Nippon Mining & Metals Co., Ltd.

Jx Nippon Mining Metals Corporation

Nikko Materials Company, Limited

Atsushi Yabe

Toru Imori

Junichi Ito

Junnosuke Sekiguchi

Yoshiyuki Hisumi

Yoshihisa Fujihira

Yasuhiro Yamakoshi

Shinichiro Senda

A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.

Substrate and manufacturing method therefor

An electroless copper plating solution that is favorable to improve the adhesion of a plating film and realizes uniform plating at a low temperature is characterized by containing a water-soluble nitrogen-containing polymer in an electroless copper plating solution, and preferably the above-mentioned electroless copper plating solution contains glyoxylic acid and phosphinic acid as reducing agents. The water-soluble nitrogen-containing polymer is preferably a polyacrylamide or a polyethyleneimine and, preferably, its weight average molecular weight (Mw) is at least 100,000 and Mw/Mn is 10.0 or less.

Electroless copper plating solution

A plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5 at % to 40 at % of the metal (A). The metal thin film formed by electroless displacement and reduction plating is a metal thin film having a thickness no greater than 10 nm and a resistivity no greater than 10 &#x3bc;&#x3a9;&#xb7;cm. Preferably, the metal (B) has a barrier function with respect to a metal of the metal thin film.

Plated article having metal thin film formed by electroless plating

A plated product made of a substrate having formed thereon an alloy barrier thin film for preventing copper diffusion contains metal B, which has barrier properties in relation to copper and enables displacement plating with the copper ions contained in an electroless copper plating solution, and metal A, which tends to have less ionization than metal B in an electroless copper plating solution at a pH of 10 or higher; the alloy barrier thin film for preventing copper diffusion has a composition wherein metal A constitutes between 15 and 35 at % of the atoms; and a copper thin film is formed on the alloy barrier thin film by electroless plating using an electroless copper plating solution at a pH of 10 or higher.

Plated product having copper thin film formed thereon by electroless plating

A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium, and iridium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.

A method for metal plating with good adhesion to materials that are difficult to plate wherein a material to be plated is surface-treated with a silane coupling agent having in a molecule thereof a functional group with a metal-capturing capability, is heat treated at a high temperature of at least 150&#xb0; C. in air or an inert gas atmosphere, surface treatment is performed with a solution containing a noble metal compound, and electroless plating is performed. Alternatively, a metal plating method is provided wherein a material to be plated is surface-treated with a liquid in which a noble metal compound and a silane coupling agent having in a molecule thereof a functional group with a metal-capturing capability have already been mixed or reacted, is heat treated at a high temperature of at least 150&#xb0; C. in air or an inert gas atmosphere, and electroless plating is performed.

Method for electroless plating and metal-plated article

The present invention provides a plated article that has a thin seed layer having a uniform thickness, formed by electroless plating and allowing formation of ultrafine wiring, and that avoids the complicated formation of a bilayer of a barrier layer and a catalytic metal layer prior to forming the seed layer. The present invention also provides a method for manufacturing the plated article. The plated article has an alloy thin film formed on a substrate and containing a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5at% to 40at% of the metal (A). The metal thin film formed by electroless displacement and reduction plating is a metal thin film having a thickness no greater than 10 nm and a resistivity no greater than 10 &#x3bc;&#x3a9;&#xb7;cm. Preferably, the metal (B) has a barrier function with respect to a metal of the metal thin film.

Plated article having metal thin film formed by electroless plating, and manufacturing method thereof

It is an object of the present invention to provide a novel imidazole alcohol compound that adheres strongly to metal surfaces in metal products, especially copper, aluminum and steel products, and that has a superior rust-preventive effect even in a thin film, and a surface-treating agent using the same. The novel imidazole alcohol compound is expressed by the following general formula (1) show a rust-preventive effect. (In general formula (1), R, Rand Rare each hydrogen, a vinyl group or an alkyl group with 1 to 20 carbon atoms, an aromatic ring may be formed by Rand R, X indicates hydrogen, an alkyl group with 1 to 6 carbon atoms, or a substituent group which may contain N or O, m indicates an integer from 0 to 20, and n and l indicate integers from 1 to 3.) The above-mentioned imidazole alcohol compound can be produced by reacting an imidazole compound and an epoxy alcohol compound.

Method of surface treatment using imidazole compound

The object of the present invention is to provide a metal plating method by a simple process, for example, on resins on which plating has been heretofore impossible. The metal plating method involves surface treating an article to be plated with a liquid prepared by mixing or reacting in advance an organic acid salt of a silane coupling agent containing an azole in a molecule, for example, a coupling agent which is an equimolar reaction product of imidazole and &#x3b3;-glycidoxypropyltrimethoxysilane, and a noble metal compound, and then conducting electroless plating thereon.

Metal plating method and pretreatment agent

It is an object of the present invention to provide a semiconductor wafer on which a thin, smooth, uniform and good adhesive electroless plating layer that can be suitable for a seed layer is formed, and to provide an electroless plating method which is suitable for use in the manufacture of such a semiconductor wafer. A semiconductor wafer is coated with a silane coupling agent which has a functional group that is able to capture a metal, and is further coated with an organic-solvent solution of a palladium compound such as palladium chloride or the like. Afterward, the wafer is electroless plated. As a result of such an electroless plating method, a semiconductor wafer having a thickness of 70 to 5000 angstroms and a mean surface roughness Ra of 10 to 100 angstroms can be obtained.

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Kitaibaraki, Japan

Atsushi Yabe