Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Fujitsu Corporation

Atsushi Murakoshi

Kyoichi Suguro

Fumitaka Arai

Tatsuya Kato

Katsuyuki Sekine

Yuta Watanabe

Katsuya Okumura

Satoshi Nagashima

Keisuke Kikutani

Ichiro Mizushima

Kouji Matsuo

Masao Iwase

Katsunori Yahashi

Masahiko Yoshiki

Masaharu Watanabe

Tsubasa Harada

Tatsuya Hatanaka

Mitsuo Koike

Hiroki Sasaki

Tadayuki Asaishi

Takeshi Hamamoto

Ichiro Omura

Tsuneo Ogura

Yoshitaka Tsunashima

Yasuhito Yoshimizu

Akira Nishiyama

Kazuaki Nakajima

Daisuke Matsushita

Satoshi Inaba

Tohru Ozaki

Koichi Sugiyama

Toshihiko Iinuma

Masakazu Yamaguchi

Masami Aoki

Keiichi Sawa

Yoshiaki Matsushita

Kazuya Matsuzawa

Yasushi Akasaka

Osamu Arisumi

Masanobu Tsuchitani

Naoyuki Shigyo

Yutaka Ishibashi

Hideki Nozaki

Yasuhiko Sato

Makoto Yoshimi

Haruko Akutsu

Toshiyuki Iwamoto

Kazuhito Furumoto

Hiromi Niiyama

Toshiro Nakanishi

Mamoru Terauchi

Katsumi Yamamoto

Yoshimasa Kawase

Yoko Sakiyama

Kohei Sakaike

Taro Sugizaki

Hitomi Kawaguchiya

Tatsuo Naijo

Ryuji Ohba

Tomofumi Inoue

Shunichi Takeuchi

Katsumi Rikimaru

Tatsuya Shima

Fumio Ohtake

A semiconductor storage device includes a semiconductor substrate and a plurality of first wiring layers stacked above the semiconductor substrate in a first direction orthogonal to the semiconductor substrate, and extending in a second direction intersecting the first direction and parallel to the semiconductor substrate. The device further includes a first memory pillar including a semiconductor layer and a first insulation layer extending in the first direction, the first insulation layer provided between the plurality of first wiring layers and the semiconductor layer so as to contact the semiconductor layer, and charge storage layers provided respectively between the plurality of first wiring layers and the first insulation layer. One or more of the charge storage layers is in contact with the first insulation layer. A plurality of second insulation layers is provided between each of the plurality of first wiring layers and each of the charge storage layers.

Semiconductor storage device

A storage device includes: a plurality of electrode films stacked in a first direction, and extending in a second direction intersecting the first direction; a first semiconductor film provided adjacent to the plurality of electrode films, and extending in the first direction; a first charge holding film provided between one electrode film among the plurality of electrode films, and the semiconductor film, and including any one of a metal, a metal compound, and a high dielectric material; and a second semiconductor film located between the first semiconductor film and the charge holding film, and extending in the first direction along the first semiconductor film. The second semiconductor film is electrically insulated from the plurality of electrode films, the first charge holding film, and the first semiconductor film.

Storage device

In a semiconductor memory device, first insulating films are arranged along a first direction and a second direction and extend in a third direction. Interconnect is disposed between the first insulating films in the first direction and extends in the third direction. Electrodes are disposed between the first insulating films in the first direction on a second direction side of the interconnect, and is arranged along the third direction. Second insulating film is disposed between the interconnect and the electrodes. Semiconductor members are arranged along the third direction between the first insulating films in the second direction and extend in the first direction. The electrode is disposed between the interconnect and the semiconductor members. Third insulating film is disposed between the electrodes and the semiconductor member and is thicker than the second insulating film.

Semiconductor memory device and method for manufacturing the same

A semiconductor memory device includes a first electrode film and a second electrode film spreading along a first direction and a second direction, first insulating plates intermittently disposed along the first direction and each of two columns separated in the second direction from each other, second insulating plates provided between the two columns, intermittently disposed along the first direction and each of n columns, third insulating plates provided between one of the two columns and a column formed of the second insulating plates, intermittently disposed along the first direction, a first insulating member provided between the first insulating plate and the third insulating plate, and a second insulating member provided between the second insulating plate and the third insulating plate. The first electrode film is divided into two parts between the two columns. The second electrode film is divided into {(n+1)&#xd7;2} parts between the two columns.

