Toyoda Gosei Co., Ltd.

Atsushi Miyazaki

Koji Okuno

Koichi Goshonoo

Shugo Nitta

A light emitting element includes a substrate and a first light emitting part and a second light emitting part arranged thereon to emit different colored lights. The first light emitting part includes a first laminate structure where a n-type semiconductor film and a first semiconductor film are laminated, a first capping film and a p-type semiconductor film laminated on the first laminate structure. The second light emitting part includes a second laminate structure where the n-type semiconductor film, the first semiconductor film, a first intermediate film, and a second semiconductor film are laminated, a second capping film and the p-type semiconductor film laminated on the second laminate structure, the first capping film being the first intermediate film. A bandgap of the first intermediate film is higher than the first semiconductor film and the second semiconductor film. The bandgap of the second semiconductor film is lower than the first semiconductor film.

Light-emitting element and method for manufacturing same

A Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an InGaN (0&#x3c;y&#x3c;1) layer, an AlGaN (0&#x3c;x&#x3c;1) layer, and a GaN layer. The n-type-layer-side cladding layer has a four-layer periodic structure including a second GaN layer interposed between the InGaN (0&#x3c;y&#x3c;1) layer and the AlGaN (0&#x3c;x&#x3c;1) layer.

Group III nitride semiconductor light-emitting device including a superlatice layer

The invention provides a Group III nitride semiconductor light-emitting device in which the strain in the light-emitting layer is relaxed, thereby attaining high light emission efficiency, and a method for producing the device. The light-emitting device of the present invention has a substrate, a low-temperature buffer layer, an n-type contact layer, a first ESD layer, a second ESD layer, an n-side superlattice layer, a light-emitting layer, a p-side superlattice layer, a p-type contact layer, an n-type electrode N, a p-type electrode P, and a passivation film F. The second ESD layer has pits X having a mean pit diameter D. The mean pit diameter D is 500 &#x212b; to 3,000 &#x212b;. An InGaN layer included in the n-side superlattice layer has a thickness Y satisfying the following condition: &#x2212;0.029&#xd7;D+82.8&#x2266;Y&#x2266;&#x2212;0.029&#xd7;D+102.8.

Group III nitride semiconductor light-emitting device and method for producing the same

The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein a p-cladding layer has a uniform Mg concentration. A p-cladding layer having a superlattice structure in which AlGaN and InGaN are alternately and repeatedly deposited is formed in two stages of the former process and the latter process where the supply amount of the Mg dopant gas is different. The supply amount of the Mg dopant gas in the latter process is half or less than that in the former process. The thickness of a first p-cladding layer formed in the former process is 60% or less than that of the p-cladding layer, and 160 &#x212b; or less.

Method for producing group III nitride semiconductor light-emitting device

On a light-emitting layer, a p cladding layer of AlGaInN doped with Mg is formed at a temperature of 800&#xb0; C. to 950&#xb0; C. Subsequently, on the p cladding layer, a capping layer of undoped GaN having a thickness of 5 &#x212b; to 100 &#x212b; is formed at the same temperature as employed for a p cladding layer. Next, the temperature is increased to the growth temperature contact layer in the subsequent process. Since the capping layer is formed, and the surface of the p cladding layer is not exposed during heating, excessive doping of Mg or mixture of impurities into the p cladding layer is suppressed. The deterioration of characteristics of the p cladding layer is prevented. Then, on the capping layer, a p contact layer is formed at a temperature of 950&#xb0; C. to 1100&#xb0; C.

Group III nitride semiconductor light-emitting device and production method therefor

The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose driving voltage is reduced. In the production method, a p cladding layer has a superlattice structure in which a p-AlGaN layer having a thickness of 0.5 nm to 10 nm and an InGaN layer are alternately deposited. A growth temperature of the p-AlGaN layer is 800&#xb0; C. to 950&#xb0; C. The InGaN layer having a thickness of one to two monolayers is formed on the p-AlGaN layer, by stopping the supply of TMA, introducing TMI, and increasing the supply amount of Ga source gas while maintaining the p-AlGaN layer at the growth temperature. Thus, the thickness of the p cladding layer can be reduced while maintaining good crystal quality, thereby reducing the driving voltage.

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Kiyosu, Japan

Atsushi Miyazaki