Sandisk Technologies Inc.

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Energy Co., Ltd.

Atsushi Suyama

Atsushi Shimizu

Henry Chien

Toshiya Iwasaki

Ming Tian

Raghuveer S Makala

James K Kai

Dana Lee

Jayavel Pachamuthu

Tuan Duc Pham

Henry Chin

Vinod Robert Purayath

Takashi Whitney Orimoto

Kensuke Yamaguchi

Marika Gunji-Yoneoka

Johann Alsmeier

Hiroyuki Ogawa

Rahul Sharangpani

Hiroyuki Kinoshita

Yao-Sheng Lee

Murshed Chowdhury

Kiyohiko Sakakibara

Naoki Takeguchi

Jongsun Sel

Hirotsugu Murashima

Hiro Kinoshita

Hiroaki Iuchi

Shigehisa Inoue

Ryoichi Honma

Masanori Terahara

Tomoyuki Obu

Junpei Ito

Jun Yamasaki

Chan Park

Hirofumi Watatani

Daewung Kang

Tsuyoshi Hada

Yosuke Tanida

Frank Yu

Jiao Chen

Luckshitha Suriyasena Liyanage

Keitaro Taniguchi

A battery pack includes a current detector configured to detect a charging current to secondary battery, a drive circuit configured to drives a charge switch based on the charging current detected by the current detector, a charge controller configured to control operation of the charge switch by the drive circuit, a monitoring unit configured to monitor operation of charge controller, and a judging unit configured to instruct, based on the charge controller and the monitoring unit, the charge switch to be able to or unable to operate.

Battery pack, and abnormality monitoring method for same

An alternating stack of insulating layers and spacer material layers is formed over a semiconductor substrate. Memory openings are formed through the alternating stack. An optional silicon-containing epitaxial pedestal and a memory film are formed in each memory opening. After forming an opening through a bottom portion of the memory film within each memory opening, a germanium-containing semiconductor layer and a dielectric layer is formed in each memory opening. Employing the memory film and the dielectric layer as a crucible, a liquid phase epitaxy anneal is performed to convert the germanium-containing semiconductor layer into a germanium-containing epitaxial channel layer. A dielectric core and a drain region can be formed over the dielectric layer. The germanium-containing epitaxial channel layer is single crystalline, and can provide a higher charge carrier mobility than a polysilicon channel.

Three-dimensional memory device having epitaxial germanium-containing vertical channel and method of making thereof

[Problem] To provide a power supply system which effectively utilizes a power storage unit and also limits degradation of the power storage unit. [Solution] A power supply system () is provided with: a power storage unit () for charging supplied electric power and supplying the charged electric power by means of discharge; and a power storage unit controller () for controlling the discharging of the power storage unit (). The power storage unit controller () sets a discharge period during which the power storage unit () can be discharged. Furthermore, during the discharge period, the power storage unit controller () determines the electric energy to be supplied by means of the discharging of the power storage unit () during the remaining discharge period on the basis of the remaining discharge period and the electric energy that can be discharged by the power storage unit ().

Power supply system

Undesirable metal contamination from a selective metal deposition process can be minimized or eliminated by employing a first material layer on a bevel and a back side of a substrate, while providing a second material layer only on a front side of the substrate. The first material layer and the second material layer are selected such that a selective deposition process of a metal material provides a metal material portion only on the second material layer, while no deposition occurs on the first material layer or isolated islands of the metal material are formed on the first material layer. Any residual metal material can be removed from the bevel and the back side by a wet etch to reduce or prevent metal contamination from the deposited metal material.

