Sony Corporation

Koito Manufacturing Company, Ltd.

Sony Semiconductor Solutions Corporation

Canon Kabushiki Kaisha

Sony Group Corporation

Sony Coproration

Atsushi Toda

Hideaki Takeuchi

Akira Suzuki

Masayasu Yamashita

Masashi Yamazaki

Yusuke Kasaba

Masahito Kato

Hirotaka Akao

Goichi Oda

Akira Ishibashi

Tetsuji Yamaguchi

Naoki Fukushima

Taku Watanabe

Ko Ishimoto

Itaru Oshiyama

Hiroki Shibata

Keisuke Hatano

Yoshihiko Kuroki

Susumu Inoue

Yosuke Kishi

Katsuichi Abe

Kenta Shibukawa

Genta Sato

Hisashi Taniguchi

Junichi Matsumura

Teruo Hirayama

Bunro Noguchi

Shunsuke Matsushita

Michihiro Ohnishi

Yoichi Otsuka

Yuhi Yorikado

Jun Yabuzaki

Yusuke Oike

Hideaki Hasegawa

Hirofumi Sumi

Naoya Asanuma

Naoki Matsumaru

Satoshi Sunahara

Takeo Shoji

Kiyoshi Wada

Go Shindo

Motonari Ito

Akihiro Matsumoto

Akiyoshi Ozaki

Soichi Yagi

Atsushi Yamamoto

Katsuya Shirai

Shigeru Kojima

Masayasu Ito

Toshifumi Wakano

Masashi Nakata

Hiroki Sato

Hitoshi Takeda

Tadayuki Taura

Keiji Tatani

Kohei Matsuda

Norikazu Nakayama

Yoshifumi Mori

Masaki Hirose

Kazumi Yamauchi

Daisuke Baba

Satoshi Ito

Kentaro Kawata

Yusuke Jota

Makoto Izawa

Shun Sato

Kazuki Takahashi

Hirokazu Fujino

Futoshi Hiei

Hiromi Wano

Yutaka Nakanishi

Eriko Matsui

Yusuke Otake

Masanobu Saito

Keiichi Tajima

Satoshi Taniguchi

Shunsuke Maruyama

Yuko Ohgishi

Masanori Kasai

Tomonori Hino

Yuriko Kaino

John Rennie

Takeharu Asano

Tomohiko Baba

Masahiro Kusagaya

Shinichiro Noudo

Shinichi Yoshimura

Go Torii

Kazushi Nakano

Hideki Uchida

Eisaku Kato

Masaru Sasaki

Hiraku Sasaki

Kazuo Goto

Kenji Azami

Toshikazu Tomono

Naohiro Yamada

A press-bonded sheet in which two sheet portions are press-bonded in a peelable state is manufactured by a method including steps of: forming an adhesive layer containing powder adhesive on a sheet; heating the adhesive layer to fix it to the sheet; opposing an area on the sheet where the adhesive layer is fixed and an area on the same sheet or on a different sheet where another adhesive layer is formed and fixed; and press-bonding the opposed areas. The fracture strain of a main constituent material of the powder adhesive is 10% or more and less than 1000%.

Press-bonded sheet manufacturing method, press-bonded sheet manufacturing apparatus, and image forming apparatus

A vehicle lamp controller, a vehicle lamp system, and a vehicle lamp control method are provided. The vehicle lamp system includes an acceleration sensor, a vehicle lamp, and the vehicle controller. The controller includes a receiver configured to receive an acceleration information detected by the acceleration sensor, a control unit configured to derive a vehicle longitudinal direction acceleration and a vehicle vertical direction acceleration from the acceleration information, and to generate a control signal for instructing an adjustment of an optical axis of the vehicle lamp, based on a variation in a ratio between a temporal change amount of the vehicle longitudinal direction acceleration and a temporal change amount of the vehicle vertical direction acceleration during at least one of an acceleration and a deceleration of a vehicle, and a transmitter configured to transmit the control signal to an optical axis adjusting portion of the vehicle lamp.

Vehicle lamp controller, vehicle lamp system, and vehicle lamp control method

A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter. One photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts light in a visible light region, the other photoelectric conversion region photoelectrically converts light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.

Solid-state imaging apparatus and electronic apparatus

There is provided a resonator structure that obtains a highly accurate optical spectrum. The resonator structure includes a stacked structure that includes a semiconductor layer, a first resonator, a first reflection layer, a second resonator, a second reflection layer stacked in this order, allows light of a specific wavelength band to be transmitted therethrough, the semiconductor layer having a first average refractive index, the first resonator having a second average refractive index lower than the first average refractive index, and the first reflection layer having a third average refractive index higher than the second average refractive index.

