Hitachi, Ltd.

Hitachi Plant Engineering Construction Co., Ltd.

Hatachi Ltd

Atsushi Saiki

Seiki Harada

Kiichiro Mukai

Yoichi Oba

Kikuji Sato

Toshio Okubo

Noriyuki Kumasaka

Yoshihiro Shiroishi

Yoshio Homma

Michio Suzuki

Kazuo Shiiki

Hideo Sunami

Isamu Yuito

Saburo Nonogaki

Mitsuhiro Kudo

Takashi Nishida

Takao Iwayanagi

Shojiro Asai

Michiyoshi Maki

Akira Abe

Kinichiro Asami

Masami Tomono

Takeshi Takagi

Genichi Kamoshita

Yuichiro Oya

Terue Tsunoda

A semiconductor device wherein a coating film which is made of a polyimide resin or a polyimide isoindoloquinazolinedione resin and which is at least 10 &mgr;m thick is disposed on at least an active region of a semiconductor substrate, and the resultant semiconductor substrate is encapsulated in a ceramic package. The semiconductor device has troubles relieved conspicuously, the troubles being ascribable to alpha-rays which come flying from impurities contained in the material of the package.

Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate

A semiconductor device wherein a coating film which is made of a polyimide resin or a polyimide isoindoloquinazolinedione resin and which is at least 10 .mu.m thick is disposed on at least an active region of a semiconductor substrate, and the resultant semiconductor substrate is encapsulated in a ceramic package. The semiconductor device has troubles relieved conspicuously, the troubles being ascribable to alpha-rays which come flying from impurities contained in the material of the package.

Integrated circuit having reduced soft errors and reduced penetration of

Semiconductor device and method for producing the same

A clean room wherein clean air obtained through filters from the upper portion of the clean room is blown toward the floor, through the openings in the floor, and with the clean air being discharged again through the filters from the upper portion of the clean room. The air flow rate of clean air in the aisle areas is greater than the air flow rate in the wafer handling areas, and the opening rate of the floor is smaller in the portion near to an air return under the floor than in the portion remote from the air return thereby greatly reducing the diffusion of dust to the wafer handling areas.

Clean room

Herein disclosed is a thin film magnetic head which is so constructed that a conductor layer arranged in a non-magnetic insulating layer isolating two magnetic poles and adapted to form a coil of plural turns has a height made larger than the width and gap thereof. A method of fabricating that head includes the step of forming a non-magnetic insulating layer, the step of etching the insulating layer by using a mask layer formed thereover as a mask, the step of depositing a metal for providing a conductor layer, the step of removing the mask layer together with the metal thereover, and the step forming a coating of a non-magnetic insulating layer thereover, thereby to form the conductor layer. The head thus fabricated has its magnetic recording and reproducing characteristics improved.

Thin film magnetic head and fabricating method thereof

Disclosed is a selective etching method of a polyimide type resin film which uses an etching mask consisting of a negative type photoresist material prepared by adding a photosensitive reagent to an unsaturated ketone polymer such as polymethylisopropenylketone as the base resin and an etching solution consisting of 20 to 40% by volume of hydrazine hydrate and the balance of a polyamine. The etching method of the present invention can provide the pattern of the polyimide type resin film having high dimensional accuracy by wet etching.

Selective etching method of polyimide type resin film

A semiconductor device fabricated by forming a layer of cured polyimide resin on a semiconductor body, forming a photoresist layer having a prescribed pattern on said cured layer, immersing in an etchant consisting of hydrazine and ethylenediamine to said cured layer through said prescribed pattern, whereby said cured layer is precisely etched according to said prescribed pattern and prescribed surfaces of said semiconductor body are exposed, forming a metal layer on the surface of said polyimide and the prescribed surfaces of said body, and selectively etching said metal layer so as to form a prescribed pattern.

Method for fabricating semiconductor device and etchant for polymer resin

A semiconductor device fabricated by forming a layer of semicured polyimide resin on a semiconductor body, forming a photoresist layer having a prescribed pattern on said semicured layer, immersing in an etchant consisting of hydrazine and ethylenediamine to said semicured layer through said prescribed pattern, whereby said semicured layer is precisely etched according to said prescribed pattern and prescribed surfaces of said semiconductor body are exposed, curing said semicured polyimide so as to form a layer of said polyimide resin, forming a metal layer on the surface of said polyimide and the prescribed surfaces of said body, and selectively etching said metal layer so as to form a prescribed pattern.

Disclosed is a semiconductor device including a Si body, and SiO.sub.2 layer disposed on the surface of the body, an aluminum oxide layer having a thickness of about 50 A on the SiO.sub.2 layer, which is formed by applying a solution including an aluminum chelate compound onto the SiO.sub.2 layer and heating the solution at a temperature of 300.degree. C. for 30 minutes, and a polymer resin layer of polyimide disposed on the aluminum oxide layer. In this device, the adhesive-strength between the SiO.sub.2 layer and the polyimide layer is remarkably increased when compared with a semiconductor device wherein the polyimide layer is directly disposed on the SiO.sub.2 layer.

Aluminum oxide layer bonding polymer resin layer to semiconductor device

Disclosed is a discrete semiconductor device comprising a Si body having an emitter region, a base region and a collector region, an SiO.sub.2 layer disposed on the surface of the body, a polyimide resin having a thickness of 5 .mu. disposed on the SiO.sub.2 layer, electrodes penetrating through the SiO.sub.2 layer and the polyimide resin thereby contacting the emitter region and the base region, respectively and extending on the surface of the polyimide resin, whereby it becomes easy to bond a wire connected to an external electrode with the electrodes.

Discrete semiconductor device having polymer resin as insulator and

An insulating film provided on the surface of a semiconductor device having a protective film of silicon dioxide is composed of a double layer. The double layer consists of a thin film which is disposed on at least a part of the protective film of silicon dioxide and which is made of an organic compound containing either an amino group as well as an alkoxysilane group or an epoxy group as well as an alkoxysilane group, and a film which is disposed so as to cover the thin film of an organic compound and which is made of a heat-resisting polymer resin. The heat-resisting polymer is the reaction product of 4,4'-diamino-diphenylether, 4,4'-diamino-diphenyl ether-3-carbonyl amide, and pyromellitic acid dianhydride.

Growing community of inventors

Musashimurayama, Japan

Atsushi Saiki