Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Atsushi Umekawa

Tokunobu Akao

Tetsuya Kosugi

Hideto Yamaguchi

Akihiro Osaka

Motoya Takewaki

Masahisa Okuno

Shinji Yashima

Takeo Hanashima

Hiroaki Hiramatsu

Unryu Ogawa

Mikio Ohno

Kaichiro Minami

Tomoyasu Miyashita

Takayuki Nakada

Daigi Kamimura

Shinobu Sugiura

Toru Kagaya

Takuya Joda

Toshiki Fujino

Katsuyoshi Hamano

Kazuhiro Kimura

Yosuke Kuwata

Akinori Ishii

Akihiko Hiratsuka

Kaoru Kataoka

Ryosuke Arai

There is provided a gas supply system including a supplying part connected to a reaction vessel and a blocking part provided at an upstream side of the supplying part and directly connected to the supplying part without providing a pipe between the blocking part and the supplying part. The gas supply system further including a switching part provided at an upstream side of the blocking part and configured to supply a gas into the reaction vessel in cooperation with the blocking part and an exhaust part configured to exhaust an inside of a pipe provided between the switching part and the blocking part.

Substrate processing apparatus and method of manufacturing semiconductor device

A thermocouple includes: a temperature measuring portion configured to measure an internal temperature of a reaction tube; a main body portion provided therein with a wire which constitutes the temperature measuring portion; and a cushioning portion attached to the main body portion at least in the vicinity of the temperature measuring portion, wherein the thermocouple is fixed to an outer surface of the reaction tube in a state in which the thermocouple makes contact with the reaction tube through the cushioning portion.

Substrate processing apparatus, and thermocouple

A substrate processing apparatus, includes a reaction furnace, a preparatory chamber provided below the reaction furnace, an elevating mechanism configured to raise/lower a substrate holder between the reaction furnace and the preparatory chamber, a fluid circulation mechanism including a suction part for sucking a fluid within the preparatory chamber, a pipe part constituting a flow path through which the fluid flows from the suction part to a supply part, and a cooling mechanism, provided in the flow path, for cooling the fluid, and a control part for controlling the fluid circulation mechanism and the elevating mechanism to circulate the fluid sucked from the suction part through the flow path, and supply the fluid from the supply part to the preparatory chamber. The cooling mechanism is disposed adjacent to the suction part to cool the fluid introduced from the suction part before circulating the fluid through the flow path.

Substrate processing apparatus, recording medium, and fluid circulation mechanism

There is provided a substrate processing apparatus including a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube; a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube; a gas supply system provided at an upstream side of the nozzle; a blocking part provided at a boundary between the gas supply system and the nozzle; and a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle.

A heating part of covering and heating a gas pipe includes: a thermal insulation portion disposed outside a heat generation body; an enclosure configured to enclose the thermal insulation portion and the heat generation body; a fastening part installed outside the enclose and configured to fasten one end portion and the other end portion of the enclosure in a state in which the one end portion and the other end portion of the enclosure adjoin each other; and a temperature sensing part disposed at the side of the gas pipe with respect to the enclosure at a position facing a surface of the gas pipe and formed in a plate shape with a major surface thereof oriented toward the gas pipe.

Heating part, substrate processing apparatus, and method of manufacturing semiconductor device

A substrate processing a technology including: a substrate holder; a tubular reactor that houses the substrate holder; an inlet flange connected to the tubular reactor including a plurality of gas introduction ports; a lid that closes a lower opening of the inlet flange in a manner such that the substrate holder can be carried in and out; heater elements disposed along the outer peripheral surface of the inlet flange while avoiding the gas introduction ports; temperature sensors thermally coupled to the inlet flange or any heater element and adapted to detect temperatures; and a temperature controller that divides of the heater elements into groups and controls power supply to the respective heater elements independently for each of the groups based on temperatures detection temperatures detected by the temperature sensors.

Substrate processing apparatus and manufacturing method of semiconductor device

Inner tube of reactor for semiconductor fabrication

Heating within a plane of a substrate may be uniform while a thermal budget is decreased. A substrate processing apparatus includes a process chamber configured to accommodate a substrate; a substrate mounting unit installed in the process chamber and configured to have the substrate placed thereon; an electromagnetic wave supply unit configured to supply an electromagnetic wave to the substrate placed on the substrate mounting unit; and a choke groove formed on a side surface of the substrate mounting unit.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

A substrate processing apparatus includes a process chamber which processes a substrate, a conductive substrate support table which is installed within the process chamber, a dielectric plate on which the substrate is mounted, the dielectric plate being placed on the substrate support table, a microwave generator which is installed outside the process chamber, and a microwave supplying unit which supplies a microwave generated by the microwave generator into the process chamber.

Substrate processing apparatus and method for manufacturing semiconductor device

Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit.

Substrate processing apparatus having rotatable slot-type antenna and method of manufacturing semiconductor device using the same

A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of &#xbc; wavelength of the microwave supplied when the substrate is processed.

Growing community of inventors

Toyama, Japan

Atsushi Umekawa