Tokyo Ohka Kogyo Co., Ltd.

Oki Electric Industry Co., Ltd.

Tokyo Ohka Kogyo., Ltd.

Atsushi Matsushita

Yasushi Fujii

Kazuto Ohbuchi

Yoshio Hagiwara

Mitsuaki Minato

Hiroyuki Iida

Yoshihiro Inao

Akira Uehara

Koki Tamura

Atsushi Kubo

Tatsuhiro Mitake

Jun Kanamori

Kazuto Obuchi

Hisashi Hori

Kaoru Mizutani

Kaoru Sakamoto

Shinichi Omori

A method for forming a release layer which lies between a substrate and a supporting member and has a property that changes when the release layer absorbs light coming through the supporting member, by carrying out plasma CVD with a high-frequency power that is set so as to be higher than a power at which a mode jump occurs.

Method of manufacturing multilayer body, method of processing substrate, and multilayer body

A laminate including a supporting member which is light transmissive; a supported substrate supported by the supporting member; an adhesive layer provided on a surface of the supported substrate which surface faces toward the supporting member; and a release layer which is made of an inorganic material and is provided between the supporting member and the supported substrate, the release layer having a property that changes when the release layer absorbs light coming through the supporting layer, and the release layer having a flat surface which faces the adhesive layer.

Laminate and method for separating the same

A laminate including a supporting member which is light transmissive; a supported substrate supported by the supporting member; an adhesive layer provided on a surface of the supported substrate which surface faces toward the supporting member; and a release layer which is made of a fluorocarbon and is provided between the supporting member and the supported substrate, the release layer having a property that changes when it absorbs light coming through the supporting member.

A method of manufacturing a laminate including a substrate, a support, and a release layer, the method including a preliminary treatment process of increasing temperatures of the support carried into a reaction chamber and the inside of the reaction chamber by a plasma treatment, and a release layer forming process of supplying a source gas serving as the release layer into the reaction chamber after the preliminary treatment process to form the release layer on the support.

Method of manufacturing laminate

For suppressing decomposition of an organic group (for example, a CHgroup) which is bonded to an Si atom of an organic SOG film for use in a flattening process at the time of an ashing process, there is provided a method comprising the steps of: forming an organic SOG layer directly on a lower wiring layer or on a predetermined film including a hillock protection layer which is formed on the lower wiring layer in advance; forming an upper wiring layer on the organic SOG layer without using an etching back process; forming a via hole through an etching process by using a patterned resist layer provided on the upper wiring layer as a mask; performing an ashing process with a plasma by making ions or radicals which are induced from oxygen gas as a main reactant, under an atmospheric pressure ranging from 0.01 Torr to 30.0 Torr; and filling said via hole with a conductive material so as to electrically connect the lower wiring layer to the upper wiring layer.

Method for forming multi-layer wiring structure

A simultaneous discharge apparatus comprises a plurality of plasma treatment apparatuses and a single high-frequency power supply, in which the plurality of plasma treatment apparatuses are discharged simultaneously using the single high-frequency power supply, the plurality of plasma treatment apparatuses being a plasma treatment apparatus in which a coil electrode is used as an electrode for generating plasma and inductive coupled plasma is mainly generated, wherein a power supply line from the high-frequency power supply is branched into each plasma treatment apparatus through a branch section, and fixed capacitors are provided on the downstream side of the branch section and between the branch section and each plasma treatment apparatus, respectively. It is preferable to adjust the impedance of the fixed capacitor to be 2.3-2.7 times that of the coil electrode which is located on the same downstream side. With this, it is possible to conduct a treatment such as an etching process or an ashing process to a coating film formed on the surface of a material to be treated in each chamber at the same rate.

Simultaneous discharge apparatus

A method of processing a substrate resists unwanted generation of plasma within a waiting chamber of a processing apparatus. The waiting chamber and a processing chamber are depressurized, and an untreated substrate is placed into the processing chamber, by raising a mounting table. A lower opening of the processing chamber is air-tightly closed by an edge portion of the mounting table. Thereafter, gas is introduced into the waiting chamber to increase the pressure therein, and in parallel with this, reactive gas is introduced into the processing chamber, but at a much lower pressure than that of the waiting chamber. Under this condition, high frequency power is applied to electrodes of the processing chamber to generate plasma therein. The likelihood of unwanted plasma generation in the waiting chamber is significantly reduced by the higher pressure therein, relative to the processing chamber.

