Tokyo Electron Limited

Fujikin Inc.

Atsushi Sawachi

Norihiko Amikura

Suguru Sato

Takuya Nishijima

Ichiro Sone

Jun Hirose

Norikazu Sasaki

Kouji Nishino

Yohei Sawada

Eiji Takahashi

Yoshiyasu Sato

Nobukazu Ikeda

Ryousuke Dohi

Takahiro Matsuda

Hiroshi Tsujimoto

Kazunari Watanabe

Kohei Shigyou

Takamichi Kikuchi

Kumiko Ono

Takanori Mimura

Kazuyuki Tezuka

Kenichi Kato

Jun Yamashima

Yoshiharu Kishida

Kenichi Nogami

Yoshitaka Kawaguchi

Taiki Hoshiko

A gas supply device capable of saving space and supplying a mixed gas having components with stable concentration to a processing chamber in a short time includes: a plurality of fluid control units each including a flow path through which gas flows, and fluid control devices provided in the middle of the flow path; a merging flow path including a plurality of connecting portions fluidly connected to the plurality of fluid control units and a single gas outlet portion which derives the gas introduced through the plurality of connecting portions; wherein a plurality of connecting portions is arranged symmetrically with respect to the gas outlet portion in the flow path direction of the merging flow path, and two or more fluid control units are fluidly connected to each of the plurality of connecting portions.

Gas supply device and semiconductor manufacturing apparatus

A substrate processing apparatus includes a first chamber having an inner space and an opening, a substrate support disposed in the inner space of the first chamber, an actuator configured to move the substrate support between a first position and a second position, a second chamber that is disposed in the inner space of the first chamber and defines a substrate processing space together with the substrate support when the substrate support is located at the first position, and at least one fixing mechanism configured to detachably fix the second chamber to the first chamber in the inner space of the first chamber. The second chamber is transferred between the inner space of the first chamber and an outside of the first chamber through the opening when the substrate support is located at the second position.

Substrate processing apparatus

A part replacement system includes a part storage device configured to store an unused consumable part, and a replacement device that is connected to a processing device and the part storage device, the replacement device being configured to replace a used consumable part installed in the processing device with the unused consumable part stored in the part storage device. The replacement device is moved to a position of the processing device having the used consumable part that requires replacement, and the replacement device is connected to the processing device, and the part storage device is moved to a position of the replacement device connected to the processing device having the used consumable part that requires replacement, and the part storage device is connected to the replacement device.

Part replacement system and part replacement device

A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.

Substrate processing apparatus, substrate processing system, and maintenance method

A system includes: gas supply flow paths for supplying independently a main gas to a processing chamber; a flow rate control valve disposed in each gas supply flow path; an additive-gas flow path connected to the flow rate control valve; a valve for addition disposed in the additive-gas flow path; and a controller for controlling the flow rate control valve and the valve for addition to execute controls of: calculating flow rates of the main gas and an additive gas to be mixed with the main gas; calculating a total of the flow rates; calculating an internal pressure of each gas supply flow path with the total flow rate, and first and second relationships between previously acquired gas flow rates and gas pressures of the main gas and the additive gas, respectively; calculating an internal pressure ratio; and proportionally controlling openings of flow rate control valves based on the ratio.

Gas supply system, plasma processing apparatus, and gas supply method

A performance calculation method is provided. In the performance calculation method, shipment inspection data of multiple flow rate controllers are acquired. Further, first performance values indicating, as deviation values, performance of the flow rate controllers are calculated based on the acquired shipment inspection data and first coefficients for items indicating the performance of the flow rate controllers. Further, second performance values indicating, as deviation values, performance of a processing apparatus using the flow rate controllers are calculated based on the calculated first performance values and second coefficients for items indicating the performance of the processing apparatus.

Performance calculation method and processing apparatus

A flow rate controller includes a valve and a valve control unit. The valve is configured to control a flow rate of a gas supplied to a processing device. The valve control unit is configured to open the valve to start a control of the flow rate of the gas when the processing device has issued a command that instructs a start of supplying gas; calculate a cumulative flow amount by integrating the flow rate of the gas at every predetermined cycle from a time point at which the command is issued; and close the valve to stop the control of the flow rate of the gas at a time point at which the calculated cumulative flow amount has reached a predetermined target cumulative flow amount.

Flow rate controller, gas supply system, and flow rate control method

A measuring device for a vacuum processing apparatus including a processing chamber having a first gate for loading and unloading a substrate and a second gate different from the first gate is provided. The measuring device includes a case having art opening that is sized to correspond to the second gate of the processing chamber and is airtightly attachable to the second gate, a decompressing mechanism configured to reduce a pressure in the case, and a measuring mechanism accommodated in the case and configured to measure a state in the processing chamber through the opening in a state where the pressure in the case is reduced by the decompressing mechanism.

Measuring device, measuring method, and vacuum processing apparatus

A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.

Gas supply system and gas supply method

When a gas supplied to a gas injection unit is switched from a first processing gas to a second processing gas, a controller of a gas supply system performs control to open a first supply on/off valve connected to the gas injection unit and provided in a first gas supply line for supplying the first processing gas and a second exhaust on/off valve provided in a first gas exhaust line branched from the first gas supply line, close a second supply on/off valve connected to the gas injection unit and provided in a second gas supply line for supplying the second processing gas and a first exhaust on/off valve provided in a second gas exhaust line branched from the second gas supply line; and then open the second supply on/off valve and the first exhaust on/off valve and close the first supply on/off valve and the second exhaust on/off valve.

Gas supply system, plasma processing apparatus, and control method for gas supply system

A gas supply system includes first and second gas supply lines, first and second valves, and a controller. The first gas supply line is connected between a process gas source and a substrate processing chamber and has an intermediate node. The second gas supply line is connected between a purge gas source and the intermediate node. The first valve is disposed upstream of the intermediate node on the first gas supply line. The second valve is disposed upstream of the first valve on the first gas supply line. A controller controls the first and second valves to open the first and second valves in a first mode for supplying a process gas from the process gas source to the substrate processing chamber, and close the first and second valves in a second mode for supplying a purge gas from the purge gas source to the substrate processing chamber.

Gas supply system, substrate processing apparatus, and control method for gas supply system

The method for inspecting the flow rate controller for controlling a flow rate of a fluid includes creating and recording a three-dimensional database in which a first pressure, a set flow rate or a second pressure, and a control value of a piezoelectric element are associated with each other, based on reference data, measuring, as target data, control values of the piezoelectric element corresponding to the first pressure detected by a first pressure detector and the set flow rate specified in a recipe of a substrate processing process or the second pressure detected by a second pressure detector, at the time of the execution of the substrate processing process, and determining whether or not there is a problem in a diaphragm valve, by comparing the target data with the reference data included in the three-dimensional database.

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Miyagi, Japan

Atsushi Sawachi