Jx Nippon Mining Metals Corporation

Jx Metals Corporation

Jx Advanced Metals Corporation

Atsushi Nara

Ryo Suzuki

Hideo Takami

Shin-ichi Ogino

Hiroshi Takamura

Ryosuke Sakashita

Hideto Seki

A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a NbOpowder, a KCopowder, and a NaCopowder, pulverizing the mixed powder to achieve a grain size dof 100 μm or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm. A high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method is provided.

Potassium sodium niobate sputtering target and production method thereof

A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a NbOpowder, a KCopowder, and a NaCopowder, pulverizing the mixed powder to achieve a grain size dof 100 μm or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm. The present invention aims to provide a high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method.

A sintered compact essentially consisting of zinc (Zn), gallium (Ga), silicon (Si) and oxygen (O), wherein a Zn content expressed in terms of ZnO is 5 to 60 mol %, a Ga content expressed in terms of GaOis 8.5 to 90 mol %, and a Si content expressed in terms of SiOis 0 to 45 mol %, and the sintered compact satisfies a condition of A&#x2264;(B+2C) when the Zn content expressed in terms of ZnO is A (mol %), the Ga content expressed in terms of GaOis B (mol %), and the Si content expressed in terms of SiOis C (mol %), and has a relative density of 90% or higher. An object of this invention is to efficiently obtain an amorphous film having high transmissivity and a low refractive index without having to introduce oxygen into the atmosphere during film deposition by DC sputtering.

Oxide sintered compact, oxide sputtering target, and oxide thin film

A sputtering target for a magnetic recording film containing SiO, wherein a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, magnetically and finely separating the single-domain particles after deposition, and improving the recording density.

Sputtering target for magnetic recording film and process for production thereof

Provided is a sputtering target containing SiOfor a magnetic recording film, wherein a ratio of the peak intensity of cristobalites, which are crystallized SiO, to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less. The present invention aims to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, and shortening the burn-in time.

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Ibaraki, Japan

Atsushi Nara