Resonator structure, imaging element, and electronic apparatus

To provide a filter-based sensor capable of enhancing reliability and image quality. There is provided a solid-state imaging device including pillar structures, a filter element, a semiconductor substrate, and a photoelectric conversion element formed in the semiconductor substrate, in which the pillar structures are disposed above the semiconductor substrate in a cross-sectional view and the filter element is disposed between the semiconductor substrate and the pillar structures, and the pillar structures are configured to change a direction of an incident light.

Solid-state imaging device and electronic apparatus

An image forming apparatus includes a photosensitive drum, a development roller configured to supply developer to the photosensitive drum, a transfer roller configured to transfer a developer image formed on the photosensitive drum to a recording material, and a cleaning roller being in contact with the photosensitive drum, configured to clean a part of the recording material adhered to the photosensitive drum, wherein the diameter of the transfer roller is greater than the diameter of the development roller and the diameter of the cleaning roller is greater than the diameter of the development roller.

Image forming apparatus

The present disclosure relates to a solid-state imaging device that can achieve a high S/N ratio at a high sensitivity level without any decrease in resolution, and to an electronic apparatus. In the upper layer, the respective pixels of a photoelectric conversion unit that absorbs light of a first wavelength are tilted at approximately 45 degrees with respect to a square pixel array, and are two-dimensionally arranged in horizontal directions and vertical directions in an oblique array. The respective pixels of a photoelectric conversion unit that is sensitive to light of a second or third wavelength are arranged under the first photoelectric conversion unit. That is, pixels that are √{square root over (2)} times as large in size (twice as large in area) and are rotated 45 degrees are arranged in an oblique array. The present disclosure can be applied to solid-state imaging devices that are used in imaging apparatuses, for example.

Solid-state imaging device with organic photoelectric conversion film over photodiodes

Provided is an electronic device that includes a plurality of pixels, each of at least two pixels of the plurality of pixels includes a first lens that collects incident light, a first light shielding film portion having a first hole through which a part of the incident light that has been collected passes, and a photoelectric conversion unit that converts the incident light having passed through the first hole. A shape of the first hole with respect to the first light shielding film portion is different between a first pixel among the at least two pixels and a second pixel different from the first pixel among the at least two pixels.

Electronic device

A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.

Spectral performance in a wide wavelength range is improved. A solid-state imaging device according to an embodiment includes: a pixel array unit in which a plurality of photoelectric conversion elements (PD) are arranged in a two-dimensional lattice form; a plurality of diffraction gratings provided corresponding one-to-one to light-receiving surfaces of the plurality of photoelectric conversion elements; and pixel circuits configured to generate pixel signals on the basis of charge accumulated in the photoelectric conversion elements, wherein a period of a first diffraction grating positioned at a first imaging height is different from a period of a second diffraction grating positioned at a second imaging height different from the first imaging height.

A ripple is suppressed in a solid-state imaging element that obtains a spectral spectrum. The solid-state imaging element includes a surface layer, a filter layer, and a photoelectric conversion layer. In the solid-state imaging element, the surface layer has a thickness exceeding a half of a coherence length of incident light. Furthermore, in the solid-state imaging element, the filter layer transmits predetermined target light of the incident light transmitted through the surface layer and reflects a rest of the incident light transmitted through the surface layer to the surface layer. Furthermore, in the solid-state imaging element, the photoelectric conversion layer photoelectrically converts the predetermined target light transmitted through the filter layer.

Solid-state imaging element, electronic device, and method of manufacturing electronic device

Provided is an imaging device including a light source that radiates light in at least two different wavelength bands and an imaging element that acquires signals individually from the light in the two different wavelength bands. The two different wavelength bands include a first wavelength band from 400 to 580 nm for use in dermatoglyphic pattern authentication, and a second wavelength band of 650 nm or more mainly including near-infrared rays for use in vein authentication.

Imaging device

A sheet bonding apparatus includes an electrophotographic unit configured to apply powder adhesive on a sheet by an electrophotographic process, a folding portion configured to fold the sheet on which the powder adhesive has been applied by the electrophotographic unit, and a bonding portion configured to heat the sheet folded by the folding portion to bond the sheet by the powder adhesive, wherein the bonding portion and the folding portion are disposed over the electrophotographic unit.

Sheet bonding apparatus

To improve detection efficiency in a solid-state imaging element including a SPAD in which an electrode and wiring are placed in a central portion. A solid-state imaging element includes a photodiode and a light collecting section. The photodiode includes a light receiving surface and an electrode placed on the light receiving surface, and that outputs an electrical signal in accordance with light incident on the light receiving surface in a state where a voltage exceeding a breakdown voltage is applied to the electrode. The light collecting section causes light from a subject to be collected in the light receiving surface other than a region where the electrode is placed.

Solid-state imaging element and imaging device with avalanche photodiode

Growing community of inventors

Kanagawa, Japan

Atsushi Toda