Sharp Kabushiki Kaisha Corporation

Nissin Electric Co., Ltd.

Emd Corporation

Atsushi Tomyo

Eiji Takahashi

Takashi Mikami

Tsukasa Hayashi

Kenji Kato

Tadayoshi Miyamoto

Shigeyasu Mori

Kazuhide Tomiyasu

Kiyoshi Ogata

Kazuatsu Ito

Yuichi Setsuhara

Shigeaki Kishida

A light detection device includes: a TFT having a semiconductor layer supported on a substrate, a source electrode, a drain electrode, and a gate electrode; a photodiode having a bottom electrode electrically connected to the drain electrode, a semiconductor laminate structure, and a top electrode; and an electrode made of the same conductive film as the bottom electrode and arranged on the semiconductor layer with an insulating layer interposed therebetween.

Light detection device with integrated photodiode and thin film transistor

The present invention has an object of improving the operation stability of a semiconductor device that detects radiations without decreasing the yield thereof. A semiconductor device includes an active matrix substrate () including a plurality of TFTs () and a plurality of pixel electrode (); a photoelectric conversion substrate () located to face the active matrix substrate (); an upper electrode () provided on a surface of the photoelectric conversion substrate () opposite to the active matrix substrate (); and a plurality of connection electrodes () provided between the active matrix substrate () and the photoelectric conversion substrate(), the plurality of connection electrodes () being formed of metal material. Each of the plurality of connection electrodes () is in direct contact with any of the plurality of pixel electrodes () and with the photoelectric conversion substrate (), overlaps a semiconductor layer () of any of the plurality of TFTs () as seen in a direction normal to the active matrix substrate (), and contains a metal element having an atomic number of 42 or greater and 82 or smaller.

Semiconductor device and method for manufacturing same

There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber () provided with a silicon sputter target (e.g., target), or the hydrogen gas and the silane-containing gas are supplied into the chamber () without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/H&#x3b2;) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity H&#x3b2; of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

Silicon dot forming method and silicon dot forming apparatus

A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.

Silicon object forming method and apparatus

Growing community of inventors

Osaka, Japan

Atsushi Tomyo