Semiconductor Energy Laboratory Co., Ltd.

Sony Corporation

Atsushi Miyaguchi

Shunpei Yamazaki

Yoshitaka Moriya

Ikuko Kawamata

Hajime Kimura

Yasuyuki Arai

Satohiro Okamoto

Jun Koyama

Hiroki Dembo

Yoshiaki Oikawa

Tatsunori Inoue

Takayuki Ikeda

Hideki Uochi

Takahiko Ishizu

Kiyoshi Kato

Atsuo Isobe

Yoshiyuki Kurokawa

Daisuke Kawae

Satoshi Kobayashi

Kei Takahashi

Takanori Matsuzaki

Munehiro Kozuma

Seiichi Yoneda

Kenichi Iida

Akio Suzuki

A semiconductor device having a novel structure is provided. The semiconductor device includes a p-channel transistor and an n-channel transistor provided over a silicon substrate. One of a source and a drain of the p-channel transistor is electrically connected to a first power supply line, one of a source and a drain of the n-channel transistor is electrically connected to a second power supply line, and the other of the source and the drain of the p-channel transistor is connected to the other of the source and the drain of the n-channel transistor. The p-channel transistor includes a first gate electrode and a first back gate electrode provided to face the first gate electrode with a first channel formation region therebetween. The first back gate electrode is formed using a region where an impurity element imparting conductivity is selectively introduced to the silicon substrate. The n-channel transistor is provided above a layer including the p-channel transistor.

Semiconductor device

To improve color reproduction areas in a display device having light-emitting elements. A display region has a plurality of picture elements. Each picture element includes: first and second pixels each including a light-emitting element which has a chromaticity whose x-coordinate in a CIE-XY chromaticity diagram is 0.50 or more; third and fourth pixels each including a light-emitting element which has a chromaticity whose y-coordinate in the diagram is 0.55 or more; and fifth and sixth pixels each including a light-emitting element which has a chromaticity whose x-coordinate and y-coordinate in the diagram are 0.20 or less and 0.25 or less, respectively. The light-emitting elements in the first and second pixels have different emission spectrums from each other; the light-emitting elements in the third and fourth pixels have different emission spectrums from each other; and the light-emitting elements in the fifth and sixth pixels have different emission spectrums from each other.

Display device and electronic device

A semiconductor device that has reduced power consumption and is capable of non-destructive reading is provided. The semiconductor device includes a first circuit including a first transistor and a first FTJ element, and a second circuit including a second transistor and a second FTJ element. A first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element, and a first terminal of the second transistor is electrically connected to an input terminal of the second FTJ element. A second terminal of the first transistor and a second terminal of the second transistor are electrically connected to a read circuit. In a data writing method, a voltage is applied between the input terminal and the output terminal of each of the first FTJ element and the second FTJ element to polarize the first FTJ element and the second FTJ element. In a data reading method, a differential current flowing through the first FTJ element and the second FTJ element is input to the read circuit.

Semiconductor device with first and second elements and electronic device

The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.

Display device

An arithmetic device and an electronic device having small power consumption is provided. An arithmetic device and an electronic device capable of high-speed operation is provided. An arithmetic device and an electronic device capable of suppressing heat generation is provided. The arithmetic device includes a first arithmetic portion and a second arithmetic portion. The first arithmetic portion includes a first CPU core and a second CPU core. The second arithmetic portion includes a first GPU core and a second GPU core. The CPU cores each have a power gating function and each include a first data retention circuit electrically connected to a flip-flop. The first GPU core includes a second data retention circuit capable of retaining an analog value and reading out the analog value as digital data of two or more bits. The second GPU core includes a third data retention circuit capable of retaining a digital value and reading out the digital value as digital data of one bit. The first to third data retention circuits each include a transistor including an oxide semiconductor and a capacitor.

Arithmetic device and electronic device

An e-book reader in which destruction of a driver circuit at the time when a flexible panel is handled is inhibited. In addition, an e-book reader having a simplified structure. A plurality of flexible display panels each including a display portion in which display control is performed by a scan line driver circuit and a signal line driver circuit, and a binding portion fastening the plurality of display panels together are included. The signal line driver circuit is provided inside the binding portion, and the scan line driver circuit is provided at the edge of the display panel in a direction perpendicular to the binding portion.

