Panasonic Corporation

Sharp Kabushiki Kaisha Corporation

Panasonic Intellectual Property Management Co., Ltd.

Kyocera Document Solutions Inc.

Matsushita Electric Industrial Co., Ltd.

Other

Milbon Co., Ltd.

Atsushi Yamada

Toshiya Yokogawa

Mitsuaki Oya

Akira Inoue

Ryou Kato

Akihiro Isozaki

Yoshiaki Hasegawa

Masaki Fujikane

Tadashi Yano

Eiji Suematsu

Yoshihisa Amano

Kazushi Shintani

Yoshiaki Matsuda

Junichi Hibino

Akihiko Ishibashi

Hiroki Tanaka

Gaku Sugahara

Toshiaki Matsui

Hideki Ohmae

Keisuke Sato

Junko Iwanaga

Shinichi Handa

Songbaek Choe

Keisuke Satoh

Noriko Kakimoto

Naoki Sakota

Yohei Matsumoto

Yoshinori Motouchi

Naoto Matsumoto

Koki Kitaoka

A back-and-forth displacement detecting device includes: a sensor that detects an amount of displacement of an information processing device and outputs a detection signal indicating the amount of displacement; and a determination section that determines that, if the amount of displacement indicated by the detection signal exceeds a positive threshold value in one of a former period and a latter period which are time periods of predetermined length before and after a point in time when the detection signal indicates an amount of displacement of zero, the amount of displacement indicated by the detection signal in the other period falls below a negative threshold value, and a sum of the amounts of displacement over both the former and latter periods falls within a predetermined range, the information processing device has performed a displacement of back-and-forth movement from an initial state and has returned to the initial state.

Back-and-forth displacement detecting device and information processing device

An information processing device includes a display unit, a movement detection unit, and a control section. The display unit has two display screens of a first screen and a second screen, the second screen being an opposite side of the first screen. The movement detection unit detects a first movement state of the information processing device moving in a direction that the first screen faces and a second movement state of the information processing device moving in a direction that the second screen faces. When the movement detection unit detects the first movement state, the control section allows the first screen to display first content and allows the second screen to display second content. When the movement detection unit detects the second movement state, the control section allows the second display screen to display the first content and allows the first screen to display the second content.

Information processing device

An information extraction device includes a storage unit, an image reading device and a control unit. Based on the color of a colored region in a reference original document (reference image data), the control unit classifies the colored region into a first colored region and a second colored region. The storage unit stores feature image data including the first colored region and position data indicating a distance and a direction from the feature image data to the second colored region. The control unit determines an extraction region based on the position of a region matching with the feature image data in comparative image data and the position data. The control unit stores, in the storage unit, extraction information extracted from the extraction region.

Information extraction device, image forming apparatus including information extraction device and method of controlling information extraction device

To ensure that guest abnormal behavior can be easily found by visual inspection. A security system includes a staff electronic name tag device (SENTD), a guest electronic name tag device (GENTD), a monitoring device, a guest management device, and a gate device. The SENTD displays the face image of the staff who is assigned with the SENTD. The GENTD includes a display unit and a first wireless communication unit. The display unit displays the face image of the guest to which the GENTD is assigned. The photographing unit photographs the face image of the guest in the facility and outside the monitoring area. The second wireless communication unit wirelessly communicates with the first wireless communication unit of the guest electronic tag unit. The holder registration unit transmits the photographed face image of the guest to the GENTD in the second wireless communication unit for display.

Security system

A hair treatment agent in which penetrability of a modified peptide into the internal structure of the hair can be enhanced even under the conditions of acidic pH, and a method for causing a modified peptide to penetrate into the hair, are provided. Disclosed is a hair treatment agent at a pH of from 3.5 to 5.5, the hair treatment agent including: (A) a modified peptide having one kind or two or more kinds of side chain groups selected from a side chain having a structure represented by the following Formula (I), a side chain group having a salt of a structure represented by the following Formula (I), a side chain group having a structure represented by the following Formula (II), a side chain group having a salt of a structure represented by the following Formula (II), a side chain group having a structure represented by the following Formula (III), and a side chain group having a salt of a structure represented by the following Formula (III); and (B) an anionic surfactant:&#x2014;S&#x2014;S&#x2014;(CH)&#x2014;COOH&#x2003;&#x2003;(I)(wherein in Formula (I), n represents 1 or 2)&#x2014;S&#x2014;S&#x2014;CH(CH)&#x2014;COOH&#x2003;&#x2003;(II)&#x2014;S&#x2014;S&#x2014;CH(COOH)&#x2014;CH&#x2014;COOH&#x2003;&#x2003;(III).

