Rohm Co., Ltd.

Tohoku University

Atsushi Tsukazaki

Masashi Kawasaki

Shunsuke Akasaka

Ken Nakahara

Akira Ohtomo

Kentaro Tamura

Hiroyuki Yuji

Kohei Fujiwara

A Hall element that exhibits an anomalous Hall effect includes a substrate and a thin film as a magneto-sensitive layer on the substrate, the thin film having a composition of FeSn, where 0.5&#x2264;x&#x3c;0.9. The thin film may be made of an alloy of Fe and Sn, and a dopant element. The dopant element may be a transition metal element that modulates spin-orbit coupling or magnetism. The dopant element may be a main-group element that has a different number of valence electrons from Sn and modulates carrier density. The dopant element may be a main-group element that modulates density of states.

Hall element

A ZnO-based semiconductor device includes an n type ZnO-based semiconductor layer, an aluminum oxide film formed on the n type ZnO-based semiconductor layer, and a palladium layer formed on the aluminum oxide film. With this configuration, the n type ZnO-based semiconductor layer and the palladium layer form a Schottky barrier structure.

ZnO-based semiconductor device and manufacturing method thereof

A p-type MgZnO-based thin film () is formed on a substrate () made of a ZnO-based semiconductor. The p-type MgZnO-based thin film () is composed so that X as a ratio of Mg with respect to Zn therein can be 0&#x2266;X&#x3c;1, preferably 0&#x2266;X&#x2266;0.5. In the p-type MgZnO thin film (), nitrogen as p-type impurities which become an acceptor is contained at a concentration of approximately 5.0&#xd7;10cmor more. The p-type MgZnO thin film () is composed so that n-type impurities made of a group IV element such as silicon that becomes a donor can have a concentration of approximately 1.0&#xd7;10cmor less. The p-type MgZnO thin film () is composed so that n-type impurities made of a group III element such as boron and aluminum which become a donor can have a concentration of approximately 1.0&#xd7;10cmor less.

p-Type MgZnO-based thin film and semiconductor light emitting device

Provided are a ZnO-based thin film and a ZnO-based semiconductor device which allow: reduction in a burden on a manufacturing apparatus; improvement of controllability and reproducibility of doping; and obtaining p-type conduction without changing a crystalline structure. In order to be formed into a p-type ZnO-based thin film, a ZnO-based thin film is formed by employing as a basic structure a superlattice structure of a MgZnO/ZnO super lattice layer. This superlattice component is formed with a laminated structure which includes acceptor-doped MgZnO layersand acceptor-doped ZnO layers. Hence, it is possible to improve controllability and reproducibility of the doping, and to prevent a change in a crystalline structure due to a doping material.

ZnO-based thin film and ZnO-based semiconductor element

Provided is a ZnO-based semiconductor device capable of growing a flat ZnO-based semiconductor layer on an MgZnO substrate having a main surface on the lamination side oriented in a c-axis direction. ZnO-based semiconductor layerstoare epitaxially grown on an MgZnO (0&#x2266;x&#x3c;1) substratehaving a +C surface (0001), as a main surface, inclined at least in an m-axis direction. A p-electrodeis formed on the ZnO-based semiconductor layer, and an n-electrodeis formed on the underside of the MgZnO substrate. Thereby, steps regularly arranged in the m-axis direction can be formed on the surface of the MgZnO substrate, and a phenomenon called step bunching is prevented. Consequently, the flatness of a film of the semiconductor layers laminated on the substratecan be improved.

Growing community of inventors

Miyagi, Japan

Atsushi Tsukazaki