Canon Kabushiki Kaisha

Fujitsu Corporation

Fujifilm Corporation

Nikon Corporation

Hitachi, Ltd.

Matsushita Electric Industrial Co., Ltd.

Tokyo Shibaura Denki Kabushiki Kaisha

Teijin Limited

Kabushiki Kaisha Toshiba

Mitsubishi Denki Kabushiki Kaisha

Panasonic Corporation

Ebara Corporation

Showa Denko K.k.

Nippon Zeon Company, Ltd.

Nec Platforms, Ltd.

Atsushi Tanaka

Katsuyuki Kobayashi

Yuichiro Yoshimura

Ryozo Yanagisawa

Hajime Sato

Masaki Tokioka

Tsunenori Ashibe

Takashi Kusaba

Akihiko Nakazawa

Kiyoshi Kaneko

Hiroyuki Kobayashi

Yutaka Shimizu

Hidekazu Matsuda

Masayuki Suzuki

Shinnosuke Taniishi

Keiichi Nagasaka

Akira Shimada

Masahide Hasegawa

Kiwamu Kobayashi

Masashi Ono

Masahiro Takata

Yuji Sakurai

Yoshihiko Seyama

Shigeki Mori

Minoru Shimojo

Hitoshi Kishi

Masaaki Kanashiki

Takeshi Kamono

Reiko Kondo

Kenichi Umeda

Shin Eguchi

Kohei Higashi

Noriyuki Suzuki

Akihide Otonari

Takuya Uzumaki

Hirotaka Oshima

Syuuichi Murata

Eisaku Tatsumi

Makoto Kikuchi

Nobuo Kamehara

Koichi Niwa

Fumihiko Mochizuki

Junya Ikeda

Hiroyuki Osada

Masaki Sato

Kazuo Kobayashi

Chikayoshi Kamata

Masakazu Sekiguchi

Toshihisa Tanaka

Ryota Kashiwabara

Toru Miyakoshi

Michiyo Ogawa

Takeshi Hama

Chiori Saito

Kazuhiro Matsubayashi

Masashige Sato

Hitoshi Kanai

Tsuyoshi Watanabe

Katsuhiko Nagasaki

Hiroto Takeshita

Takahiko Sugawara

Masahisa Mimura

Mitsuru Otagiri

Shinji Nojima

Shugo Horikami

Yuko Miyake

Akio Uesugi

Hitoshi Kato

Kazuhisa Obuchi

Tatsuya Shimoda

Kazuyuki Kazami

Hiroyuki Hirai

Minoru Nakamura

Masakazu Taguchi

Hiroshi Yoshida

Shinichi Miyazaki

Hisashi Takayama

Takatoshi Tsujimura

Katsuhiro Kohda

Kazunori Yamanaka

Koichi Nishimura

Masaya Nakayama

Hiroshi Sunagawa

Hiroyoshi Kodama

Katsuhisa Miyata

Kazutoshi Shimada

Toshiro Takahashi

Hideyuki Motoyama

Shinya Ono

Takeshi Inoue

Shinichi Sunakawa

Hayashi Ito

Kenichi Oyamada

Toshio Sugimoto

Mineo Moribe

Hirofumi Nagasuka

Wataru Yamagishi

Akino Inoue

Takeaki Sugimura

Hiroshi Takekawa

Provided are a method for producing indium tin oxide particles and a method for producing a curable composition, the methods including a step of obtaining a precursor solution including indium and tin by heating indium acetate and tin acetate in a solvent including a carboxylic acid and having 6 to 20 carbon atoms, and a step of obtaining a reaction solution including indium tin oxide particles by dropwise adding the obtained precursor solution to a solvent having a hydroxy group and having 14 to 22 carbon atoms, which has a temperature of 230° C. to 320° C., in which an acetic acid concentration in the precursor solution is in a range of 0.5% by mass to 6% by mass.

Method for producing indium tin oxide particles and method for producing curable composition

A semiconductor film includes a cluster of semiconductor quantum dots each having a metal atom and ligands coordinating to respective semiconductor quantum dots, and the semiconductor quantum dots have an average shortest inter-dot distance of less than 0.45 nm. A solar cell, a light-emitting diode, a thin film transistor, and an electronic device include the semiconductor film.

Semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device

Provided is a convenient display device including: a display unit capable of projecting a projection image on a domain in accordance with a position of a user; and a judgment unit that judges whether the projection image can be projected on the domain.

Display device and projection device

A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and a ligand that is coordinated to the semiconductor quantum dots and that is represented by the following Formula (A): wherein, in Formula (A), Xrepresents NH, S, or O; each of Xand Xindependently represents NH, SH, or OH; and each of n and m independently represents an integer from 1 to 3.

Semiconductor film, method of producing semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device

The present invention addresses the problem of providing an output device, which can reduce the impact on an object to which power is supplied even when an output unit continuously fails to supply a voltage. To solve the problem a brake mechanism includes a contact member and a variable unit. The contact member may be brought into contact with a read head that reads information recorded as an information stream stored in a medium that moves relative to the read head. The variable unit changes a contact state between the contact member and the read head when the information representing the displacement between the position on the medium read by the read head and the position in the recorded information stream exceeds a prescribed range.

