Murata Manufacturing Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Atsushi Ono

Hirotsugu Mori

Satoshi Tanaka

Norihisa Mino

Stephen William John

Hisaaki Gyoten

Morio Tomiyama

Akira Taomoto

Kazuo Yokoyama

Takanori Uejima

Katsuhiko Asai

Takeshi Kogure

Hiroyuki Nagamori

Sachio Nagamitsu

Masaki Yamamoto

Hiroki Sato

Yuko Tsusaka

Yasunao Okazaki

Tsutomu Kanno

Yuriko Kaneko

Yudai Fudaba

Hiromasa Tamaki

Osamu Yamada

Mitsunori Samata

Yukiteru Sugaya

Yuji Adachi

Masaki Tada

Miho Uehara

Masashige Kawabe

A radio frequency circuit includes a first radio frequency circuit, a second radio frequency circuit, and a first switch circuit. The first switch circuit includes a first terminal connected to an antenna connection terminal, a second terminal connected to the first radio frequency circuit, and a third terminal connected to the second radio frequency circuit. The first radio frequency circuit includes a first power amplifier circuit supporting a first power class, and a first filter circuit connected to the first power amplifier circuit and having a passband that includes a first band. The second radio frequency circuit includes a second power amplifier circuit supporting a second power class having a maximum output power greater than a maximum output power of the first power class. The second radio frequency circuit includes a second filter circuit connected to the second power amplifier circuit and having a passband that includes the first band.

Radio frequency circuit and radio frequency module

A frequency division duplex (FDD) first band includes a first downlink operating band and a first uplink operating band. An FDD second band includes a second downlink operating band and a second uplink operating band. In the FDD first band and the FDD second band, (1) the first downlink operating band, second downlink operating band, first uplink operating band, and second uplink operating band are positioned in order from lowest to highest frequency. The frequency range of the first uplink operating band and that of the second uplink operating band do not overlap each other. A filter is formed in or on a first substrate having piezoelectric properties and has a pass band including the first and second uplink operating bands.

Acoustic wave filter circuit, multiplexer, front-end circuit, and communication apparatus

A radio-frequency circuit is used in simultaneous transfer of a radio-frequency signal of 4G and a radio-frequency signal of 5G, and includes a first transfer circuit that selectively receives the 4G radio-frequency signal or the 5G radio-frequency signal, and transfers a radio-frequency signal of a first communication band including a first transmission band and a first reception band and a radio-frequency signal of a second communication band including a second transmission band and a second reception band. The first and second transmission bands at least partially overlap. The first transfer circuit includes a first power amplifier that amplifies transmission signals of the first and second communication bands, and a first transmission filter that has a first passband including the first and second transmission bands, and passes the transmission signals of the first and second communication bands output from the first power amplifier.

Radio-frequency circuit and communication device

A radio-frequency front-end circuit includes a first switch and a first transfer circuit that transfers a first radio-frequency signal. The first switch includes a first antenna terminal connected to a first antenna, a second antenna terminal connected to a second antenna, and first and second selection terminals. The first selection terminal is connected to the first transfer circuit, and the second selection terminal connected to a second transfer circuit. The second transfer circuit transfers the second radio-frequency signal. Selection between conduction of the first antenna terminal with the first selection terminal and conduction of the first antenna terminal with the second selection terminal is exclusively carried out in the first switch. Selection between conduction of the second antenna terminal with the first selection terminal and conduction of the second antenna terminal with the second selection terminal is exclusively carried out in the first switch.

Radio-frequency front-end circuit and communication device

The thermoelectric conversion element according to the present disclosure comprises a first electrode, a second electrode, a first intermediate layer, a second intermediate layer, and a thermoelectric conversion layer. The first intermediate layer is provided between the thermoelectric conversion layer and the first electrode. The first intermediate layer is in contact with the thermoelectric conversion layer. The first electrode is in contact with the first intermediate layer. The second intermediate layer is provided between the thermoelectric conversion layer and the second electrode. The second intermediate layer is in contact with the thermoelectric conversion layer. The second electrode is in contact with the second intermediate layer. The first electrode and the second electrode are composed of a CuZn alloy. The thermoelectric conversion layer is composed of a thermoelectric conversion material containing Mg. The thermoelectric conversion material contains at least one kind of element selected from the group consisting of Sb and Bi. The thermoelectric conversion material contains at least one kind of element selected from the group consisting of Se and Te. The thermoelectric conversion material has a LaO-type crystalline structure. A composition of the first intermediate layer is different from both a composition of the first electrode and a composition of the thermoelectric conversion layer. A composition of the second intermediate layer is different from both a composition of the second electrode and a composition of the thermoelectric conversion layer.

