Socionext Inc.

Daikin Industries, Ltd.

Hitachi Metals, Ltd.

Kyocera Corporation

Kioxia Corporation

Asahi Kasei Kabushiki Kaisha

Asahi Kasei Kogyo Kabushiki Kaisha

Proterial, Ltd.

Namiki Seimitsu Houseki Kabushiki Kaisha

Namiki Seimitsu Housebi Kabushikikaisha

Atsushi Okamoto

Hirotaka Takeno

Wenzhen Wang

Hiroyuki Hoshi

Setsuo Andou

Junichi Matsuda

Satoshi Kawano

Masahiro Oka

Ichiro Shibasaki

Yuusuke Fujimoto

Masanori Ukibune

Kazuma Yokohara

Kazuhiko Tani

Yasuhiro Kouno

Junji Iwahori

Hirotaka Geka

Tomoyasu Kitaura

Hideho Sakaguchi

Yurika Gotou

Qi Fang

Kazuhiro Takahashi

Mitsushi Itano

Daisuke Karube

Koji Sato

Shun Ohkubo

Yuzo Komatsu

Hiroyuki Yamaguchi

Shin Takahashi

Tatsuya Takakuwa

Shinya Matsuoka

Yuuki Yotsumoto

Masakazu Okamoto

Tatsuya Toyama

Toshio Hino

Hiroki Matsudaira

Takuya Kotani

Akito Iwai

Takashi Yoshida

Tetsuya Yasuda

Akinori Nagaoka

Tim Coessens

Nobuyuki Kitamura

Keisuke Nonaka

Masahiko Nishiwaki

Ryoichi Kato

Takashi Nogawa

Kazuhito Fukumasu

Ichiro Okada

Shun Takano

Kenji Okishiro

Kazuhiro Nakayama

Xindao Pan

A semiconductor device includes a substrate; first and second fins protruding from the substrate; a first transistor including the first fin; a second transistor above the first transistor; and a first power supply line electrically connected to the first fin through the second fin. The first transistor includes first and second impurity areas in the first fin, and a first gate insulating film on the first fin between the first and second impurity areas. The second transistor includes a first semiconductor area above the first fin, a third impurity area in the first semiconductor area above the first impurity area, a fourth impurity area in the first semiconductor area above the second impurity area, and a second gate insulating film on the first semiconductor area between the third and fourth impurity areas. The first and second transistors have a common gate on the first and second gate insulating films.

Semiconductor device having multiple fins on substrate

A semiconductor device includes a first power supply line, a second power supply line, a first ground line, a switch circuit connected to the first and the second power supply line, and a switch control circuit connected to the first ground line and the first power supply line. The switch circuit includes a first and a second transistor of a first conductive type. A first gate electrode of the first transistor is connected to a second gate electrode of the second transistor. The switch control circuit includes a third transistor of a second conductive type, and a fourth transistor of a third conductive type. A third gate electrode of the third transistor is connected to a fourth gate electrode of the fourth transistor. A semiconductor device includes a signal line that electrically connects a connection point between the third and fourth transistor to the first and second gate electrode.

Semiconductor device

A semiconductor device includes first and second power supply lines formed in a first wiring layer and extending in a first direction; third and fourth power supply lines formed in a second wiring layer, extending in a second direction, and connected to the first and second power supply lines, respectively; a fifth power supply line formed in the first wiring layer; and a first power switch circuit including a transistor provided between the first and fifth power supply lines. The transistor overlaps at least one of the third and fourth power supply lines. The first power switch circuit includes first and second wirings formed in the second wiring layer, extending in the second direction, not overlapping the third and fourth power supply lines, and connected to a source of the transistor and the fifth power supply line, and to a drain and the third power supply line, respectively.

Power supply line arrangement having power switch circuit

A semiconductor device includes a first chip including a substrate and a first wiring layer formed on a first surface of the substrate; and a second wiring layer formed on a second surface of the substrate opposite to the first surface of the substrate. The second wiring layer includes a first power line to which a first power potential is applied; a second power line to which a second power potential is applied; a third power line to which a third power potential is applied; a first switch connected between the first power line and the second power line; and a second switch provided on one of the first power line or the third power line. The first chip includes a first circuit provided between the first power line and the third power line.

A warm-water generating apparatus () uses, as a refrigerant, a mixed refrigerant containing at least 1,2-difluoroethylene (HFO-1132(E)). The warm-water generating apparatus () includes a compressor (), a heat-source-side air heat exchanger (), an expansion valve (), and a use-side water heat exchanger (). The water heat exchanger () causes the mixed refrigerant flowing therein and first water to exchange heat with each other to heat the first water.