Processing method for substrate

For suppressing decomposition of an organic group (for example, a CH group) which is bonded to an Si atom of an organic SOG film for use in a flattening process at the time of an ashing process, there is provided a method comprising the steps of: forming an organic SOG layer directly on a lower wiring layer or on a predetermined film including a hillock protection layer which is formed on the lower wiring layer in advance; forming an upper wiring layer on the organic SOG layer without using an etching back process; forming a via hole through an etching process by using a patterned resist layer provided on the upper wiring layer as a mask; performing an ashing process with a plasma by making ions or radicals which are induced from oxygen gas as a main reactant, under an atmospheric pressure ranging from 0.01 Torr to 30.0 Torr; and filling said via hole with a conductive material so as to electrically connect the lower wiring layer to the upper wiring layer.

A coating liquid for forming a silica group coating film having a dielectric constant equal to or less than 3.2, comprises a condensation product which is obtained through hydrolysis of trialkoxysilane within an organic solvent under an acid catalysis; and at least one of polyalkylene glycol and the end alkylation product thereof. The addition amount of the at least one of polyalkylene glycol and the end alkylation product thereof is 10-500 weight % with respect to the solid component of the coating liquid, and the weight-average molecular weight of the polyalkylene glycol and the end alkylation product thereof is 100-10,000.

Coating liquid for forming a silica group coating film having a small dielectric constant

According to the present invention, there is provided a method for processing a coating film, including the steps of forming a silica group coating film having a low dielectric constant on a substrate, etching the silica group coating film through a resist pattern, and processing the silica group coating film with plasma induced from a substantially inactive gas such as helium gas or the like. In this method, the silica group coating film is not damaged when an ashing process is conducted to the resist pattern as a subsequent process, and the low dielectric constant can be maintained.

Methods for processing a coating film and for manufacturing a semiconductor element

According to the present invention, there is provided a method for processing a coating film comprising the steps of forming a silica group coating film having a low dielectric constant on a substrate, conducting an etching process to the silica group coating film through a resist pattern, processing the silica group coating film with plasma induced from inactive gas such as helium gas or the like. In processing according to this method, the silica group coating film is not damaged when an ashing process is conducted to the resist pattern as a subsequent process, and the low dielectric constant of the coating film can be maintained.

For suppressing decomposition of organic group (for example, CH group) during ashing process, which is bonded to Si atom of an organic SOG film or layer for use in flattening process, a method comprises following steps: forming an organic SOG layer directly or through a predetermined film including a hillock protection layer on said lower wiring layer; forming said upper wiring layer on said organic SOG layer without processing of etching back; forming a via hole through an etching process by using a patterned resist layer provided on said upper wiring layer as a mask; performing ashing process with a plasma by making ion or radical which is induced from oxygen gas as a main reactant, under an atmosphere of pressure ranging from 0.01 Torr to 30.0 Torr; and burying said via hole with conductive material so as to electrically connect between said lower wiring layer and said upper wiring layer.

A tubular reaction chamber is mounted on an annular insulating plate disposed on a grounded metallic base plate. A cylindrical outer electrode connected to a high-frequency power supply is disposed around said tubular reaction chamber, and a cylindrical inner electrode is disposed in said reaction chamber coaxially with said cylindrical outer electrode. The cylindrical inner electrode has a plurality of inlet holes defined therein, and a lower end disposed in an opening defined in the metallic base plate and fixed to said metallic base plate. A holder is disposed in said cylindrical inner electrode for supporting a plurality of wafers at spaced intervals.

Coaxial plasma processing apparatus

A plasma processing apparatus has first and second electrodes disposed around a tubular chamber for generating a plasma. Each of the first and second electrodes comprises a plurality of web-shaped electrode segments spaced by a constant distant and disposed substantially halfway around the chamber. Each of the web-shaped electrode segments has opposite ends fastened to a pair of respective insulators disposed diametrically opposite to each other across the chamber. The web-shaped electrode segments of the first electrode are electrically connected to each other by a conductor on one of the insulators, and the web-shaped electrode segments of the second electrode are electrically connected to each other by a conductor on the other conductors. The first electrode is connected to a high-frequency power supply, and the second electrode is connected to ground.

Plasma processing apparatus

A plasma processing apparatus for processing a workpiece such as a semiconductor wafer in a plasma includes a downstream- or coaxial-type chamber for housing the workpiece. A first sheet-like electrode is mounted on an outer circumferential surface of the chamber and electrically connected to a high-frequency power supply, and a second sheet-like electrode is mounted on the outer circumferential surface of the chamber and connected to ground. The first and second sheet-like electrodes are spaced in confronting relationship from each other circumferentially of the chamber across or along the axis thereof. The first and second sheet-like electrodes have respective axial or circumferential arrays of successive teeth, such as rectangular comb teeth, extending circumferentially or axially of the chamber and respective axial or circumferential arrays of successive recesses which complementarily receive the teeth, respectively, in an interdigitating pattern. The teeth have respective edges spaced from the corresponding edges of the recesses by a substantially uniform gap.

Growing community of inventors

Kanagawa, Japan

Atsushi Matsushita