Method of selectively depositing floating gate material in a memory device

There is provided a power supply system in which a user can easily determine an optimum method of consuming power obtained by discharging a power storage portion. The power supply system () includes: a power storage portion () that supplies a power by discharge; a dischargeable time prediction portion () that predicts, when a power is supplied to a predetermined load among a plurality of loads included in the load portion (), a dischargeable time that is a time period in which the power storage portion () can perform discharge; and a notification portion () that notifies a user of the dischargeable time predicted by the dischargeable time prediction portion (). The dischargeable time prediction portion () predicts a plurality of dischargeable times in which combinations of loads receiving power supply are different and the notification portion () notifies the dischargeable times.

An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. After formation of a memory opening, all surfaces of the memory opening are provided as silicon oxide surfaces by formation of at least one silicon oxide portion. A silicon nitride layer is formed in the memory opening. After formation of a memory stack structure, backside recesses can be formed employing the silicon oxide portions as an etch stop. The silicon oxide portions can be subsequently removed employing the silicon nitride layer as an etch stop. Physically exposed portions of the silicon nitride layer can be removed selective to the memory stack structure. Damage to the outer layer of the memory stack structure can be minimized or eliminated by successive use of etch stop structures. Electrically conductive layers can be subsequently formed in the backside recesses.

Blocking oxide in memory opening integration scheme for three-dimensional memory structure

[Problem] To provide a charging system that levels the amount of grid power that is used, and that is capable of reducing power rates, even if charging has been frequently conducted without limiting the time zones in which charging is conducted. [Solution] A charging system is provided with: a storage unit that is charged by consuming grid power supplied by a power company, and that supplies the stored power through discharge; and a charging unit that charges batteries by consuming power supplied by grid power and the storage unit. Power companies set a power rate that is higher the greater the maximum value of the amount of power supplied for each unit of time is. Furthermore, at least a single charge carried out by the charging unit is carried out over two units of time, and the storage unit supplies power to the charging unit in at least one unit of time other than said two units of time.

Charging system

A power supply system is provided that can reduce the maximum value of the amount of power per unit time supplied to a load and a power storage portion and that can increase the amount of power stored in the power storage portion. The power supply system () includes the power storage portion () and a charge-discharge control portion () that controls the charge and discharge of the power storage portion (). The power supply system () supplies power to an EV charge portion () that is one of power storage portions (). The charge-discharge control portion () charges the power storage portion () when a power or a current consumed by the EV charge portion () is equal to or less than a predetermined magnitude.

Power supply system with controlled power storage

Disclosed is a power supply device which acquires data of the amount of environmental load material emitted from a power supply, and controls operations on the basis of the data.

Power supply device, power storage device, and power control device

A stack can be patterned by a first etch process to form an opening defining sidewall surfaces of a patterned material stack. A masking layer can be non-conformally deposited on sidewalls of an upper portion of the patterned material stack, while not being deposited on sidewalls of a lower portion of the patterned material stack. The sidewalls of a lower portion of the opening can be laterally recessed employing a second etch process, which can include an isotropic etch component. The sidewalls of the upper portion of the opening can protrude inward toward the opening to form an overhang over the sidewalls of the lower portion of the opening. The overhang can be employed to form useful structures such as an negative offset profile in a floating gate device or vertically aligned control gate electrodes for vertical memory devices.

Method of forming an active area with floating gate negative offset profile in FG NAND memory

Non-voltage storage and techniques for fabricating non-volatile storage are disclosed. In some embodiments, at least a portion of the control gates of non-volatile storage elements are formed from p-type polysilicon. In one embodiment, a lower portion of the control gate is p-type polysilicon. The upper portion of the control gate could be p-type polysilicon, n-type polysilicon, metal, metal nitride, etc. P-type polysilicon in the control gate may not deplete even at high Vpgm. Therefore, a number of problems that could occur if the control gate depleted are mitigated. For example, a memory cell having a control gate that is at least partially p-type polysilicon might be programmed with a lower Vpgm than a memory cell formed from n-type polysilicon.

P-type control gate in non-volatile storage

P-type control gate in non-volatile storage and methods for forming same

Growing community of inventors

Osaka, Japan

Atsushi Suyama