Hamamatsu-photonics K.k.

Atsushi Sugiyama

Tadataka Edamura

Naota Akikusa

Takahide Ochiai

Kazuue Fujita

Tatsuo Dougakiuchi

Kousuke Shibata

Akio Ito

Masahiro Hitaka

Shinichi Furuta

A semiconductor laser element includes: a semiconductor substrate; a semiconductor laminate; a first electrode in which a ridge portion of the semiconductor laminate is embedded; and a second electrode. A first region of a side surface of the first electrode is separated from a first end surface in such a manner to extend away from the first end surface as the first region extends away from the ridge portion to both sides. A shortest distance between a first side surface and the first region is smaller than each of a shortest distance between a third side surface and a third region and a shortest distance between a fourth side surface and a fourth region. The first region does not include a corner in a range satisfying D≤Sand D≤S.

Semiconductor laser element, semiconductor laser device, and method for manufacturing semiconductor laser element

The laser module includes a QCL element, a diffraction grating unit, a first lens holder, a second lens holder, and a mount member. The fourth mounting portion of the mount member is provided with a placement hole into which the protruding portion of the diffraction grating unit is inserted. The placement hole is longer than the protruding portion so that the protruding portion can be slid in the X-axis direction relative to the placement hole. A wall surface for positioning the diffraction grating unit is provided between the third mounting portion and the fourth mounting portion. The diffraction grating unit includes a positioning surface facing the wall surface. The diffraction grating unit is fixed to the fourth mounting portion in a state where the protruding portion is inserted into the placement hole and the positioning surface is in surface contact with the wall surface.

External resonant laser module and method of manufacturing external resonant laser module

An external resonance-type laser module includes: a quantum cascade laser; a MEMS diffraction grating including a movable portion capable of swinging around an axis and a diffraction grating portion formed on the movable portion; a lens; a magnet; and a yoke. The MEMS diffraction grating includes a pair of coils respectively disposed on one side and the other side with respect to the axis when viewed in a normal direction parallel to a normal line of the diffraction grating portion, and each of the pair of coils includes an inside part extending along the axis. A recess portion is formed in the magnet, and at least a part of the recess portion overlaps the inside part when viewed in the normal direction.

External resonance-type laser module

The laser module includes a QCL element, a MEMS diffraction grating, a lens holder for holding a lens disposed between the QCL element and the MEMS diffraction grating, and a package. The package includes a bottom wall, a side wall erected on the bottom wall and formed in an annular shape so as to surround a region in which the QCL element is accommodated, and a top wall closing an opening of the side wall on a side opposite to a side where the bottom wall is disposed. The top wall faces the bottom wall in a direction orthogonal to the optical axis direction of the lens, and the distance between the top wall and a surface of the lens holder on a side where the top wall is disposed is smaller than a thickness of the lens holder along the optical axis direction of the lens.

External resonant laser module

The laser module includes a QCL element, a MEMS diffraction grating, a lens holder holding a lens disposed between the QCL element and the MEMS diffraction grating, a package, an electrode terminal disposed along an inner wall surface of the package, and a wire for electrically connecting the electrode terminal and a coil. The top wall of the package faces the bottom wall of the package in a direction orthogonal to the optical axis direction of the lens. The MEMS diffraction grating includes an electrode pad electrically connected to the coil. The electrode pad is connected to the electrode terminal via the wire. A height position of the electrode pad with respect to the bottom wall is equal to or higher than a height position of the electrode terminal with respect to the bottom wall.

A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.

Sintered body, sputtering target, film, quantum cascade laser, and method of film formation

A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×10cm. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 μm or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.

Quantum cascade laser device

A movable diffraction grating includes; a supporting portion; a movable portion which includes a first surface and is swingably connected with the supporting portion; a resin layer which is provided on the first surface and includes a diffraction grating pattern formed therein; a reflection layer which is provided on the resin layer an along the diffraction grating pattern and is formed of metal; and a stress regulation portion inducing stress on the movable portion, and the first surface is caused to bend concavely by stress.

