Denso Corporation

Atsushi Sakaida

Toshihisa Taniguchi

Norio Goko

Yoshihiko Shiraishi

Tsuyoshi Fukada

Masahiro Asano

Keiji Okamoto

Hiroshi Tanaka

Yoshitsugu Abe

Yuji Tuduki

A position detection device, for detecting a change in relative position of a detection object with respect to a reference portion, includes: a base portion immovable with respect to the reference portion; a following portion deformable or movable following relative movement of the detection object with respect to the reference portion; an expandable and contractible member; and a heat flux detection section. The expandable and contractible member is provided between the base portion and the following portion, is made of a material expandable and contractible according to deformation or movement of the following portion, and generates heat during contraction and absorbs heat during expansion. The heat flux detection section is provided to be subjected to heat of the expandable and contractible member, and is configured to detect a heat flux that is a flow of heat between an inside and an outside of the expandable and contractible member.

Position detection device

A workpiece holding method and holding system able to shorten the workpiece attachment/detachment time, wherein pressurized air is circulated through a nozzle of an ejector unit of a chuck at all times to make the inside of a suction chamber a negative pressure before chucking a workpiece, completion of chucking is detected based on a pressure value detected by a pressure sensor after chucking the workpiece, and the workpiece is unchucked by having a valve close an exhaust port to raise the pressure inside an exhaust chamber and introducing pressurized air from the ejector unit to the suction chamber.

Workpiece picking and placing method

After an Si wafer is anisotropically etched through an etching mask having an opening in an anisotropically etching solution, an etching face of the Si wafer emerged by the anisotropic etching is subjected to anodic oxidation by applying a positive voltage for anodic oxidation on the Si wafer. As a result, the etching face of the Si wafer is isotropically etched due to the anodic oxidation in the anisotropic etching solution. By the isotropic etching thus performed, a sharp corner formed at an end portion of a recess portion formed in the Si wafer by the anisotropic etching, is rounded. Because the isotropic etching reaction progresses very slowly in comparison with the anisotropic etching, control of the etching can be made easy and accurately. As a result, the thickness of the diaphragm can be prevented from being dispersed.

Method of etching silicon wafer and silicon wafer

Growing community of inventors

Kariya, Japan

Atsushi Sakaida