Dai Nippon Insatsu Kabushiki Kaisha

Dai Nippon Printing Co., Ltd.

Tokico, Ltd.

Atsushi Takano

Mineo M Yamauchi

Masanori Akada

Masanori Saito

Masaki M Kutsukake

Yoshikazu Ito

Hideichiro Takeda

Minoru Utsumi

Hiroyuki Obata

Mitsuru Takeda

Takashi Aono

Kazuo Umeda

Hitoshi Fujii

Hideaki Ishii

Youichi Kumemura

Masaaki Asano

Kazuo Takahashi

Masayuki Iijima

Osamu Sasaki

A disc brake includes a carrier with an inner beam secured to a knuckle, a pair of in board and outboard brake pad assemblies located on opposite sides of a rotor and slideably supported on the carrier, and a caliper extending over the periphery of the rotor and axially moved to urge the in board and outboard brake pad assemblies into frictional engagement with the opposite sides of the rotor. The carrier is constructed so that the difference in natural frequency between a bending mode and a torsion mode is at least 300 Hz. The carrier has a moment of inertia of area/polar moment of inertia of area ratio of at least 0.75.

Disc brake

A high-resistance compound semiconductor 12 is epitaxially grown on a low-resistance compound semiconductor 11 and a dielectric reflecting film 13 is formed thereon, thereby forming a monolithic sensor 10. As the low-resistance compound semiconductor 11, a compound semiconductor is used which has a large bandgap so as to enable probe light to pass therethrough without being absorbed and which has a lattice constant and a thermal expansion coefficient, which are close to those of the high-resistance compound semiconductor. In addition, since the low-resistance compound semiconductor 11 also serves as an electrode, a compound semiconductor which has a resistivity of 10.sup.+1 .OMEGA.cm or less is used. Since the shorter the wavelength of the probe light used, the larger the retardation change and the larger the signal output, a compound semiconductor which has a large bandgap is used as the high-resistance compound semiconductor 12 so that light of short wavelength can be used. The high-resistance compound semiconductor 12 is also required to have a large electrooptic constant and a resistivity of 10.sup.5 .OMEGA.cm or more.

Potential sensor employing electrooptic crystal and potential measuring

Moving image pickup device, medium for picking up moving images and

A heat transfer sheet having a heat transfer layer on one surface of a base sheet, said heat transfer layer being formed of a material containing a dye substantially dissolved in a binder with a weight ratio of the dye to the binder (dye/binder ratio) of 0.3 or more, and said base sheet having a heat-resistant slipping layer provided on the surface on which the heat transfer layer is not provided. A heat transferable sheet to be used in combination with the heat transfer sheet, comprising a receptive sheet having (a) a base sheet and (b) a receptive layer for receiving the dye migrated from the above-mentioned heat transfer sheet on heating, said receptive sheet having an intermediate layer provided between the base sheet and the receptive layer.

Image-receiving sheet

Heat transfer sheet

Draw type optical recording medium

Sheet for heat transference

A heat transfer sheet having a heat transfer layer on one surface of a base sheet, said heat transfer layer being formed of a material containing a dye substantially dissolved in a binder with a weight ratio of the dye to the binder (dye/binder ratio) of 0.3 or more, and said base sheet having a beat-resistant slipping layer provided on the surface on which the heat transfer layer is not provided. A heat transferable sheet to be used in combination with the heat transfer sheet, comprising a receptive sheet having (a) a base sheet and (b) a receptive layer for receiving the dye migrated from the above-mentioned heat transfer sheet on heating, said receptive sheet having an intermediate layer provided between the base sheet and the receptive layer.

Sheet for heat transference and method for using the same

Growing community of inventors

Tokyo, Japan

Atsushi Takano