Jsr Corporation

Other

Sumitomo Bakelite Company Limited

Axcelis Technologies, Inc.

Atsushi Shiota

Takahiko Kurosawa

Kinji Yamada

Eiji Hayashi

Masahiro Akiyama

Hisashi Nakagawa

Michinori Nishikawa

Manabu Sekiguchi

Kouji Sumiya

Hajime Tsuchiya

Terukazu Kokubo

Keiji Konno

Mutsuhiko Yoshioka

Matthias Patz

Seo Youngsoon

Hiromi Egawa

Akihiro Kojima

Rempei Nakata

Ivan L Berry, Iii

Hideshi Miyajima

Carlo Waldfried

Kohei Goto

Hozumi Sato

Nobuhide Yamada

Makoto Sugiura

Tatsuya Yamanaka

Qingyuan Han

Orlando Escorcia

Toshiyuki Akiike

Kaori Shirato

Seitaro Hattori

Ralph Albano

Tadahiro Shiba

Masako Suzuki

Masahiro Tada

Sumitoshi Asakuma

Youngsoon Seo

A process for producing a polymer includes mixing (A) a polysiloxane compound and (B) a polycarbosilane compound in the presence of a catalyst, water, and an organic solvent, and heating the mixture.

Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same

A method of forming an organic silica film includes forming a coating including a silicon compound having an &#x2014;Si&#x2014;O&#x2014;Si&#x2014; structure and an &#x2014;Si&#x2014;CH&#x2014;Si&#x2014; structure on a substrate, heating the coating, and curing the coating by applying ultraviolet radiation.

Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation

A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): RSi(OR), (2): Si(OR), (3): (R)Si(OR), and (4): R(RO)Si&#x2014;(R)&#x2014;Si(OR)R.

Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device

An insulating-film-forming composition includes: a hydrolysis-condensation product obtained by hydrolyzing and condensing a hydrolyzable-group-containing silane monomer (A) in the presence of a polycarbosilane (B) and a basic catalyst (C); and an organic solvent.

Composition for forming insulating film, method for producing same, silica-based insulating film, and method for forming same

An insulating-film-forming composition including an organic solvent and a hydrolysis-condensation product which is obtained by hydrolysis and condensation of a component (A) in the presence of a component (B).

Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same

A laminate includes a copper wiring layer () provided over a semiconductor layer and having a specific pattern, a protective layer () formed of a polybenzoxazole resin layer provided on the copper wiring layer (), and an insulating layer () provided on the protective layer.

Laminated body and semiconductor device

A method of producing a polymer includes hydrolyzing and condensing a hydrolyzable-group-containing silane monomer (B) in the presence of one or more polycarbosilanes (A), at least one of the polycarbosilanes (A) being a polycarbosilane (I) having a weight average molecular weight of 500 or more and obtained by reacting a compound of the following general formula (1) in the presence of at least one of an alkali metal and an alkaline earth metal,RYSiCRX&#x2003;&#x2003;(1)

Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film

A method of forming an insulating film includes: forming a polysiloxane insulating film on a substrate; forming a polycarbosilane insulating film on the polysiloxane insulating film; and forming a CVD insulating film on the polycarbosilane insulating film by plasma chemical vapor deposition (CVD). The polysiloxane insulating film is formed by hydrolysis and condensation of a silane compound, and the polycarbosilane insulating film is formed by applying a solution obtained by dissolving a polycarbosilane compound in a solvent, and heating the resulting coating.

Insulating film and method for forming the same, and film-forming composition

A polycarbosilane, having a main chain in which silicon atoms and carbon atoms are alternately repeated, includes a repeating unit shown by a following general formula (1), a repeating unit shown by a following general formula (2), and a repeating unit shown by a following general formula (3). 

Polycarbosilane and method of producing the same

An insulation film comprising an organosilicon polymer and an organic polymer such as polyarylene, polyarylene ether, polyimide, and fluororesin is disclosed, wherein the organosilicon polymer has a relative dielectric constant of 4 or less and has a dry etching selection ratio of 1/3 or less to silicon oxide, fluorine-doped silicon oxide, organosilicate glass, carbon-doped silicon oxide, methyl silsesquioxane, hydrogen silsesquioxane, a spin-on-glass, or polyorganosiloxane. The insulation film is used as an etching stopper or a hard mask in a dry etching process of interlayer dielectric films for semiconductors and can produce semiconductors having excellent precision with minimal damages.

Insulation film

A method of forming a silica-based film includes: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment. The composition includes: a hydrolysis-condensation product produced by hydrolysis and condensation of at least one silane compound selected from the group consisting of compounds shown by the following general formula (A), and at least one silane compound selected from the group consisting of compounds shown by the following general formula (B) and compounds shown by the following general formula (C); and an organic solvent, 

Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device

A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a dielectric constant of 3 or lower and having silicon carbide bonds represented by Si&#x2014;C&#x2014;Si is disclosed. The film has an even thickness, is excellent in storage stability, dielectric constant, mechanical strength, etc., has low hygroscopicity, and is suitable for use as a dielectric film in semiconductor devices and the like.

Process for producing silica-based film, silica-based film, insulating film, and semiconductor device

Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The improvement in material hardness is typically greater than or about 50%. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims 37 CFR &#xa7;1.72(b).

Fluorine-free plasma curing process for porous low-k materials

Growing community of inventors

Ibaraki, Japan

Atsushi Shiota