Brake device

There is provided a semiconductor film, including: an aggregate of oxide microparticles including at least one type of metal selected from the group consisting of In, Zn, and Sn; and at least one type of a ligand which is selected from the group consisting of a ligand expressed by General Formula (A) below, a ligand expressed by General Formula (B) below, and a ligand expressed by General Formula (C) below and which is coordinated with the oxide microparticles: in which, in General Formula (A), each of Xand Xindependently represents &#x2014;SH, &#x2014;NH, &#x2014;OH, or &#x2014;COOH, and each of Aand Bindependently represents a hydrogen atom or a substituent having an atomic number of 1 to 10, in which, in General Formula (B), each of Xand Xindependently represents &#x2014;SH, &#x2014;NH, &#x2014;OH, or &#x2014;COOH and each of Aand Bindependently represents a hydrogen atom or a substituent having an atomic number of 1 to 10, and in which, in General Formula (C), Xrepresents &#x2014;SH, &#x2014;NH, or &#x2014;OH, and Arepresents a hydrogen atom or a substituent having an atomic number of 1 to 10.

Semiconductor film, oxide microparticle dispersion, method for manufacturing semiconductor film, and thin film transistor

An information storage device is a device that communicates over a network with another device that is used by another user different from an own user who uses an own device, and includes a storage unit including a first storage area available to the own user and a second storage area available to the other user, an information output unit that outputs information of the own user stored in the first storage area to the other device over the network, an information writing unit that stores information of the other user output by the other device over the network, in the second storage area, and a use control unit that controls whether the second storage area is available to the own user on the basis of an instruction of the other user.

Information storage device, information storage system, and information storage control program

A non-transitory computer-readable recoding medium having stored therein a program for causing a computer to execute a process. The process includes permitting specifying of devices that are made to belong to a device group to which a particular command template for instructing execution of a particular function is applied, over a plurality of types of devices, receiving specifying of a device that is to belong to the device group and specifying of the particular function that the device is made to perform, and generating a command that is applied to a device group to which the specified device belongs and that is used for controlling the specified device on the basis of a particular command template for performing the particular function.

Computer-readable recording medium, command generation method and information processing apparatus

A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and at least one ligand that is coordinated to the semiconductor quantum dots and that is selected from a ligand represented by Formula (A), a ligand represented by Formula (B), and a ligand represented by Formula (C): wherein, in Formula (A), Xrepresents &#x2014;SH, &#x2014;NH, or &#x2014;OH; and each of Aand Bindependently represents a hydrogen atom or a substituent having from 1 to 10 atoms; provided that when Aand Bare both hydrogen atoms, Xrepresents &#x2014;SH or &#x2014;OH; in Formula (B), Xrepresents &#x2014;SH, &#x2014;NH, or &#x2014;OH; and each of Aand Bindependently represents a hydrogen atom or a substituent having from 1 to 10 atoms; and in Formula (C), Arepresents a hydrogen atom or a substituent having from 1 to 10 atoms.

A metal oxide thin film according to the present invention has a peak which is attributed to 1s electrons of nitrogen in a binding energy range of 402 eV to 405 eV in an XPS spectrum obtained by X-ray photoelectron spectroscopy, in which peak areas, which are obtained by separation of peaks having a peak energy of a metal-oxygen bond attributed to 1s electrons of oxygen, satisfy the following expression.0.9&#x3c;&#x2003;&#x2003;(1)(D represents a peak area of a component having a peak position in a binding energy range of 529 eV or higher and lower than 531 eV, and E represents a peak area of a component having a peak position in a binding energy range of 531 eV to 532 eV.)

Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method

A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by InGaZnO, the second region being represented by InGaZnO, and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.

Method of producing thin film transistor, thin film transistor, display device, image sensor, and X-ray sensor

A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and In, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cmto 1520 cmin an infrared absorption spectrum obtained by performing a measurement by Fourier transform infrared spectroscopy is divided into an infrared wave number range of from 1380 cmto 1450 cmand an infrared wave number range of from more than 1450 cmto 1520 cm, a peak positioned within the infrared wave number range of from 1380 cmto 1450 cmexhibits the maximum value in the infrared absorption spectrum within an infrared wave number range of from 1350 cmto 1750 cm; and a post-treatment process of removing the organic component remaining in the second oxide precursor film, to transform the second oxide precursor film into an amorphous oxide thin film containing In.

Method for producing amorphous oxide thin film and thin film transistor

Provided is a metal oxide film, including a component having a peak position, in an XPS spectrum thereof, within a range corresponding to a binding energy of from 402 eV to 405 eV, the metal oxide film satisfying a relationship represented by Equation (1): A/(A+B)&#x2267;0.39, when an intensity of peak energy attributed to nitrogen 1s electron is obtained by peak separation, and a manufacturing method of the same, an oxide semiconductor film, a thin-film transistor, a display apparatus, an image sensor, and an X-ray sensor. In Equation (1), A represents a peak area of the component having a peak position within a range corresponding to a binding energy of from 402 eV to 405 eV, and B represents a peak area of a component having a peak position within a range corresponding to a binding energy of from 406 eV to 408 eV.

Metal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and X-ray sensor

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Kawasaki, Japan

Atsushi Tanaka