Matsushita Electric Industrial Co., Ltd.

Fujitsu Corporation

Atsushi Watanabe

Kenichi Hidaka

Katsushi Tara

Eiji Yasuda

Yasuyuki Masumoto

Masahiko Hashimoto

Shinji Yamamoto

Kaname Motoyoshi

Tadayoshi Nakatsuka

Akihisa Adachi

Shinji Fukumoto

Naoko Azuma

Noburu Rinoie

Takamitsu Kobayashi

The present invention provides a miniaturized semiconductor device at low-cost having high integration density and for restraining an increase of an insertion loss and a deterioration of an isolation characteristic of a circuit resulting from parasitic inductance of gold wires. The semiconductor device includes a control semiconductor chip, a switch circuit semiconductor chip, a substrate, external terminals, gold wires and MIM capacitors. The control semiconductor chip controls a high frequency signal processing by the switch circuit semiconductor chip. The switch circuit semiconductor chip is mounted on the control semiconductor chip and processes the high frequency signal. The control semiconductor chip is mounted on the substrate. The external terminals are interfaces with the outside. The gold wires connect among the control semiconductor chip, the switch circuit semiconductor chip and the external terminals. The MIM capacitors are formed on the control semiconductor chip and the inside of the substrate, and process the high frequency signal.

Semiconductor device

A semiconductor integrated circuit includes one or more function blocks, a nonvolatile memory unit which stores therein coded license information, and a decoder circuit which decodes the license information stored in the nonvolatile memory unit, and makes one of the function blocks either usable or unusable depending on the decoded license information.

Semiconductor integrated circuit with function to manage license information

A diode logic circuit which can select a high voltage from among the voltages of a number of control voltage input terminals using a number of diodes made of Schottky junctions is integrally formed on a compound semiconductor substrate on which MESFET stages for switching and for securing isolations have been formed. In addition, the MESFET stages for switching are controlled by the voltages of the number of control voltage input terminals and the MESFET stages for securing isolations are controlled by the OR voltage that is outputted from the diode logic circuit.

High frequency switching circuit device

The present invention, which aims to provide a gallium arsenide field-effect transistor that can reduce degradation of field-effect transistor characteristics, and to realize miniaturization of the transistor, includes: a substrate; a mesa which includes a channel layer and is formed on the substrate; a source electrode formed on the mesa; a drain electrode; and a gate electrode, wherein, on the mesa, a top pattern is formed in which finger portions of the source electrode and the drain electrode which are formed in comb-shape are located so as to interdigitate, and a gate electrode is formed between the source electrode and the drain electrode, while common portions, which are base parts of the finger portions of the source and drain electrodes, are formed on the surface of the mesa, and the part located below the straight portion which is parallel to the finger portions of the gate electrode is electrically separated from the part located below a corner portion that connects neighboring straight portions of the gate electrode.

Field-effect transistor

A first low noise amplifier (LNA) is provided with a control terminal () for turning of/off the low noise amplifier (LNA). Power terminals of the low noise amplifier (LNA) and a second low noise amplifier (LNA) are commonly connected, and are connected to a power supply () via a power supply switch (). Ground terminals of the two amplifiers (LNA) and (LNA) are commonly connected, and a constant current source () is connected between the common terminal and the ground. The amplifiers (LNA) and (LNA) are turned on/off by switching the voltage applied to the control terminal () of the first low noise amplifier (LNA) between a high potential and a low potential. The power supply switch () is turned off during signal transmission. Therefore, an LNA block can be provided by using only one power supply switch (), whereby it is possible to reduce the number of devices from that in the prior art, thereby realizing a reduction in the size thereof.

Semiconductor apparatus and communication apparatus

An ultrasonic flowmeter includes a flow passage and an ultrasonic transducer for measuring the flow rate in the flow passage wherein the ultrasonic transducer is equipped with a piezoelectric material having electrodes on the opposed surfaces thereof, one of which is used as an ultrasonic wave transmitting/receiving surface and faces the flow passage. The lengths of the sides of the transmitting/receiving surface is so determined that the vibration in the electrode direction is the main mode, preferably that the ratio of the lengths of the sides of the transmission/reception surface to the thickness is not greater than 0.8. Consequently, because the flow meter uses the thickness longitudinal vibration of the piezoelectric material as the main mode, the ultrasonic transducer has a high sensitivity, a high speed response and a small size and the ultrasonic flow meter has a high accuracy and is compact.

Growing community of inventors

Kadoma, Japan

Atsushi Watanabe