Central Glass Company, Limited

Atsushi Ryokawa

Shuhei Yamada

Yoshinori Akamatsu

Soichi Kumon

Hidehisa Nanai

Masanori Saito

Takashi Saio

Shinobu Arata

Takaaki Shibayama

Shinsuke Nakagawa

Yuki Fukui

Yuzo Okumura

Katsuya Kondo

Hisakazu Itoh

The present invention is directed to a liquid chemical for forming a water-repellent protective film on a silicon element-containing wafer surface, a method of preparing the liquid chemical and a method of manufacturing a surface-treated body with the use of the liquid chemical, wherein the liquid chemical includes the following components: (I) a silylation agent; (II) at least one kind of nitrogen-containing compound selected from the group consisting of those of the following general formulas [1] and [2]; and (III) an organic solvent.

Liquid chemical for forming water-repellent protective film, method for preparing same, and method for manufacturing surface-treated body

Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: RSi(H)Xand an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

Liquid chemical for forming protecting film

Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula RSi(H)(X)and an acid; or a silicon compound (C) represented by the general formula RSi(H)(CH)(Z)and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.

Chemical for forming protective film

Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: RSi(H)Xand an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

Disclosed is a method of producing a hafnium amide complex represented by general formula: Hf(NRR), characterized by comprising: carrying out a reduced-pressure distillation after a lithium alkylamide represented by general formula: Li(NRR) is added to and allowed to react with a tertiary hafnium alkoxide complex represented by general formula: Hf[O(CRRR)]. (In the formulas, R, Rand Rindependently represent either a phenyl group, a benzyl group, or a primary, secondary or tertiary alkyl group having a carbon number 1-6; and Rand Rindependently represent either a methyl group or an ethyl group; however, a case where all of R, Rand Rare methyl groups, and a case where one of R, Rand Ris an ethyl group and the other two are methyl groups are excluded.)

Hafnium amide complex manufacturing method and hafnium-containing oxide film

To provide, in an industrial scale production of iodine heptafluoride, a method for producing it easily and continuously, with a single reactor, efficiently and stably by putting iodine and fluorine directly into the reactor. To provide a method for producing iodine heptafluoride, characterized in that each of a fluorine-containing gas and an iodine-containing gas is supplied to a reactor, in which iodine heptafluoride is previously present, in order to suppress a local reaction when iodine and fluorine as the raw materials are put into the reactor, and the reaction is conducted while circulating and mixing the gas in the reactor.

Method for production of iodine heptafluoride

Disclosed are first to sixth processes for respectively producing hafnium tetra-tertiary-butoxide, tetrakis(acetylacetonato)hafnium, tetrakis(1-methoxy-2-methyl-2-propanolato)hafnium, hafnium tetra-tertiary-amyloxide, tetrakis(3-methyl-3-pentoxy)hafnium, and tetrakis(hexafluoroacetylacetonato)hafnium. The first process includes the steps of (a) adding a compound A(OXORf)(e.g., CFSOH) to a crude hafnium amide Hf[N(R)(R)]; (b) subjecting a product of the step (a) to a distillation under reduced pressure; (c) adding a lithium alkylamide Li(NRR) to a fraction obtained by the step (b); (d) subjecting a product of the step (c) to a distillation under reduced pressure; (e) adding tertiary butanol to a fraction obtained by the step (d); and (f) subjecting a product of the step (e) to a distillation under reduced pressure. The tertiary butanol of the step (e) is replaced with acetylacetone, 1-methoxy-2-methyl-2-propanol, tertiary amyl alcohol, 3-methyl-3-pentanol, and hexafluoroacetylacetone in the second to six processes, respectively.

Processes for producing hafnium complexes

A process for producing a high-purity hafnium amide includes the steps of (a) adding a compound which contains a carbonyl group or sulfonyl group and is represented by the formula of A(OXOR)(e.g., CFSOH, Hf(CFSO), (CFSO)O, CFCOH, CHSOH, CHSOH, and (CHSO)O), to a crude hafnium amide which is represented by the formula of Hf[N(R)(R)], where each of Rand Rindependently represents a methyl group or ethyl group, and which contains a zirconium component as an impurity; and (b) subjecting a product of the step (a) to a distillation under reduced pressure, thereby removing the zirconium component from the crude hafnium amide.

Process for producing high-purity hafnium amide

A process for producing silicon tetrafluoride includes reacting at 250&deg; C. or higher elemental silicon with hydrogen fluoride, thereby producing a gas product containing silicon tetrafluoride. This reaction can be conducted such that the gas product contains at least 0.02 volume % of the unreacted hydrogen fluoride. The process may further include bringing the gas product into contact with elemental nickel at a temperature of 600&deg; C. or higher. Alternatively, the process may further include adding at least 0.1 volume % of hydrogen fluoride to the gas product to prepare a gas mixture; and bringing the gas mixture into contact with elemental nickel at a temperature of 400&deg; C. or higher.

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Ube, Japan

Atsushi Ryokawa