Sony Corporation

Sony Semiconductor Solutions Corporation

Fuji Xerox Co., Ltd.

Honda Giken Kogyo Kabushiki Kaisha

Canon Kabushiki Kaisha

Sony Electronics Inc

Other

Nissan Motor Company Limited

Renesas Electronics Corporation

Sony Group Corporation

Fuji Zerox Co., Ltd.

Atsushi Suzuki

Naoki Kawazu

Takumi Oka

Yuichi Motohashi

Kunichi Yamashita

Junichiro Azami

Ken Hashimoto

Toshitake Yui

Nobuyuki Ichizawa

Nobutaka Shimamura

Motohashi Yuichi

Yosuke Ueno

Ken Koseki

Toshiaki Nagai

Motonobu Torii

Kazuya Sakamoto

Noriyuki Fukushima

Keita Sasaki

Masayoshi Kai

Nobumasa Hamazoe

Yoshiro Yamashita

Yorito Sakano

Yukihiro Yasui

Shinji Kazama

Toshihiko Suzuki

Yoshinori Muramatsu

Yoshikazu Nitta

Takatsugu Doi

Kazuhiko Tokunaga

Akihide Kashiwagi

Takashi Tamura

Takanori Saeki

Takashi Shoji

Isao Hirota

Takanori Yamashita

Tomohiro Takahashi

Hayato Wakabayashi

Shinichi Hirano

Masaaki Takizawa

Hiroshi Takano

Takayuki Toyama

Shigeharu Kondo

Toru Matsunaga

Norihiro Nikai

Yuuki Yamagata

Masaki Murozuka

Takashi Otani

Akira Urai

Takanori Watanabe

Kazuo Yamazaki

Hiroshi Inoue

Hideki Kimura

Masahiro Baba

Yusuke Oike

Hideaki Takada

Koichiro Iwata

Shizunori Matsumoto

Satoshi Yamamoto

Atsumi Niwa

Yusuke Ikeda

Shinji Tanaka

Tsutomu Imoto

Masatoshi Hayakawa

Takahiro Miura

Ryosuke Nakamura

Kiyotaka Tabuchi

Junichi Honda

Yoshito Ikeda

Kei Nakagawa

Takuya Maruyama

Yohei Chiba

Eisuke Hiraoka

Rei Yoshikawa

Tatsuo Kumura

Shinichirou Etou

Kenichi Takamiya

Toyotaka Kataoka

Naoto Kojima

Akio Mishima

Akihiko Chujo

Kiyotaka Amano

Yasuharu Endo

Akira Ohtani

Satoko Iida

Chihiro Okada

Yasutoshi Aibara

Masahiro Nakamura

Masao Nitta

Takashi Idegomori

Hiromu Kato

Akira Noda

Yoshihiko Inoue

Katsumi Kakamu

Hitoshi Kojima

Fusashige Tokutake

Katsumi Honda

Keiji Yamaguchi

Kyoko Horii

Takaki Watanabe

Tatsuya Ichikawa

There is provided a solid-state imaging device having a configuration suitable for high integration. The solid-state imaging device includes a semiconductor layer, a photoelectric converter, a storage capacitor, and a first transistor. The photoelectric converter is provided in the semiconductor layer, and generates an electric charge corresponding to a received light amount by photoelectric conversion. The storage capacitor is provided on the semiconductor layer, and includes a first insulating film having a first electrical film thickness. The first transistor is provided on the semiconductor layer, and includes a second insulating film having a second electrical film thickness larger than the first electrical film thickness.

Solid-state imaging device and electronic apparatus having a storage capacitor with a thin insulating film

Provided is an imaging device with low noise and a high dynamic range. An imaging device includes: a conversion unit that converts an incident electromagnetic wave into a charge; a first capacitor that accumulates the charge when a voltage corresponding to the charge is equal to or lower than a predetermined threshold; a second capacitor that accumulates the charge when the voltage exceeds the threshold; a voltage conversion circuit that converts the charges accumulated in the first capacitor and the second capacitor into voltages; a first storage unit that stores a voltage corresponding to the accumulated charge in the first capacitor after a lapse of a first period since the first capacitor has started accumulating the charge; and a second storage unit that stores a voltage corresponding to the accumulated charges in the first capacitor and the second capacitor after a lapse of a second period longer than the first period since the first capacitor has started accumulating the charge.

Imaging device

Power consumption is reduced in an analog-to-digital conversion circuit using a TDC. The analog-to-digital conversion circuit includes a comparator, a counter, a time-to-digital converter, and a holding unit. The comparator compares an analog signal with a predetermined reference signal and outputs a comparison result. The counter counts a predetermined count value and outputs a bit string indicating the count value. The time-to-digital converter converts, into a digital signal, a time from when the comparison result is inverted until a least significant bit of the bit string reaches a predetermined value. The holding unit holds the bit string of when the comparison result is inverted.