Warm-water generating apparatus

A semiconductor device has: a first chip having a substrate and a first wiring layer; and a second wiring layer formed on a second surface of the substrate. The second wiring layer has a first power supply line, and a second power supply line. The first chip has a first ground line, a third power supply line, a fourth power supply line, vias formed in the substrate and connecting the first power supply line and the third power supply line, a first area in which the first ground line and the fourth power supply line are arranged, and a first circuit connected between the first ground line and the third power supply line. A switch is connected between the first power supply line and the second power supply line. In a plan view, the third power supply line, the vias, and the first circuit are arranged in the first area.

A hot water supply apparatus includes a hot water supply channel. The hot water supply channel includes a heating section configured to heat water and a tank configured to store the water heated by the heating section. The hot water supply channel is configured to execute a first hot water supply operation in a hot water storage state in which a low-temperature layer, a medium-temperature layer, and a high-temperature layer are formed in the tank. The first hot water supply operation includes heating water in the medium-temperature layer to a first temperature by the heating section and supplying the water heated to a hot water supply target.

Hot water supply apparatus

A semiconductor device includes a first chip including a substrate and a first interconnection layer formed on a first surface of the substrate; and a second interconnection layer formed on a second surface opposite to the first surface of the substrate. The second interconnection layer includes a first power line to which a first power potential is applied, a second power line to which a second power potential is applied, and a first switch connected between the first power line and the second power line. The first chip includes a first grounding line, a third power line to which the second power potential is applied, and a first region in which the first grounding line and the third power line are disposed. In plan view, the first switch overlaps the first region.

A semiconductor device includes a chip that includes a substrate and a first interconnection layer on a surface of the substrate; and a second interconnection layer on another surface opposite to the surface of the substrate. The second interconnection layer includes a first power line having a first power potential, a second power line having a second power potential, and a switch between the first power line and the second power line. The chip includes a first grounding line, a third power line having the second power potential, a first region having the first grounding line and the third power line, a second grounding line, a fourth power line having the first power potential, and a second region having the second grounding line and the fourth power line. In plan view, the switch is between the first region and the second region.

A copper-ceramic joint body having high joint strength is provided. The copper-ceramic joint body includes: a copper member made of Cu or Cu alloy; a ceramic member joined to the copper member and made of nitride of Si or Al; and a joint layer formed on joint surfaces of the copper member and the ceramic member, and containing Cu and Mg and further containing at least one type of active metal elements selected from a group of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ca, Y, Ce, La, Sm, Yb, Nd, Gd and Er, and shear strength of the joint layer is equal to or higher than 10 MPa.

Copper-ceramic joint body, brazing member and method of manufacturing copper-ceramic joint body

A semiconductor device includes a first semiconductor chip, and a second semiconductor chip, wherein the first semiconductor chip includes a substrate including a first principal surface facing the second semiconductor chip and a second principal surface opposite to the first principal surface, a first power supply line and a second power supply line arranged on the second principal surface of the substrate, a power supply switch circuit arranged electrically between the first power supply line and the second power supply line, a first via arranged in the substrate to extend from the first power supply line to the first principal surface, and a second via arranged in the substrate to extend from the second power supply line to the first principal surface, wherein the second semiconductor chip includes a third power supply line connected to the first via, and a fourth power supply line connected to the second via.

Provided is an air conditioning system capable of detecting in advance a device that consumes more power than the power that can be fed by a power feed unit. An air conditioning system includes a refrigerant cycle, a power feed unit, and a controller. The refrigerant cycle includes an outdoor unit and a plurality of indoor units. In a case where a power source for at least one indoor unit of the plurality of indoor units has been interrupted, the power feed unit feeds power from an auxiliary power source to the indoor unit for which the power source has been interrupted. When a predetermined device has been connected to at least part of the plurality of indoor units and the power feed unit, the controller performs deactivation of at least one of functions of the device.

Air conditioning system having a normal control mode and multi-tenant control mode

A semiconductor integrated circuit device includes first and second semiconductor chips stacked one on top of the other. First power supply lines in the first semiconductor chip are connected with second power supply lines in the second semiconductor chip through a plurality of first vias. The directions in which the first power supply lines and the second power supply lines extend are orthogonal to each other.

Semiconductor integrated circuit device and semiconductor package structure

A water heating system includes: a refrigerant circuit that includes a compressor and in which a refrigerant flows; and a water circuit in which water flows. The refrigerant circuit shares with the water circuit a water heat exchanger that heats the water using the refrigerant discharged from the compressor. The water heat exchanger includes a first heat-exchanging unit in which the refrigerant exchanges heat with the water at a water outlet portion. The refrigerant circuit further includes a heat radiator that is disposed between the compressor and the first heat-exchanging unit and that radiates heat of the refrigerant discharged from the compressor. The heat radiator is configured to radiate heat of the refrigerant to water that flows on an upstream side of the water outlet portion.

Water heating system

Growing community of inventors

Osaka, Japan

Atsushi Okamoto