Hitachi, Ltd.

Atsushi Shibata

Takeshi Koike

Shunroku Taya

Yukichi Ueno

Katsunobu Abe

Data communication is carried out between nodes each not having a global address. In a network management system in which a first network and a second network which have the different address systems are connected to each other through an address translator, each of the first and second networks has a node and a management protocol proxy; and each of the management protocol proxies includes a management protocol proxy data generating unit for treating, as management protocol proxy data, a transmission source address, a transmission destination address and data in a protocol data unit which are contained in a packet of a management protocol sent from the associated one of the nodes, and an address translation unit for translating the address information in the protocol data unit contained in the management protocol proxy data sent from the other management protocol proxy.

Network management system

An ion implantation apparatus which is suited for manufacturing semiconductor devices and which is particularly suited for implanting double charged ions into the wafers 22. Ions of a predetermined mass only are selected by a mass-separating electromagnet 14 from an ion beam 12 that is emitted from an ion source 10, and are implanted into the wafer 22 via a slit 16. Between the slit 16 and the mass-separating electromagnet, there are provided field electrodes 24 having a direction of deflection which is the same as that of the mass-separating electromagnet 14 to separate ions having different energy levels, and deflection magnets 26 having a direction of deflection at right angles with the direction of deflection of the mass-separating electromagnet. The slit 16 is arranged so that undeflected neutral particles and low energy ions deflected by the field electrodes 24 will pass through the slit while high energy ions will be deflected the proper amount to pass through the slit. Correction means 32 can be located between the slit and the wafer to ensure that the beam passing through the slit strikes the wafer at the proper angle.

Ion implantation apparatus for semiconductor manufacture

In an ion implantation system wherein an ion beam is scanned by deflection means in a predetermined direction on substrates placed on a disc rotating at a constant speed, to implant the substrates with ions; ion beam detectors are arranged in correspondence with a plurality of places of the substrate before the ion implantation. When the ion beam is scanned, sums of outputs of the respective ion beam detectors in the plurality of scanning positions are evaluated, and correction operations are executed so that they may become constant values. The scanning rate of the ion beam by the deflection means is controlled according to the corrections. Thus, when the ion beam is actually implanted into the substrate, the density of the ion beam becomes uniform.

Beam scanning control device for ion implantation system

An ion implant chamber for an ion implantation system is disclosed in which first and second discs are arranged concentrically and can be simultaneously rotated, the first disc is provided on a circle thereon with a plurality of wafer receiving recesses each having different diameters at both surfaces of the first disc to prevent a wafer from passing through the recess, and ions impinge upon the wafer through the end of the recess having a smaller diameter; in which when wafers have been loaded in the wafer receiving recesses, the second disc is pressed against the first disc and the wafers are held by the first and second discs, since the second disc is movable in the axial direction thereof; and in which the ion implant chamber can be separated into at least two parts, the first one of the parts can move together with the second disc, and the exchange of wafers is made through a gap between the parts thus separated.

Ion implant chamber for ion implantation system

A system for driving a rotary member for implanting ions into wafers of semiconductor devices includes a first vacuum chamber receiving the rotary member connected to a rotary shaft through a vacuum seal supported in the central portion of a shield which defines a part of the first vacuum chamber, and a second vacuum chamber receiving a peripheral portion of a shield in airtight relation. The shield is supported by two pairs of O-rings mounted in the second vacuum chamber and arranged in juxtaposed relation on opposite sides of the peripheral portion of the shield. The O-rings provide a hermetical seal to the first and second vacuum chambers. A motor is operatively connected to the rotary shaft for rotating the rotary member, and the shield is connected to another motor through a nut-and-screw arrangement. By moving the shield in reciprocatory movement to cause the peripheral portion to move in sliding movement in the second vacuum chamber, the rotary member can be moved in reciprocatory movement in the plane of its rotation without the risk of the vacuum in the first vacuum chamber being interferred with.

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Katsuta, Japan

Atsushi Shibata