Mitsubishi Denki Kabushiki Kaisha

Atsushi Oshida

Teruhiko Kumada

Atsuko Fujino

Koji Tange

Hitoshi Fukuma

By using a developer consisting essentially of one organic solvent selected from the group consisting of a ketone having 3 to 8 carbon atoms, a carboxylate ester having 3 to 8 carbon atoms, which may have an alkoxy group, and a dicarboxylate ester having 3 to 8 carbon atoms for developing a positive-type radiation resist containing a copolymer of an &agr;-methyl styrene compound and an &agr;-chloroacrylate ester compound as a base resin, there is provided a developing process and a process for forming a pattern (according to GHOST method in particular) which are used for preparing an excellent resist pattern profile, a process for preparing a photomask and a process for preparing a semiconductor device.

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Tokyo, Japan

Atsushi Oshida