Honda Motor Co., Ltd.

Shindengen Electric Manufacturing Company Limited

Honda Giken Kogyo Kabushiki Kaisha

Kabushiki Kaisha F. C. C.

Atsushi Ogasawara

Koji Ito

Kazuhiko Ito

Koya Muyari

Yasushi Fujimoto

Junya Watanabe

Yoshiaki Tsukada

Toshio Yamamoto

Takashi Ozeki

Takashi Matsuda

Osamu Suzuki

Toshiyuki Sato

Makoto Kataoka

Hayato Maehara

Shigeru Tajima

Masahiko Tsuchiya

Katsu Yoshimoto

Kazuyuki Fukaya

Yukinori Kurakawa

Mitsuo Nakagawa

Hiroyuki Kawakubo

Shunichi Nakamura

Tomoo Shiozaki

Satoru Nojima

Kuniaki Ikui

Haruomi Sugita

Yukiya Ueda

Masataka Tanaka

Eiko Shiozaki

Yusuke Maeyama

Sakae Mizumura

Takayuki Konuma

Seiji Onozawa

Eiichi Suzuki

Ryohei Osawa

Tadashi Katoh

Akihiko Shibukawa

Akio Ooishi

Yoshinki Tsukada

Heijiro Yoshimura

Fumihiro Homma

Noriaki Takano

Shinichi Nagase

A semiconductor device manufacturing method includes: a pretreatment step of performing a hydrophobic treatment on a first exposed region of an exposed surface, an n-type semiconductor layer being exposed from the first exposed region, and a pn junction being exposed from the exposed surface; an impurity supplying step of supplying an n-type impurity to the first exposed region; a channel stopper forming step of irradiating the first exposed region with a laser beam to introduce the n-type impurity into the n-type semiconductor layer, thus forming a channel stopper; and a glass layer forming step of forming a glass layer using a glass composition so as to cover the exposed surface.

Semiconductor device manufacturing method and semiconductor device

In a method of manufacturing a semiconductor device having an oxide film removing step where an oxide film formed on a surface of a semiconductor substrate is partially removed, the oxide film removing step includes: a first step where a resist glass layer is selectively formed on an upper surface of the oxide film without using an exposure step; a second step where the resist glass layer is densified by baking the resist glass layer; and a third step where the oxide film is partially removed using the resist glass layer as a mask, wherein the resist glass layer is made of resist glass which contains at least SiO, BO, AlO, and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na, K, and Zn.

Method of manufacturing semiconductor device and resist glass

Provided is a method of manufacturing a semiconductor device according to the present invention, a ring-shaped electrode platewith an opening having a diameter smaller than a diameter of a semiconductor wafer W is disposed between a first electrode plateand a second electrode plate, the semiconductor wafer W is arranged between the ring-shaped electrode plateand the second electrode plate, and a glass film is formed on a glass film forming scheduled surface in a state where a potential lower than a potential Vof the second electrode plateis applied to the ring-shaped electrode plate. According to the method of manufacturing a semiconductor device of the present invention, even when the glass film forming step is performed using the semiconductor wafer where the base insulating film is formed on the glass film forming scheduled surface as the semiconductor wafer, lowering of deposition efficiency of fine glass particles on the outer peripheral portion of the semiconductor wafer can be suppressed and hence, highly reliable semiconductor devices can be manufactured with high productivity.

Method of manufacturing semiconductor device and glass film forming apparatus

A wide gap semiconductor device comprises a first conductive-type semiconductor layer (); a second conductive-type region (), () that is provided on the first conductive-type semiconductor layer (); a first electrode (), of which a part is disposed on the second conductive-type region (), () and the other part is disposed on the first conductive-type semiconductor layer (); an insulating layer (), (), () that is provided adjacent to the first electrode () on the first conductive-type semiconductor layer () and that extends to an end part of the wide gap semiconductor device; and a second electrode () that is provided between the first electrode () and the end part of the wide gap semiconductor device and that forms a schottky junction with the first conductive-type semiconductor layer ().

Wide gap semiconductor device and method of manufacturing the same

Provided is a method of manufacturing a semiconductor device which includes, in the following order: a first step of preparing a semiconductor element which includes a pn junction exposure portion; a second step of forming an insulation layer such that the insulation layer covers the pn junction exposure portion; and a third step of forming a glass layer on the insulation layer where a layer made of glass composition for protecting a semiconductor junction is formed on the insulation layer and, thereafter, the layer made of glass composition for protecting a semiconductor junction is baked.

