Pioneer Corporation

Pioneer Electronic Corporation

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Toyoda Gosei Co., Ltd.

Sato Holdings Kabushiki Kaisha

Rohm Co., Ltd.

Showa Denko K.k.

Atsushi Watanabe

Toshiyuki Tanaka

Hiroyuki Ota

Yoshinori Kimura

Mamoru Miyachi

Hirokazu Takahashi

Isamu Akasaki

Tetsuya Takeuchi

Katsuhide Manabe

Takashi Horie

Hiroshi Amano

Yoshiyuki Okuda

Takamasa Yoshikawa

Nobuyasu Negishi

Kiyohide Ogasawara

Masayuki Sonobe

Hitoshi Sato

Kazuto Sakemura

Kazumasa Hiramatsu

Atsuya Ito

Ryota Tanaka

Tomonari Nakada

An IC tag issuing apparatus for writing identification data to IC tags, the IC tags arranged in multiple rows aligned as an IC tag continuous body, and issuing the result, the IC tags issuing apparatus including second antenna units arranged to face each row of the IC tags arranged in multiple rows, respectively, and functioning as a plurality of writing row antenna units for writing the identification data to the IC tags by the electromagnetic induction method and a third antenna unit arranged at a downstream side in the conveyance direction of the IC tag continuous body from the second antenna unit and functioning as an electric-wave type antenna unit for writing the identification data to the IC tags by the electric wave method and constituted to write the identification data by using the third antenna unit to the IC tag in which the identification data could not be written by using the second antenna unit.

IC tag issuing apparatus

An electron emitting device includes an amorphous electron supply layer, an insulating layer formed on the electron supply layer, and an electrode formed on the insulating layer. The electron emits device emitting electrons when an electric field is applied between the electron supply layer and the electrode. The electron emitting device includes a concave portion provided by notching the electrode and the insulating layer to expose the electron supply layer, and a carbon layer covering the electrode and the concave portion except for an inner portion of an exposed surfaceof the electron supply layer and being in contact with an edge portion of the exposed surface of the electron supply layer.

Electron emitting device, display apparatus using electron emitting device, and method of manufacturing electron emitting device

A semiconductor laser device comprises: a first light-emitting element having a first laser part, an insulating layer, and an ohmic electrode layer; and a second light-emitting element having a second laser part, an insulating layer, and an ohmic electrode layer. The first laser part has a ridge waveguide, and is formed by stacking thin films of group-III nitride compound semiconductors (for example, GaN-based semiconductors). The second laser part has a ridge waveguide, and is formed by stacking thin films of group III&#x2013;V compound semiconductors (such as GaAs). The first laser part and the second laser part are integrally bonded to each other by the interposition of an adhesive metal layer which is formed between the ohmic electrode layers. This provides the semiconductor laser device with a small distance between the light-emitting spots of the laser parts.

Semiconductor laser device and method of manufacturing the same

An improved semiconductor laser device is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element including a laser oscillation section provided with a ridge waveguide and formed by forming a group-III nitride semiconductor film on a substrate, an insulating layer and an ohmic electrode layer, ii) a second light emitting element including a laser oscillation section provided with a waveguide and formed by forming III&#x2013;V compound semiconductor film, an insulating layer and an ohmic electrode layer. By virtue of the adhesive metal layer interposed between the two ohmic electrode layers, the two laser oscillation sections are combined together, thereby forming the improved semiconductor laser device which has a small distance between laser light emitting spots of the two laser oscillation sections.

A III-V nitride semiconductor laser device demonstrates an excellent emission characteristic without an increase in production cost. The refractive index of a p-side optical guiding layer is larger than that of an n-side guide layer.

III-V nitride semiconductor laser device

A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa ) In N (0&lE;x&lE;1, 0&lE;y&lE;1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Al Ga In N (0&lE;x&prime;&lE;1, 0&lE;y&prime;&lE;1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Al Ga In N (0&lE;x&Prime;&lE;1, 0&lE;y&Prime;&lE;1) and deposited filling the aperture of the current constricting layer, and a clad layer made of Al Ga In N (0&lE;u&lE;1, 0&lE;v&lE;1) and deposited on the electrode-side guide layer.

Group III nitride compound semiconductor laser and manufacturing method thereof

Method for manufacturing a nitride semiconductor device and device manufactured by the method

A semiconductor light emitting device having multi-layer structure of group-3 nitride-based semiconductors is disclosed. The light emitting device has lower density of threading dislocation extending from a boundary of a crystal substrate through the multi-layer structure, thereby obtaining good luminescence characteristics. The nitride semiconductor light emitting device has the multi-layer structure. The multi-layer structure comprises a first crystal layer containing substantially pyramidal crystal grains, each of grains has a crystal face non-parallel to a surface of the substrate, and the pyramidal crystal grains are distributed at random like islands. The structure further comprises a second crystal layer formed on the first crystal layer with a compound having a different lattice constant from that of the first crystal layer. The second crystal layer smoothes a surface of the first crystal layer parallel to the surface of the substrate.

Nitride-based semiconductor light emitting device and manufacturing method therefor

A GaN-based semiconductor light emitting device is provided that has superior light emitting characteristics by controlling occurrence of a threading dislocation and keeping the flatness of a film GaN-based semiconductor light emitting device fabrication method comprises forming steps of at least forming an undoped gallium-nitride underlying layer on a low-temperature buffer layer while keeping the pressure in a reactor at a value close to atmospheric pressure.

Gallium-nitride-based semiconductor light emitting device and fabrication method

In a semiconductor light-emitting device having a multilayered structure which consists essentially of layers of Group III nitride semiconductors (Al,Ga,),In,N (0&lE;x&lE;1, 0&lE;y&lE;1) which are different from each other in chemical composition ratio, generation of cracks at an interface propagating from an interface between adjacent layers is prevented. Two adjacent layers within the multilayered structure, which include a lower layer having a lattice constant larger than a lattice constant of an upper layer of the two adjacent layers, have a portion close to the interface of the two adjacent layers doped such that an element different from the Group III nitride semiconductors is added in a higher concentration, i.e. in a higher distribution density than in other portions thereof.

Group III nitride semiconductor light-emitting device having anticracking feature

A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.

Process for producing a luminous element of group III nitride

Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N (0.ltoreq.x.gtoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400.degree. to 1300.degree. C. and is held in the atmosphere where a metaloganic compound containing at least aluminum and a nitrogen-containing compound are present to form a thin intermediate layer containing at least aluminum and nitrogen on a part or the entirety of the surface of the single crystal substrate, and then at least one layer or multiple layers of a single crystal of (Ga.sub.1-x Al.sub.x).sub. 1-y In.sub.y N are formed on the intermediate layer.

Method of fabricating a gallium nitride based semiconductor device with

A compound semiconductor vapor phase epitaxial device comprises a cylindrical reactor vessel, a plurality of flow channels disposed in the reactor vessel, a crystal substrate disposed in one of the flow channels, a plurality of gas supply pipes for respectively supplying gas containing element of compound to be grown on the crystal substrate and at least one slit or linearly arranged fine holes communicating adjacent two flow channels so as to extend in a direction normal to a direction of the gas flow to form a laminate layer flow consisting of two or more than two gases at an upstream portion of location of the crystal substrate.

Compound semiconductor vapor phase epitaxial device

A semiconductor light emitting element with a high light-emitting efficiency, which is constituted in such a way that, of the composition of its GaN and AlN epitaxial layer, part of N is substituted by P, thus ensuring good lattice-matching with the substrate crystal, ZnO.

Growing community of inventors

Tsurugashima, Japan

Atsushi Watanabe