Analog-to-digital conversion circuit, solid-state image sensor, and method for controlling analog-to-digital conversion circuit

An imaging system according to the present disclosure includes: an imaging device that is mounted in a vehicle, and captures and generates an image of a peripheral region of the vehicle; and a processing device that is mounted in the vehicle, and executes processing related to a function of controlling the vehicle on the basis of the image. The imaging device includes: a first control line, a first voltage generator that applies a first voltage to the first control line, a first signal line, a plurality of pixels that applies a pixel voltage to the first signal line, a first dummy pixel that applies a voltage corresponding to the first voltage of the first control line to the first signal line in a first period, a converter including a first converter that performs AD conversion on the basis of a voltage of the first signal line in the first period to generate a first digital code, and a diagnosis section that performs diagnosis processing on the basis of the first digital code. The above-described processing device restricts the function of controlling the vehicle on the basis of a result of the diagnosis processing.

Imaging system and imaging device

The present disclosure relates to an imaging apparatus and an imaging method, a camera module, and an electronic apparatus that are capable of detecting a failure in an imaging device having a structure in which a plurality of substrates are stacked. The timing at which a row drive unit provided in a second substrate outputs a control signal for controlling accumulation and reading of pixel signals in a pixel array provided in a first substrate is compared with the timing at which the control signal output from the row drive unit is detected after passing through the pixel array. Depending on whether or not the timings coincides with each other, a failure is detected. The present disclosure can be applied to an imaging apparatus mounted on a vehicle.

Imaging apparatus and imaging method, camera module, and electronic apparatus capable of detecting a failure in a structure in which substrates are stacked

Provided is an imaging device that includes an imaging unit that performs an imaging operation, a data generator that generates first power supply voltage data corresponding to a first power supply voltage and a flag generation section that generates a flag signal for the first power supply voltage by comparing the first power supply voltage data and first reference data. The first power supply voltage is supplied to the imaging unit.

Imaging device, imaging system, and imaging method

An imaging device capable of reporting more reliably an occurrence of trouble is provided. The imaging device of the present disclosure includes an imaging sensor configured to generate image data, a diagnosis circuit configured to perform diagnosis processing for the imaging sensor and an output circuit configured to output a flag signal corresponding to a result of the diagnosis processing, wherein the flag signal is set to a ground level signal in response to the result of the diagnosis processing indicating an error.

Imaging device and imaging system

Suppressing a dead period at the time of mode switching. A solid-state imaging device includes: a plurality of pixels () that each outputs a luminance change of incident light; and a detection circuit () that outputs an event signal based on the luminance change output from each of the pixels, in which each of the pixels includes: a photoelectric conversion element () that generates a charge according to an incident light amount; a logarithmic conversion circuit () that is connected to the photoelectric conversion element and converts a photocurrent flowing out of the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; and a first transistor () having a drain connected to a sense node of the logarithmic conversion circuit.

Solid-state imaging device with transistor drain connected to sense node of logarithmic conversion circuit

Accuracy of results obtained by integrally processing information acquired by different sensors is improved. A solid-state imaging device according to an embodiment includes: a first sensor that detects light in a first wavelength band; and a second sensor that detects light of a second wavelength band different from the first wavelength band, in which the first sensor includes a first pixel () that detects light of the first wavelength band in incident light, and the second sensor includes a second pixel () that detects light in the second wavelength band that has transmitted through the first pixel among the incident light.

Solid-state imaging device and electronic apparatus

The present technology relates to an image pickup element, a control method, and an image pickup device which realize easier and more diversified data output. In one aspect of the present technology, a plurality of signal lines for transmitting a pixel signal read from a pixel is allocated to each column, and different reading modes of the pixel signals are respectively allocated to the signal lines of each column. Regarding each column of the pixel array connected to the pixel corresponding to the mode, the pixel signal is read from the pixel connected to the signal line corresponding to the reading mode of the pixel signal in the mode, and the read pixel signal is transmitted via the signal line. The present technology is applied to, for example, an image pickup element and an image pickup device.

Image pickup element, control method, and image pickup device

An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

Image sensor and imaging device

An imaging device includes an imaging unit that generates image data on the basis of a first power voltage, an image processing unit that performs image processing on the image data on the basis of a second power voltage, a reference voltage generating unit that generates a first reference voltage on the basis of the first power voltage and a first flag generating unit that generates a first flag signal for the second power voltage on the basis of a comparison of the second power voltage and the first reference voltage and configured to output the first flag signal.

Growing community of inventors

Kanagawa, Japan

Atsushi Suzuki