Movable diffraction grating, external-resonator laser module, and manufacturing method for movable diffraction grating

An external resonance type laser module includes a quantum cascade laser, a MEMS diffraction grating configured to include a diffraction/reflection portion configured to diffract and reflect light emitted from the quantum cascade laser and return a part of the light to the quantum cascade laser by swinging the diffraction/reflection portion, and a controller configured to control driving of the quantum cascade laser. The controller is configured to pulse-drive the quantum cascade laser such that pulsed light of a second frequency higher than a first frequency at which the diffraction/reflection portion swings is emitted from the quantum cascade laser and a phase of the pulsed light changes each time the diffraction/reflection portion reciprocates m times (m: an integer of 1 or more).

External resonance type laser module, analysis apparatus, method of driving external resonance type laser module, and non-transitory computer readable medium

A movable diffraction grating includes: a support portion; a movable portion swingably connected to the support portion; a coil buried in the movable portion; a magnetic field generator configured to apply a magnetic field to the coil; an insulation layer provided on a surface of the movable portion; a resin layer provided on the insulation layer and provided with a diffraction grating pattern; and a reflection layer formed of a metal and provided on the resin layer to follow the diffraction grating pattern.

Movable diffraction grating, method of manufacturing the same, and external resonator type laser module

A wavelength variable light source includes a housing, a heat sink disposed in the housing, an excitation light source disposed on the heat sink and configured to output excitation light, a gain medium disposed on the heat sink and including an active layer and a lower DBR, a MEMS mechanism including a movable film facing the gain medium via a gap, disposed on the gain medium, and configured to control the gap, an upper DBR provided in the movable film and configuring a resonator together with the lower DBR, a reflector configured to reflect the excitation light output from the excitation light source toward the gain medium in the housing, and a window formed in the housing and configured to transmit light output from the gain medium.

Wavelength variable light source

A quantum cascade laser manufacturing method includes: a step of pressing a mother stamper against a resin film having flexibility to make a resin stamperhaving a second groove pattern P; a step of making a wafer with an active layer formed on a semiconductor substrate; a step of forming a resist filmon a surface on the active layer side of the wafer; a step of pressing the resin stamper against the resist filmby air pressure to form a third groove pattern Pon the resist film; and a step of etching the wafer with the resist filmserving as a mask to form a diffraction grating on a surface of the wafer.

Quantum cascade laser manufacturing method

A quantum cascade laser includes a semiconductor substrate, and an active layer being provided on the substrate, and having a cascade structure in which quantum well emission layers and injection layers are alternately laminated, and the laser has a base portion including the substrate, and a stripe-shaped ridge portion including the active layer. Further, a reflection control film is formed from a ridge end face over a base end face on an end face in a resonating direction of the laser, and, on the base end face, for a second side and a third side adjacent to a first side on the ridge portion side of the base end face, and a fourth side facing the first side, the reflection control film is formed on a region other than regions near those three sides with predetermined widths.

Quantum cascade laser

A quantum cascade laser includes a semiconductor substrate, and an active layer that is provided on the substrate, and has a cascade structure in which emission layers and injection layers are alternately laminated by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, the active layer generates light by intersubband transition in a quantum well structure. Further, in a laser cavity structure for light with a predetermined wavelength to be generated in the active layer, reflection control films including at least one layer of CeOfilm are formed on a first end face and a second end face facing each other. Thereby, it is possible to realize a quantum cascade laser capable of preferably realizing reflectance control for light within a mid-infrared wavelength region on the laser device end face.

A quantum cascade laser includes a semiconductor substrate, and an active layer that is provided on the substrate, and has a cascade structure in which emission layers and injection layers are alternately laminated by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, and generates light by intersubband transition in a quantum well structure. Further, in a laser cavity structure for light with a predetermined wavelength to be generated in the active layer, CeOinsulating films and reflection control films are formed in order on respective faces of a first end face and a second end face facing each other. Thereby, it is possible to realize a quantum cascade laser capable of preferably realizing reflectance control for light within a mid-infrared region on the laser device end face.

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Hamamatsu, Japan

Atsushi Sugiyama