Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Minolta Company, Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Atsushi Tomozawa

Eiji Fujii

Ryoichi Takayama

Hideo Torii

Satoru Fujii

Taku Hirasawa

Akiko Murata

Takeshi Kamada

Masumi Hattori

Satoshi Fujii

Masafumi Kobune

Masaaki Suzuki

Masaki Aoki

Yoshihiro Tomita

Michiyoshi Nagashima

Toshihiro Kuriyama

Isaku Kanno

Yasuhiko Horio

Hiroki Moriwake

Masayuki Okano

Ken Kamata

Eiji Fuji

A solid-state imaging device of the present invention includes a base, a plurality of photoelectric conversion portionsformed in a surface of the base, and an insulating filmformed above the base. Openingsare formed in the insulating filmso that each of the openingsis located above each of the photoelectric conversion portions. Optical waveguideshaving a refractive index higher than that of the insulating filmare formed in each of the openings. And the optical waveguidesare made of a composite material containing a resinand inorganic particles

Solid-state image pickup element, method for manufacturing such solid-state image pickup element and optical waveguide forming device

A plurality of light receiving elements are arranged in a matrix with uniform space therebetween in a light receiving region defined on a semiconductor substrate. A plurality of read-out electrodes are formed on the semiconductor substrate in an arrangement corresponding to the light receiving elements to read charges generated by the light receiving elements, a light shield film having openings positioned above the light receiving elements is formed to cover the read-out electrodes, first optical waveguides are formed in the openings above the light receiving elements and second optical waveguides are formed on the light shield film. The second optical waveguides are in the form of dots, stripes or a grid when viewed in plan.

Solid state imaging device and method for manufacturing the same

A piezoelectric element includes two electrode films and a layered piezoelectric film which is sandwiched between the electrode films and made of two thin piezoelectric films each having preferred orientation along the (111) plane. The two thin piezoelectric films are aggregates of columnar grains, respectively, which are continuously linked to each other. The columnar grains of the second thin piezoelectric film have a larger average cross-sectional diameter than the columnar grains of the first thin piezoelectric film. The ratio of the thickness of the layered piezoelectric film to the average cross-sectional diameter of the columnar grains of the second thin piezoelectric film is 20 to 60 inclusive.

Piezoelectric element, inkjet head, angular velocity sensor, methods for manufacturing them and inkjet recording device

In a piezoelectric element, an adhesive layeris provided on a substrate, a first electrode layermade of a noble metal containing titanium or titanium oxide is provided on the adhesive layer, and an orientation control layerthat is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer. In the vicinity of a surface of the orientation control layerthat is closer to the first electrode layer, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layerthat is closer to the orientation control layer, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layertoward the opposite side. Further, a piezoelectric layerthat is preferentially oriented along a (001) plane is provided on the orientation control layer

Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus

In a piezoelectric element, a cubic or tetragonal orientation control layer () is provided on a first electrode layer (), and formed on the orientation control layer () is a piezoelectric layer () having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AB)Ohas been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer () is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer () and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.

Piezoelectric element, ink jet head, angular velocity sensor, and ink jet recording apparatus

A first electrode thin film is formed on an upper surface of the oxygen ion conductive thin film so as to have a through hole. A resistor is formed on part of the upper surface of the oxygen conductive thin film located in the through hole. Thus, the oxygen ion conductive thin film can be directly heated by the resistor, so that oxygen ions can be speedily transferred with a low power. Therefore, the oxygen ion conductivity of the oxygen ion conductive thin film can be improved.

Oxygen ion conductor device, method for fabricating oxygen ion conductor device, and oxygen concentration control system

In a piezoelectric elementa first electrode layermade of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrateand a piezoelectric layermade of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layerso that the piezoelectric layeris preferentially oriented along the (001) plane.

In a piezoelectric element, a first electrode layermade of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrate, and a piezoelectric layermade of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layerso that the piezoelectric layeris preferentially oriented along the (001) plane.