Method of manufacturing semiconductor device and semiconductor device

Provided is a glass composition for protecting a semiconductor junction which contains at least SiO, BO, AlO, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50&#xb0; C. to 550&#xb0; C. falls within a range of 3.33&#xd7;10to 4.13&#xd7;10. A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where 'a glass material containing lead silicate as a main component' is used.

Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device

A resin-sealed semiconductor deviceof the present invention includes: a mesa-type semiconductor elementwhich includes a mesa-type semiconductor base body having a pn-junction exposure portion in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resinwhich seals the mesa-type semiconductor element, wherein the mesa-type semiconductor elementincludes a glass layer which substantially contains no Pb as the glass layer. The resin-sealed semiconductor device of the present invention can acquire higher resistance to a reverse bias at a high temperature than a conventional resin-sealed semiconductor device, although the resin-sealed semiconductor device of the present invention has the structure where the mesa-type semiconductor element is molded with a resin in the same manner as the conventional resin-sealed semiconductor device.

Resin-sealed semiconductor device and method of manufacturing resin-sealed semiconductor device

A resin-sealed semiconductor device includes a mesa-type semiconductor element which includes a mesa-type semiconductor base body having a pn junction exposure portion in an outer peripheral tapered region surrounding a mesa region, and a glass layer which covers at least the outer peripheral tapered region; and a molding resin which seals the mesa-type semiconductor element, wherein the glass layer is formed by forming a layer made of a predetermined glass composition for protecting a semiconductor junction which substantially contains no Pb such that the layer covers the outer peripheral tapered region and, subsequently, by baking the layer made of the glass composition for protecting a semiconductor junction.

Resin-sealed semiconductor device and method of manufacturing the same

A glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a glass raw material which contains at least ZnO, SiO, BO, AlOand at least two oxides of alkaline earth metals selected from a group consisting of BaO, CaO and MgO and substantially contains none of Pb, As, Sb, Li, Na and K, the glass composition for protecting a semiconductor junction containing no filler.

A glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a raw material which contains at least SiO, BO, AlOand oxide of alkaline earth metal and substantially contains none of Pb, As, Sb, Li, Na, K and Zn, and contains no filler.

Provided is a glass composition for protecting a semiconductor junction which contains at least SiO, AlO, ZnO, CaO and 3 mol % to 10 mol % of BO, and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiOfalls within a range of 32 mol % to 48 mol %, a content of AlOfalls within a range of 9 mol % to 13 mol %, a content of ZnO falls within a range of 18 mol % to 28 mol %, a content of CaO falls within a range of 15 mol % to 23 mol %, and a content of BOfalls within a range of 3 mol % to 10 mol %.

A glass composition for protecting a semiconductor junction contains at least SiO, BO, AlO, ZnO, and at least two oxides of alkaline earth metal selected from the group consisting of CaO, MgO and BaO, and substantially contains none of Pb, P, As, Sb, Li, Na and K.

A power unit for a vehicle can avoid an increase in the longitudinal size of an engine body and a vehicle body due to the provision of a clutch actuator. Clutches for switching between the connection and disconnection of the transmission of power are provided in a power transmission path for transmitting a rotational drive force of a crankshaft to a drive wheel. A clutch cover is joined to a side portion of a crankcase. A clutch chamber for accommodating the clutches is formed between the crankcase and the clutch cover. A clutch actuator for controlling the switching between an engaged condition and disengaged condition of the clutches is mounted on an engine body. The clutch actuator is provided on an upper portion of the clutch cover.

Power unit for vehicle

A transmission device for an internal combustion engine for preventing components thereof from being damaged for making the components smaller in size and weight, reducing a load and a time required to shift gear positions for increased operability and for reducing overall size and weight. A transmission device for an internal combustion engine includes a shift drum angularly movable by a star-shaped drum plate that is turned when a change spindle is turned and a stopper roller for limiting the star-shaped drum plate against turning movement. The star-shaped drum plate includes peaks corresponding to a plurality of gear positions and valleys interposed between the peaks. A selected one of the valleys includes a curved wall for being more gently contacted by the stopper roller than curved surfaces of the other valleys which are contacted by the stopper roller.

Transmission device for internal combustion engine

Growing community of inventors

Saitama, Japan

Atsushi Ogasawara