Thermoelectric conversion element and thermoelectric conversion module

A radio frequency circuit includes: a plurality of input terminals including a first input terminal through which a first Wireless Local Area Network (WLAN) transmission signal is received and a second input terminal through which a 5th Generation New Radio (5G NR) transmission signal is received; a power amplifier; a first switch connected to an input side of the power amplifier and switches a connection of the power amplifier between the plurality of input terminals; and a variable phase circuit connected to an output side of the power amplifier and changes the impedance matching between the power amplifier and the load in accordance with a connection status of the first switch.

Radio frequency circuit and communication device

A high frequency amplifier circuit includes an input terminal and an output terminal, transmission power amplifiers that amplify a high frequency signal in first and second frequency bands, each of which is a part of a communication band, at equal to or higher than a prescribed amplification factor, respectively, switches that exclusively switch connection between the input terminal, the transmission power amplifier, and the output terminal, and connection between the input terminal, the transmission power amplifier, and the output terminal, and a transmission filter that is connected between the output terminal and the switch and has a communication band as a pass band, the first frequency band including a frequency band other than the second frequency band, the second frequency band including a frequency band other than the first frequency band.

High frequency amplifier circuit and communication device

Radio-frequency front-end circuit includes: first transfer circuit that transfers a 4G signal, a first antenna terminal connected to a first antenna, a second antenna terminal connected to a second antenna, and a switch that includes a first selection terminal and a second selection terminal. The first selection terminal is connected to the first transfer circuit, and the second selection terminal is connected to a second transfer circuit that transfers a 5G signal. The switch: when the first antenna is high in antenna sensitivity, connects the first antenna terminal to the first selection terminal, and connects the second antenna terminal to the second selection terminal; and when the second antenna is high in antenna sensitivity, connects the first antenna terminal to the second selection terminal, and connects the second antenna terminal to the first selection terminal.

A radio frequency circuit includes: a first filter having a first passband that corresponds to a portion of a frequency range of a first communication band allocated as a communication band for TDD; a second filter having a second passband that corresponds to a portion of the frequency range of the first communication band, the second passband being different from the first passband; a power amplifier that amplifies a transmission signal in the first communication band; a low-noise amplifier that amplifies a reception signal in the first communication band; and a switch that switches between connecting the first filter and the power amplifier and connecting the first filter and the low-noise amplifier, and switches between connecting the second filter and the power amplifier and connecting the second filter and the low-noise amplifier.

Radio frequency circuit, antenna module, and communication device

A power amplifier module includes a first transistor that amplifies and outputs a signal, a second transistor that supplies a bias current to a base of the first transistor, and a ballast resistor circuit that is disposed between the base and an emitter of the second transistor and that includes first and second resistive elements and a switching element. The first resistive element is arranged in series on a line connecting the base and the emitter. The first and second resistive elements are series-connected or parallel-connected. When the second resistive element is series-connected to the first transistor, the switching element is parallel-connected to the second resistive element. When the second resistive element is parallel-connected to the first transistor, the switching element is series-connected to the second resistive element. The switching element is switched on/off based on a collector current of the second transistor.

Power amplifier module

A high frequency amplifier circuit includes an input terminal and an output terminal, transmission power amplifiers (L,H) that amplify a high frequency signal in first and second frequency bands, each of which is a part of a communication band, at equal to or higher than a prescribed amplification factor, respectively, switches () that exclusively switch connection between the input terminal, the transmission power amplifier (L), and the output terminal, and connection between the input terminal, the transmission power amplifier (H), and the output terminal, and a transmission filter that is connected between the output terminal and the switch () and has a communication band as a pass band, the first frequency band including a frequency band other than the second frequency band, the second frequency band including a frequency band other than the first frequency band.

A radio frequency circuit can transfer radio frequency signals used in first and second communication systems, and includes: a first transfer circuit that transfers a radio frequency signal having a frequency range in a first communication band having first transmission and receiving bands; and a second transfer circuit that transfers a radio frequency signal having a frequency range in a second communication band having second transmission and receiving bands. The radio frequency circuit can simultaneously transmit transmission signals having frequency ranges in the first and second communication bands using the first and second transfer circuits. The first receiving band is lower than the first transmission band, the first transmission band is lower than the second transmission band, and the second transmission band is lower than the second receiving band. The first and second transfer circuits are mounted on different mounting boards.

Growing community of inventors

Kyoto, Japan

Atsushi Ono