Piezoelectric element, ink jet head, angular velocity sensor, manufacturing method thereof, and ink jet type recording apparatus

A piezoelectric element includes a first electrode layerprovided on a substrateand made of a noble metal to which at least one additive selected from the group consisting of Mg, Ca, Sr, Ba, Al and oxides thereof is added, an orientation control layerprovided on the first electrode layerand made of a cubic or tetragonal perovskite oxide that is preferentially oriented along a (100) or (001) plane, and a piezoelectric layerprovided on the orientation control layerand made of a rhombohedral or tetragonal perovskite oxide that is preferentially oriented along a (001) plane.

In the liquid discharge head for discharging liquid such as ink like the ink jet head, at least a part on a surface of a piezoelectric element on the side of a liquid chamber member (ink chamber member) is composed of a nucleus forming assistance material contained layer containing a material for assisting nucleus forming for growth of plating at the time of forming the liquid chamber member on the surface by means of the electroless plating, and the liquid chamber member is formed on the nucleus forming assistance material contained layer by the electroless plating.

Liquid discharge head and manufacturing method thereof

A thin film thermistor element is formed by forming on a backing substrate of alumina a thermistor thin film and a pair of comb electrodes and formed of a thin film of Pt. The thermistor thin film which is formed of, for example, complex oxide of Mn&mdash;Co&mdash;Ni, has either a spinel type crystal structure which is priority oriented or oriented mainly in a (100) surface or a bixbite type crystal structure which is priority oriented in a (100) or (111) surface. Alternatively, the thermistor thin film is formed of LaCoO and has a rhombohedral bixbite type crystal structure. This makes it possible to hold the variation in resistance value low thereby to achieve high accuracy, and the deterioration with time can be held low and the high temperature durability can be improved, for the achievement of high reliability.

Thin film thermistor element and method for the fabrication of thin film thermistor element

The present invention provides a PTC thermistor element low in electric resistance at room temperature and suitable for monolithic incorporation with an integrated circuit. According to the present invention, the PTC thermistor film is subjected to rapid heating by heat irradiation in the annealing step. An n-type semiconductor is interposed between the electrodes and the PTC thermistor film, and a PTC thermistor film is also interposed between the n-type semiconductor and the electrode. Further, a plurality of such thermistor elements are parallel-connected to each other, and at least one of them is connected opposite to the other elements.

PTC thermistor element and method for producing the same

The invention provides a compact and high performance infrared radiation detector. The infrared radiation detector contains: a substrate; and at least two infrared radiation detector units selected from the group consisting of a pyroelectric infrared radiation detector unit, a resistive bolometer type infrared radiation detector unit and a ferroelectric bolometer type infrared radiation detector unit, the infrared radiation detector units being disposed on the same side of the substrate.

Infrared radiation detector and method of manufacturing the same

The present invention provides a temperature sensor element having excellent heat resistance, quick heat response, stable resistance, and high reliability with a less variation in resistance against time. The temperature sensor element includes a thermo-sensitive film mainly composed of a heat sensitive material having electrical resistance varies depending on the temperature; a pair of electrode films arranged to measure the electrical resistance in the direction of the thickness of the thermo-sensitive film, a base plate mainly composed of a heat-resistant insulating material for supporting the thermo-sensitive film and the electrode films, an anti-diffusion film interposed between the thermo-sensitive film and the electrode film in the vicinity of the base plate, and a film mainly composed of a heat-resistant insulating material for covering the thermo-sensitive film and the electrode films except the lead-connecting terminals of the electrode films. The thermo-sensitive film is composed of an oxide of corundum crystalline structure represented by the formula of (Al.sub.1-x-y Cr.sub.x Fe.sub.y).sub.2 O.sub.3, where 0.05.ltoreq.x+y.ltoreq.0.95, and 0.ltoreq.y/(x+y).ltoreq.0.6, and the anti-diffusion film is composed of an oxide of corundum crystalline structure represented by the formula of (Al.sub.1-x-y Cr.sub.x Fe.sub.y).sub.2 O.sub.3, where 0.ltoreq.x+y.ltoreq.0.95.

Growing community of inventors

Osaka, Japan

Atsushi Tomozawa