Canon Kabushiki Kaisha

Atsushi Shiozaki

Isao Kimura

Kenji Hasegawa

Kouichi Touma

Hiroshi Takagi

Koichi Matsuda

Koichi Touma

Koichi Sato

Masahiro Kanai

Kiyofumi Sakaguchi

Masafumi Sano

Kazuaki Masuda

Hirokazu Komuro

Keishi Saito

Toshimitsu Kariya

Hiroto Matsuda

Takaharu Kondo

Hirokazu Ohtoshi

Naoto Okada

Makoto Higashikawa

Shuichiro Sugiyama

Ako Omata

Yuushi Ichinose

Yumi Yoshida

Koichi Toma

An optical absorption layer having a plurality of openings corresponding to lenses is provided between a lens array and a first electrode. An edge of each of the openings is provided such that light entering in a normal direction of a substrate and traveling through an area where the corresponding lens has a maximum inclination angle is blocked.

Display device and image-information processing apparatus equipped with the same

A method includes forming a light absorbing layer, and forming a foundation layer before forming a lens portion such that the foundation layer covers a region where the lens portion is to be formed, wherein the foundation layer is in contact with the light absorbing layer and the lens portion once the lens portion is formed.

Display apparatus and method for manufacturing the same

An organic light-emitting apparatus includes a substrate, a plurality of organic light-emitting devices which are arranged above the substrate and which form a light-emitting section, a circuit section which is disposed around the light-emitting section and which controls the operation of the organic light-emitting devices, a plurality of wiring lines extending between the light-emitting section and the circuit section, and a resin layer which extends in the light-emitting section and which extends from the light-emitting section over the wiring lines. The resin layer has gaps extending between the wiring lines.

Organic light-emitting apparatus with resin layer extending from light-emitting section over wiring lines

A photovoltaic element is provided which has a high conversion efficiency, a low-cost producibility, a light weight and good overall characteristics in a final product form with a transparent protective member. The photovoltaic element comprises a first pin junction comprising an i-type amorphous semiconductor, a second pin junction comprising an i-type microcrystalline semiconductor, and a third pin junction comprising an i-type microcrystalline semiconductor provided in the mentioned order from a light incidence side, wherein at least a transparent protective member and a transparent electrode layer are provided on the light incidence side of the first pin junction, and wherein of the photocurrents generated at the plurality of pin junctions, the photocurrent generated at the third pin junction is the smallest.

Photovoltaic element

The present invention provides a photovoltaic device being capable of generating a large amount of current even with thin joined semiconductor layers, has a high photoelectric conversion efficiency and can be manufactured inexpensively at a low temperature together with a manufacturing method of the same, a photovoltaic device integrated with a building material and a power-generating apparatus. The photovoltaic device is formed by depositing joined semiconductor layers on a substrate, wherein a ratio of projected areas of regions on a surface of the joined semiconductor layers that have heights not smaller than a center value of concavities and convexities to a projected area of the entire surface of the joined semiconductor layers is higher than a ratio of projected areas of regions on the surface of the substrate that have heights not smaller than a center value of concavities and convexities on a surface of the substrate to a projected area of the entire surface of the substrate.

Method of manufacturing a photovoltaic device

A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.

Microcrystalline series photovoltaic element and process for fabrication of same

An ink directly contacts a heating resistor which forms a portion of an electrothermal transducer. The ink is ejected from orifices by using thermal energy generated by supplying an electric current to the heating resistor. The concentration of alkali metal ion is equal to or less than 5&times;10,mol/l.

Ink jet recording method

The present invention provides a photovoltaic device being capable of generating a large amount of current even with thin joined semiconductor layers, has a high photoelectric conversion efficiency and can be manufactured inexpensively at a low temperature together with a manufacturing method of the same, a photovoltaic device integrated with a building material and a power-generating apparatus. The photovoltaic device is formed by depositing joined semiconductor layers on a substrate, wherein a ratio of projected areas of regions on a surface of the joined semiconductor layers that have heights not smaller than a center value of concavities and convexities to a projected area of the entire surface of the joined semiconductor layers is higher than a ratio of projected areas of regions on the surface of the substrate that have heights not smaller than the center value of concavities and convexities on a surface of the substrate to a projected area of the entire surface of the substrate.

Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus

A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions is provided. The semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other. A photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate when no surface material is present, and when present, the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.

Photoelectric conversion element having a surface member or a protection

A deposition method is adapted to deposit a zinc oxide film that has a high light transmittance, an adequate specific electric resistance and a large thickness at a high deposition rate and at low cost in a process that may last long but is stable. The method for depositing a zinc oxide film on a substrate held in an inert gas atmosphere is conducted by magnetron sputtering so that the maximum magnetic flux density in a direction parallel to the surface of the zinc oxide target is held to be not higher than 350 gauss.

Method and apparatus for depositing zinc oxide film and method for

The present invention is to provide a method for producing a photovoltaic element having a reflective layer with high reflectivity and with high reliability and thus showing high photoelectric conversion efficiency, and especially to provide a production method causing no change in the reflection characteristics of a deposited film, even in continuous production on a long substrate for a long period. The production method of a photovoltaic element of the present invention is a method for producing a photovoltaic element having a reflective layer and a semiconductor layer on a long substrate, comprising the steps of supplying an inert gas, hydrogen atoms, and oxygen atoms into a vacuum vessel housing the substrate and effecting sputtering by use of a target comprising aluminum, thereby forming the reflective layer on the substrate.

Method for producing photovoltaic element

The present invention is to provide a production method for a deposit film comprising: a step of forming a reflecting layer on a substrate by opening a film forming chamber to the atmosphere, reducing the pressure of the film forming chamber, heating the film forming chamber to a temperature higher than a predetermined film forming temperature followed by cooling or self-cooling, and setting the film forming chamber at the predetermined film forming temperature, a step of contacting the reflecting layer surface with active oxygen and/or oxygen ion, and a step of forming a transparent conductive layer. According to the present invention, highly reliable reflecting layer and transparent conductive layer having a high reflectance can be stably obtained with a desired texture structure at a low cost.

Production method for deposited film, production method for

There is provided an ink jet head which includes an electrothermal converting body disposed along a pathway of ink, said electrothermal converting body being provided with a heat generating resistor capable of generating, upon energization, heat energy to be directly applied to ink on a heat acting face whereby discharging said ink, characterized in that said heat generating resistor is composed of a material containing at least Ir and other one specific element at the specific respective composition rates or a material containing at least Ir and other two specific elements at the specific respective composition rates, said heat generating resistor constituted by any of said materials being capable of exhibiting a sufficient durability even in the case of driving the ink jet head with a relatively long drive pulse duration.

Substrate for ink jet head, ink jet head provided with said substrate

A method for making a photovoltaic device includes the steps of: (a) forming a transparent conductive layer on a substrate, (b) putting the surface of the transparent conductive layer into contact with an ionized inert gas, and (c) forming a semiconductor layer thereon. The transparent conductive layer is formed such that in the cross-section of the transparent conductive layer, a mean distance between relative minimum points is 2,000 nm or less and a mean tilt angle between a surface line originated from a measuring point and a base line connecting to the nearest two adjacent relative minimum points over the entire measured region is 5.degree. or more.

Photovoltaic device

A photoelectric transducer is provided which comprises a first electrode, a second electrode constituted of an antireflection layer, and a semiconductor layer between the first electrode and the second electrode. The antireflection layer comprises a laminated member of a first tin oxide layer containing a first crystalline oxide of grain size of not larger than 20 nm, and a second thin oxide layer containing a second oxide of a second thin oxide layer containing a second crystalline oxide of grain size of not larger than 20 nm.

Growing community of inventors

Mobara, Japan

Atsushi Shiozaki