Electronic book

A semiconductor device that enables lower power consumption and data storage imitating a human brain is provided. The semiconductor device includes a control unit, a memory unit, and a sensor unit. The memory unit includes a memory circuit and a switching circuit. The memory circuit includes a first transistor and a capacitor. The switching circuit includes a second transistor and a third transistor. The first transistor and the second transistor include a semiconductor layer including a channel formation region with an oxide semiconductor, and a back gate electrode. The control unit has a function of switching a signal supplied to the back gate electrode, in accordance with a signal obtained at the sensor unit.

A semiconductor device having a novel structure is provided. The semiconductor device includes a silicon substrate and a device provided above the silicon substrate. The device includes a transistor and a conductor. The transistor includes a metal oxide in a channel formation region. Conductivity is imparted to the silicon substrate. The conductor is electrically connected to each of a drain of the transistor and the silicon substrate through an opening provided in the device. Heat of the drain of the transistor can be efficiently released through the silicon substrate.

A semiconductor device in which a memory region at each level of a memory device can be changed is provided. The semiconductor device includes a memory device including a first and a second memory circuit and a control circuit. The first memory circuit includes a first capacitor and a first transistor which has a function of holding charges held in the first capacitor. The second memory circuit includes a second transistor, a second capacitor which is electrically connected to a gate of the second transistor, and a third transistor which has a function of holding charges held in the second capacitor. The first and the third transistors each have a semiconductor layer including an oxide semiconductor, a gate, and a back gate. The voltage applied to the back gate of the first or the third transistor is adjusted, whereby the memory region of each of the first and the second memory circuit is changed.

An input system and an electronic apparatus with novel structures are provided. An electronic apparatus whose setting can be changed even when both hands are full is provided. An input system and an electronic apparatus including an imaging device having a function of taking an image of eyes and a detection device having a function of detecting a change of the shape of the eyes from data obtained by the imaging device are provided. Settings are changed in accordance with the change of the shape of the eyes. The settings are changed by a different method from a manual method and the change of the settings can be reflected in display.

Input system and electronic apparatus

To provide a display device including a flexible panel that can be handled without seriously damaging a driver circuit or a connecting portion between circuits. The display device includes a bent portion obtained by bending an element substrate. A circuit for driving the display device is provided in the bent portion and a wiring extends from the circuit, whereby the strength of a portion including the circuit for driving the display device is increased and failure of the circuit is reduced. Furthermore, the element substrate is bent in a connecting portion between an external terminal electrode and an external connecting wiring (FPC) so that the element substrate provided with the external terminal electrode fits the external connecting wiring, whereby the strength of the connecting portion is increased.

To improve color reproduction areas in a display device having light-emitting elements. A display region has a plurality of picture elements. Each picture element includes: first and second pixels each including a light-emitting element which has a chromaticity whose x-coordinate in a CIE-XY chromaticity diagram is 0.50 or more; third and fourth pixels each including a light-emitting element which has a chromaticity whose y-coordinate in the diagram is 0.55 or more; and fifth and sixth pixels each including a light-emitting element which has a chromaticity whose x-coordinate and y-coordinate in the diagram are 0.20 or less and 0.25 or less, respectively. The light-emitting elements in the first and second pixels have different emission spectrums from each other; the light-emitting elements in the third and fourth pixels have different emission spectrums from each other, and the light-emitting elements in the fifth and sixth pixels have different emission spectrums from each other.

A novel storage device is provided. The storage device includes a first wiring, a second wiring, and a first memory cell. The first memory cell includes a first transistor and a first magnetic tunnel junction device. One of a source or a drain of the first transistor is electrically connected to a first wiring. The other of the source or the drain of the first transistor is electrically connected to one terminal of the first magnetic tunnel junction device. Another terminal of the first magnetic tunnel junction device is electrically connected to the second wiring. The first transistor includes an oxide semiconductor in its channel formation region.

Growing community of inventors

Kanagawa, Japan

Atsushi Miyaguchi