Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Atsushi Onogi

Takashi Okawa

Hiroomi Eguchi

Yusuke Yamashita

Toru Onishi

Yuichi Takeuchi

Jun Saito

Sachiko Aoi

Shoji Mizuno

Shinichiro Miyahara

Katsuhiro Kutsuki

Shuhei Mitani

Tadashi Misumi

Kiyoharu Hayakawa

A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion includes an n-type cathode region being in contact with the body region, and a p-type anode region separated from the body region by the cathode region.

Temperature sensing semiconductor device

Described herein is a semiconductor device comprising: a semiconductor substrate; a trench provided at a surface of the semiconductor substrate; a first insulating layer covering an inner surface of the trench; and a second insulating layer located at a surface of the first insulating layer in the trench. A refraction index of the first insulating layer is larger than a refraction index of the second insulating layer.

Semiconductor device and manufacturing method of semiconductor device

A semiconductor device may include a semiconductor substrate in which a semiconductor element is provided, and an insulation film provided on the semiconductor substrate, in which the semiconductor substrate may include a first portion and a second portion which has a thickness thinner than a thickness of the first portion, an upper surface of the second portion may be positioned lower than an upper surface of the first portion, a recess extending in a thickness direction of the semiconductor substrate may be provided on the upper surface of the second portion located at a position where the first portion and the second portion adjoin to each other, and the insulation film may extend over from the first portion to the second portion, and fill the recess.

Semiconductor device with suppressed decrease in breakdown voltage of an insulation film and manufacturing method of the same

A method of manufacturing an insulated gate type switching device includes forming a gate trench that has a first portion with a first width in a first direction and a second portion with a second width in the first direction, the second width being wider than the first width. In an oblique implantation, second conductivity type impurities are irradiated at an irradiation angle inclined around an axis orthogonal to the first direction. The first width, the second width, and the irradiation angle are set such that the second conductivity type impurities are suppressed, at a first side surface of the first portion, from being implanted into a part below a lower end of a second semiconductor region, and at a second side surface of the second portion, the impurities are implanted into the part below the lower end of the second semiconductor region.

Insulated gate type switching device and method for manufacturing the same

A manufacturing method of a semiconductor device includes: a semiconductor substrate including a drain, a drift making contact with a front face of the drain, a body contacting with a front face of the drift, a source provided in part of a front face of the body, and a floating surrounded by the drift; and a gate including an insulator formed on an inner wall of a trench and a electrode disposed inside the insulator and which has a bottom portion contacting with the floating, the manufacturing method includes: forming the trench in a semiconductor wafer so as to have a bottom portion in which an end portion in a short direction perpendicular to a longitudinal direction thereof is deeper than a central portion; injecting an impurity ions into the bottom portion of the trench; and forming the central portion of the trench in the short direction to be deepened.

Manufacturing method of semiconductor device

A lateral semiconductor device including a semiconductor substrate; a buried oxide layer formed on the semiconductor substrate, and an active layer formed on the buried oxide layer. The active layer includes a first conductivity type well region, a second conductivity type well region, and a first conductivity type drift region interposed between the first conductivity type well region and the second conductivity type well region. A region where current flows because of carriers moving between the first conductivity type well region and the second conductivity type well region, and a region where no current flows are formed alternately between the first conductivity type well region and the second conductivity type well region, in a direction perpendicular to a carrier moving direction when viewed in a plan view.

Semiconductor device

A semiconductor device includes a semiconductor layer; a first type of a first semiconductor element that is arranged in a first element region of the semiconductor layer, has first and second main electrodes, and switches current; and a second type of a second semiconductor element that is arranged in a second element region of the semiconductor layer, has third and fourth main electrodes, and freewheels the current. The first and second element regions are adjacent in a direction orthogonal to a direction in which current flows, and are formed in a loop shape over the entire element region when the semiconductor layer is viewed from above. The first main electrode is electrically connected to the third main electrode, and the second main electrode is electrically connected to the fourth main electrode. When the semiconductor layer is viewed from above, a ratio of a length of the first main electrode to a length of the second main electrode is larger than a ratio of a length of the third main electrode to a length of the fourth main electrode.

A manufacturing method for manufacturing a lateral semiconductor device having an SOI (Silicon on Insulator) substrate, the lateral semiconductor device comprising a semiconductor layer that includes a buried oxide layer and a drift region, the manufacturing method comprising an etching process of etching, by a predetermined depth, a LOCOS oxide that projects from a surface of the semiconductor layer by a predetermined thickness and is embedded in the semiconductor layer by a predetermined thickness, and a trench forming process of simultaneously forming a first trench extending from the drift region toward the buried oxide layer, and a second trench extending from a portion obtained by the etching in the etching process toward the buried oxide layer, at a same etching rate, and stopping forming the first trench and the second trench at a time when the second trench reaches the buried oxide layer.

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Toyota, Japan

Atsushi Onogi