Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Nec Corporation

Nec Solution Innovators, Ltd.

Atsushi Moriya

Yasuhiro Inokuchi

Yugo Orihashi

Naoharu Nakaiso

Yasuo Kunii

Kotaro Murakami

Takahiro Miyakura

Takaaki Noda

Kensuke Haga

Satoshi Shimamoto

Kiyohiko Maeda

Kiyohisa Ishibashi

Yoshiaki Hashiba

Takashi Ozaki

Masanori Nakayama

Toshiyuki Kikuchi

Kazuhiro Yuasa

Takashi Nakagawa

Katsuhiko Yamamoto

Takashi Yokogawa

Akito Hirano

Yasunobu Koshi

Osamu Kasahara

Yasuhiro Megawa

Tetsuya Marubayashi

Kazuhide Umeda

Tetsuya Takahashi

Yasuhiro Ogawa

Minoru Sakamoto

Junichi Murota

Minoru Kogano

Makoto Sambu

There is provided a technique that includes: (a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature; (b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature; and (c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.

Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus

There is provided a technique that includes: etching a portion of a first film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: supplying an etching gas into a process chamber while raising an internal pressure of the process chamber in a state in which the substrate having the first film formed on the surface of the substrate is accommodated in the process chamber; and lowering the internal pressure of the process chamber by exhausting an interior of the process chamber in a state in which supply of the etching gas into the process chamber is stopped.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes alternately performing supplying a halogen-based first process gas to the substrate in the process chamber, and supplying a non-halogen-based second process gas to the substrate in the process chamber. Further, an internal pressure of the process chamber in the act of supplying the first process gas is set to be higher than an internal pressure of the process chamber in the act of supplying the second process gas.

There is provided a technique that includes partially etching a film formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) setting a temperature of the substrate having the first film formed on the surface to a first temperature; (b) stabilizing an in-plane temperature of the substrate at the first temperature; and (c) lowering the temperature of the substrate having the in-plane temperature stabilized at the first temperature from the first temperature to a second temperature that is lower than the first temperature, wherein in (c), an etching gas is supplied to the substrate for a predetermined period.

Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

The present invention provides a technology that can reduce erroneous detection and detect a suspicious person from an image at high accuracy. A suspicious person detection device according to one example embodiment of the present invention includes: an eye direction detection unit that detects an eye direction of a subject; a face direction detection unit that detects a face direction of the subject; an environment information acquisition unit that acquires environment information indicating arrangement of an object around the subject; and a determination unit that, based on the face direction, the eye direction, and the environment information, determines whether or not the subject is showing suspicious behavior.

Suspicious person detection device, suspicious person detection method, and program

Provided is an information processing apparatus including a detection unit that detects a difference from a previously detected marker in a predetermined marker, by image recognition processing on an image obtained by image-capturing an arrangement place of an article; and an execution unit that executes a process in accordance with the difference.

Information processing apparatus, information processing method, and program

There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the substrate; (b) forming a silicon film on the substrate with the pre-etched surface, by supplying a first silicon-containing gas to the substrate; (c) etching a portion of the silicon film by supplying a second etching gas, which has a different molecular structure from a molecular structure of the first etching gas, to the substrate; and (d) forming an additional silicon film on the etched silicon film by supplying a second silicon-containing gas to the substrate.

There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.

Described herein is a technique capable of suppressing the deviation in the characteristic of the semiconductor device. A method of manufacturing a semiconductor device may include: (a) receiving a data obtained by measuring a width of a first pillar between first grooves in a center region of a substrate and a width of a second pillar between second grooves in a peripheral region of the substrate; and (b) forming a width adjusting film on surfaces of the first grooves and the second grooves such that a sum of the width of the first pillar and a thickness of a first portion of the width adjusting film in the center region and a sum of the width of the second pillar and a thickness of a second portion of the width adjusting film in the peripheral region are within a predetermined range.

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes forming a seed layer on a substrate by alternately performing supplying a halogen-based first process gas to the substrate and supplying a non-halogen-based second process gas to the substrate, and forming a film on the seed layer by supplying a third process gas to the substrate. A pressure of a space where the substrate exists in the act of supplying the first process gas is set higher than a pressure of the space where the substrate exists in the act of supplying the second process gas.

An information processing device includes a first acquisition unit that acquires first biological data, a collation unit that refers to a collation data storage unit that stores a plurality of pieces of second biological data, and collates the first biological data with each piece of the second biological data, a second acquisition unit that acquires attribute information for each piece of the second biological data from an attribute information storage unit that stores attribute information associated with each piece of the second biological data, and a specification unit that compares the attribute information acquired together with the first biological data with the attribute information associated with each piece of the second biological data, and specifies at least one of the pieces of second biological data corresponding to the first biological data, on the basis of a result of the comparison and a result of the collation.

Information processing device, authentication system, authentication method, and program

A method of manufacturing a semiconductor device, includes: loading a substrate including a laminated film including an insulating film and a sacrificial film, a channel hole formed in the laminated film, a charge trapping film formed on a surface in the channel hole, a first channel film formed on a surface of the charge trapping film, and a common source line exposed on the bottom of the channel hole; receiving information on a distribution of hole diameter of the channel hole; and forming a second channel film on a surface of the first channel film by supplying a first processing gas and a second processing gas to a center side and an outer peripheral side of the substrate, respectively, so as to correct the distribution of the hole diameter based on the information.

There is provided a method of manufacturing a semiconductor device, which includes: forming a seed layer doped with a dopant on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a halogen-based first process gas to the substrate, supplying a non-halogen-based second process gas to the substrate, and supplying a dopant gas to the substrate; and supplying a third process gas to the substrate to form a film on the seed layer.

There is provided a method of manufacturing a semiconductor device, including forming a seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a halogen-based first processing gas to the substrate; supplying a non-halogen-based second processing gas to the substrate; and supplying a hydrogen-containing gas to the substrate. Further, the method further includes forming a film on the seed layer by supplying a third processing gas to the substrate.

Growing community of inventors

Toyama, Japan

Atsushi Moriya