Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Sony Coproration

Atsushi Toda

Hirotaka Akao

Akira Ishibashi

Tetsuji Yamaguchi

Ko Ishimoto

Itaru Oshiyama

Keisuke Hatano

Yoshihiko Kuroki

Susumu Inoue

Genta Sato

Teruo Hirayama

Michihiro Ohnishi

Yoichi Otsuka

Yuhi Yorikado

Yusuke Oike

Hirofumi Sumi

Katsuya Shirai

Atsushi Yamamoto

Shigeru Kojima

Norikazu Nakayama

Yoshifumi Mori

Satoshi Ito

Futoshi Hiei

Hiromi Wano

Yasunori Koshino

Koji Furumi

Toshifumi Wakano

Masashi Nakata

Hiroki Sato

Tadayuki Taura

Keiji Tatani

Eriko Matsui

Yusuke Otake

Satoshi Taniguchi

Shunsuke Maruyama

Yuko Ohgishi

Masanori Kasai

Tomonori Hino

Yuriko Kaino

John Rennie

Takeharu Asano

Tomohiko Baba

Shinichiro Noudo

Shinichi Yoshimura

Kazushi Nakano

Eisaku Kato

Kenji Azami

Daisuke Imanishi

Hiroyasu Noguchi

A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter. One photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts light in a visible light region, the other photoelectric conversion region photoelectrically converts light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.

Solid-state imaging apparatus and electronic apparatus

There is provided a resonator structure that obtains a highly accurate optical spectrum. The resonator structure includes a stacked structure that includes a semiconductor layer, a first resonator, a first reflection layer, a second resonator, a second reflection layer stacked in this order, allows light of a specific wavelength band to be transmitted therethrough, the semiconductor layer having a first average refractive index, the first resonator having a second average refractive index lower than the first average refractive index, and the first reflection layer having a third average refractive index higher than the second average refractive index.

Resonator structure, imaging element, and electronic apparatus

To provide a filter-based sensor capable of enhancing reliability and image quality. There is provided a solid-state imaging device including pillar structures, a filter element, a semiconductor substrate, and a photoelectric conversion element formed in the semiconductor substrate, in which the pillar structures are disposed above the semiconductor substrate in a cross-sectional view and the filter element is disposed between the semiconductor substrate and the pillar structures, and the pillar structures are configured to change a direction of an incident light.

Solid-state imaging device and electronic apparatus

The present disclosure relates to a solid-state imaging device that can achieve a high S/N ratio at a high sensitivity level without any decrease in resolution, and to an electronic apparatus. In the upper layer, the respective pixels of a photoelectric conversion unit that absorbs light of a first wavelength are tilted at approximately 45 degrees with respect to a square pixel array, and are two-dimensionally arranged in horizontal directions and vertical directions in an oblique array. The respective pixels of a photoelectric conversion unit that is sensitive to light of a second or third wavelength are arranged under the first photoelectric conversion unit. That is, pixels that are √{square root over (2)} times as large in size (twice as large in area) and are rotated 45 degrees are arranged in an oblique array. The present disclosure can be applied to solid-state imaging devices that are used in imaging apparatuses, for example.

Solid-state imaging device with organic photoelectric conversion film over photodiodes

Provided is an electronic device that includes a plurality of pixels, each of at least two pixels of the plurality of pixels includes a first lens that collects incident light, a first light shielding film portion having a first hole through which a part of the incident light that has been collected passes, and a photoelectric conversion unit that converts the incident light having passed through the first hole. A shape of the first hole with respect to the first light shielding film portion is different between a first pixel among the at least two pixels and a second pixel different from the first pixel among the at least two pixels.

Electronic device

A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.

Spectral performance in a wide wavelength range is improved. A solid-state imaging device according to an embodiment includes: a pixel array unit in which a plurality of photoelectric conversion elements (PD) are arranged in a two-dimensional lattice form; a plurality of diffraction gratings provided corresponding one-to-one to light-receiving surfaces of the plurality of photoelectric conversion elements; and pixel circuits configured to generate pixel signals on the basis of charge accumulated in the photoelectric conversion elements, wherein a period of a first diffraction grating positioned at a first imaging height is different from a period of a second diffraction grating positioned at a second imaging height different from the first imaging height.

A ripple is suppressed in a solid-state imaging element that obtains a spectral spectrum. The solid-state imaging element includes a surface layer, a filter layer, and a photoelectric conversion layer. In the solid-state imaging element, the surface layer has a thickness exceeding a half of a coherence length of incident light. Furthermore, in the solid-state imaging element, the filter layer transmits predetermined target light of the incident light transmitted through the surface layer and reflects a rest of the incident light transmitted through the surface layer to the surface layer. Furthermore, in the solid-state imaging element, the photoelectric conversion layer photoelectrically converts the predetermined target light transmitted through the filter layer.

Solid-state imaging element, electronic device, and method of manufacturing electronic device

Provided is an imaging device including a light source that radiates light in at least two different wavelength bands and an imaging element that acquires signals individually from the light in the two different wavelength bands. The two different wavelength bands include a first wavelength band from 400 to 580 nm for use in dermatoglyphic pattern authentication, and a second wavelength band of 650 nm or more mainly including near-infrared rays for use in vein authentication.

Imaging device

To improve detection efficiency in a solid-state imaging element including a SPAD in which an electrode and wiring are placed in a central portion. A solid-state imaging element includes a photodiode and a light collecting section. The photodiode includes a light receiving surface and an electrode placed on the light receiving surface, and that outputs an electrical signal in accordance with light incident on the light receiving surface in a state where a voltage exceeding a breakdown voltage is applied to the electrode. The light collecting section causes light from a subject to be collected in the light receiving surface other than a region where the electrode is placed.

Solid-state imaging element and imaging device with avalanche photodiode

There is provided an imaging device, an electronic apparatus including an imaging device, and an automotive vehicle including an electronic apparatus including an imaging device, including: a first substrate including a first set of photoelectric conversion units; a second substrate including a second set of photoelectric conversion units; and an insulating layer between the first substrate and the second substrate; where the insulating layer has a capability to reflect a first wavelength range of light and transmit a second wavelength range of light that is longer than the first wavelength range of light.

Apparatus for wavelength conversion using layers of different photoelectric conversion materials for detecting visible and infared light simultaneously

The present disclosure relates to a solid-state imaging device and an electronic apparatus that make it possible to estimate a normal vector to one direction with high accuracy with a simple configuration. A polarization image sensor includes a plurality of polarizers disposed on a chip and having different polarization directions, and a plurality of photoelectric conversion sections having light reception regions for receiving light transmitted through the polarizers, the light reception regions being symmetrical. The present disclosure can be applied, for example, to a polarization image sensor or the like that estimates a surface and a shape of an imaging object.

The present disclosure relates to a solid-state imaging device that can achieve a high S/N ratio at a high sensitivity level without any decrease in resolution, and to an electronic apparatus. In the upper layer, the respective pixels of a photoelectric conversion unit that absorbs light of a first wavelength are tilted at approximately 45 degrees with respect to a square pixel array, and are two-dimensionally arranged in horizontal directions and vertical directions in an oblique array. The respective pixels of a photoelectric conversion unit that is sensitive to light of a second or third wavelength are arranged under the first photoelectric conversion unit. That is, pixels that are &#x221a;2 times as large in size (twice as large in area) and are rotated 45 degrees are arranged in an oblique array. The present disclosure can be applied to solid-state imaging devices that are used in imaging apparatuses, for example.

Imaging device with tilted pixels

Growing community of inventors

Kanagawa, Japan

Atsushi Toda