Semiconductor memory device

According to one embodiment, a semiconductor device includes a substrate and a semiconductor layer. The device further includes a first electrode layer that is provided on a side surface of the semiconductor layer with a first insulating film interposed therebetween. The device further includes a charge storage layer provided on a side surface of the first electrode layer with the second insulating film interposed therebetween.

Semiconductor device and method for manufacturing same

A semiconductor memory device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a first conductive film provided on a first region of the first insulating film, a second conductive film provided on a second region of the first insulating film, a first stacked body provided on the first conductive film, a second stacked body provided on the second conductive film, a first semiconductor pillar, and two conductive pillars. In the first stacked body, a second insulating film and an electrode film are stacked alternately. In the second stacked body, a third insulating film and a first film are stacked alternately. The two conductive pillars extend in the first direction through the second stacked body, are separated from the second conductive film, sandwich the second conductive film, and are connected at a bottom ends of the second conductive pillars to the semiconductor substrate.

A semiconductor memory device includes a first structural body, a second structural body and interconnections. The first and the second structural bodies are separated in a first direction and extend in a second direction. The interconnections are provided between the first structural body and the second structural body, extend in the second direction, and are separated from each other along a third direction. The first and the second structural bodies each includes an insulating member, a column-shaped body and an insulating film. The insulating member and the column-shaped body are disposed in an alternating manner along the second direction and extend in the third direction. The insulating members of the first and second structural bodies make contact with the interconnections.

Semiconductor memory device and method for manufacturing same

According to one embodiment, the first separation film separates the control electrode, the first insulating layer, the charge storage layer, the intermediate insulating layer, the floating electrode layer, and the second insulating layer in a first direction. The second separation film separates a first stacked unit in a second direction. The first stacked unit includes the charge storage layer, the intermediate insulating layer, the floating electrode layer, the second insulating layer, and the semiconductor layer. The second direction intersects the first direction. The second separation film contains silicon.

Semiconductor device and method for manufacturing the same

A semiconductor memory device according to one embodiment, includes a plurality of first interconnects extending in a first direction and arrayed along a second direction crossing the first direction, a plurality of semiconductor pillars arrayed in a row along the first direction in each of spaces among the first interconnects and extending in a third direction crossing the first direction and the second direction, a first electrode disposed between one of the semiconductor pillars and one of the first interconnects, a first insulating film disposed between the first electrode and one of the first interconnects, a first insulating member disposed between the semiconductor pillars in the first direction and extending in the third direction and opposed the first interconnects not via the first insulating film.

According to one embodiment, a semiconductor memory device includes a first array extending in a first direction, a second array extending in the first direction, and a second electrode film. The second array is arranged with the first array in a second direction crossing the first direction. The second electrode film provided between the first array and the second array. The second electrode film extends in the first direction. Each of the first array and the second array include a first structure, a second structure arranged in the first direction, a fourth insulating film provided between the first structure and the second structure, and a third insulating film provided between the first structure and the second electrode film, provided also between the first structure and the fourth insulating film.

According to an embodiment, a semiconductor device includes a substrate provided with a first region including an active element, the substrate including a second region containing boron with a density of 2&#xd7;10cmor more on a surface excluding the first region.

Substrate of semiconductor device, for gettering metallic impurity

According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a silicon film provided on the first insulating film, a metal silicide film provided on the silicon film, a second insulating film provided on the metal silicide film, and an electrode provided on the second insulating film.

According to one embodiment, a nonvolatile semiconductor memory device includes: a semiconductor layer; a first insulating film provided on the semiconductor layer; a floating gate layer provided on the first insulating film; a second insulating film provided on the floating gate layer; and a gate electrode provided on the second insulating film, the first insulating film including silicon, oxygen, and carbon. Concentration of the carbon in a direction from the semiconductor layer side toward the floating gate layer side has a maximum between the semiconductor layer and the floating gate layer, and the maximum being located nearer to the semiconductor layer side than to the floating gate layer side.

Nonvolatile semiconductor memory device, method for manufacturing same, and manufacturing apparatus

According to one embodiment, a semiconductor memory device includes a semiconductor member, a first insulating layer provided on the semiconductor member, a TaN layer provided on the first insulating layer and containing tantalum and nitrogen, a TaSiN layer provided on the TaN layer in contact with the TaN layer and containing tantalum, silicon, and nitrogen, a second insulating layer provided on the TaSiN layer in contact with the TaSiN layer and containing oxygen, and a control electrode provided on the second insulating layer.

Growing community of inventors

Kawasaki, Japan

Atsushi Murakoshi