Hair treatment agent and method for causing modified peptide to penetrate into hair

In a nitride semiconductor light-emitting diode having a shape of an isosceles triangle in a top view, either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied:20 degrees&#x2266;Angle degree &#x3b1;&#x2266;40 degrees (Ia) and 0 degrees&#x2266;Angle degree &#x3b8;&#x2266;40 degrees (IIa)&#x2003;&#x2003;Group Aa:90 degrees&#x2266;Angle degree &#x3b1;&#x2266;130 degrees (Ib) and 50 degrees&#x2266;Angle degree &#x3b8;&#x2266;90 degrees (IIb).&#x2003;&#x2003;Group Ab:

Nitride semiconductor light-emitting diode

A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer regionwhich includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrodewhich is electrically connected to the n-type nitride semiconductor layer; a p-type electrodewhich is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structurewhich is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.

Semiconductor light emitting element

In a nitride semiconductor light-emitting diode having a shape of an isosceles triangle in a top view, either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied: Group Aa: 20 degrees&#x2266;Angle degree &#x3b1;&#x2266;40 degrees (Ia) and 0 degrees&#x2266;Angle degree &#x3b8;&#x2266;40 degrees (IIa) Group Ab: 90 degrees&#x2266;Angle degree &#x3b1;&#x2266;130 degrees (Ib) and 50 degrees&#x2266;Angle degree &#x3b8;&#x2266;90 degrees (IIb).

A light emitting device in which a plurality of LED chips are arranged. Each of the plurality of LED chips include a light emitting region that is formed on a substrate, a first pad electrode that is formed on the substrate, and a through-hole that penetrates the substrate. First wiring that passes through the through-hole of one LED chip and the through-hole of an adjacent LED chip, and electrically connects the first pad electrode of the one LED chip and the first pad electrode of the adjacent LED chip is provided. The tip-end parts of the first wiring that have passed through the through-holes have, at a cross section cut at a plane that is parallel with a principal surface of the substrate, a larger cross-sectional area than the cross-sectional area of the first wiring inside the through-holes.

Light emitting device, display device, and manufacturing method for light emitting device

An antenna element-waveguide converter includes an antenna substrate having, on one surface, an antenna element and rectangular metal plates arranged in a plurality of rows to surround this antenna element, and a waveguide having, at one end, an opening opposed to the one surface of the antenna substrate. Surfaces of the rectangular metal plates and the opening of the waveguide are arranged with a predetermined gap left therebetween in a direction perpendicular to the one surface of the antenna substrate. Thus arranging the antenna substrate and the waveguide avoids a stress due to assembly variations, which can achieve favorable antenna characteristics.

Antenna element-waveguide converter and radio communication device using the same

A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structurewhich includes a p-type semiconductor region with a surfacebeing inclined from the m-plane by an angle of not less than 1&#xb0; and not more than 5&#xb0;; and an electrodeprovided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlInGaN (where x+y+z=1, x&#x2267;0, y&#x2267;0, and z&#x2267;0) layer. The electrodeincludes a Mg layerand an Ag layerprovided on the Mg layer. The Mg layeris in contact with the surfaceof the p-type semiconductor region of the semiconductor multilayer structure

[object Object]

A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0&#xb0; and not more than 35&#xb0;.

Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same

A nitride-based semiconductor light-emitting element disclosed in the present application includes: an active layer having a growing plane which is an m-plane and which is made of a GaN-based semiconductor; and at least one radiation surface at which light from the active layer is to be radiated. The radiation surface has a plurality of protrusions on the m-plane. A base of each of the plurality of protrusions is a region inside a closed curve, and a shape of the base has a major axis and a minor axis. An angle between the major axis and an extending direction of an a-axis of a crystal is not more than 45&#xb0;.

Nitride-based semiconductor light-emitting element

An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structureformed from an AlInGaN (x+y+z=1, x&#x2267;0, y&#x2267;0, z&#x2267;0) semiconductor, and the nitride-based semiconductor multilayer structureincludes an active layer regionhaving an m-plane as an interface; the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each emit polarized light from the active layer region; and, when the polarized light emitted from the first nitride-based semiconductor light-emitting element and the polarized light emitted from the second nitride-based semiconductor light-emitting element have wavelengths &#x3bb;and &#x3bb;, respectively, and thicknesses of the semiconductor chipsof the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element are given as dand d, respectively, the following relations are satisfied: &#x3bb;and d&#x3c;d

Nitride semiconductor light-emitting element, illuminating device, liquid crystal display device, method for producing nitride semiconductor light-emitting element and method for manufacturing illuminating device

A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structurewith a p-type semiconductor region, of which the surfacedefines a tilt angle of one to five degrees with respect to an m plane, and an electrode, which is arranged on the p-type semiconductor region. The p-type semiconductor region is made of an AlInGaN (where x+y+z=1, x&#x2267;0, y&#x2267;0 and z&#x2267;0) semiconductor layer. The electrodeincludes an Mg layer, which is in contact with the surfaceof the p-type semiconductor region, and a metal layerformed on the Mg layer. The metal layeris formed from at least one metallic element that is selected from the group consisting of Pt, Mo and Pd.

Growing community of inventors

Osaka, Japan

Atsushi Yamada