size of a portion of the laser light which is reflected from the surface with the anti-reflection film and reach the tip portion film.

Growing community of inventors

Atsugi, Japan

Atsushi Yamada