Elpida Memory, Inc.

Renesas Technology Corp.

Mitsubishi Heavy Industries Limited

Fuji Xerox Co., Ltd.

Hitachi Ulsi Systems Co., Ltd.

Ps5 Luxco S.a.r.l.

Atsushi Maekawa

Kazutami Tago

Shuntaro Machida

Kazuo Nojiri

Takashi Yunogami

Takafumi Tokunaga

Shouochi Uno

Yoshitaka Nakamura

Katsunori Tanaka

Shigemi Mandai

Masayuki Shimizu

Hiroyuki Enomoto

Kazuhisa Tsutsumi

Uwe Stein

Masaharu Nishimura

Yutaka Kawata

Toshihide Noguchi

William Rampen

Hauke Karstens

Yasuhiro Korematsu

Stephen Salter

Robert Fox

Soichiro Tomimoto

One method includes sequentially forming an insulating film and a first material film on a semiconductor substrate, forming on the first material film a mask film having a rectangular first opening, and dry-etching the first material film using the mask film as a mask to form an ellipsoidal second opening having its shorter side aligned in a first direction of the first material film. Forming the mask film includes forming a second material film having a side surface that faces the first direction of the first opening, and a third material film having side surfaces facing a second direction of the first opening, and the thickness of the third material film is greater than the thickness of the second material film.

Method for manufacturing semiconductor device

A content distribution apparatus includes a receiving section, a correction section, an evaluation section and a summary generation section. The receiving section receives plural pieces of watching information of target content information and stores the received watching information. Each of the watching information includes information indicating a reproduction start position from which it was started to reproduce the target content information. The correction section corrects each of the reproduction start positions to any of a plurality of predetermined positions. The evaluation section generates evaluation information of each corrected reproduction start position based on the corrected reproduction start position and the stored watching information. The summary generation section extracts a part of the target content information based on the generated evaluation information of the respective corrected reproduction start positions to generate summary information of the target content information.

Content distribution apparatus

There is provided a semiconductor device that includes: a transistor having a gate electrode, a source region, and a drain region; a first inter-layer insulation film covering the transistor; a first contact plug formed penetrating through the first inter-layer insulation film and connected to either the source region or the drain region; a second inter-layer insulation film covering the first contact plug; a groove extending in the second inter-layer insulation film in a same direction as an extending direction of the gate electrode and exposing a top surface of the first contact plug at a bottom thereof; a second contact plug connected to the first contact plug and formed in the groove; and a wiring pattern extending on the second inter-layer insulation film so as to traverse the groove and integrated with the second contact plug.

Method of manufacturing a semiconductor device having a contact plug

An object of the present invention is to provide a wind turbine generator and a tidal current generator equipped with a hydraulic transmission with a combination of a hydraulic pump and a hydraulic motor and which has a superior productivity and maintainability. The wind turbine generatorhas the hydraulic transmissionfor transmitting the rotation energy of a main shaftto a generator. The hydraulic transmissionincludes a hydraulic pumpof variable displacement type which is driven by the main shaft, a hydraulic motorof variable displacement type which is connected to the generator, and a high pressure oil line and a low pressure oil line which are arranged between the hydraulic pumpand the hydraulic motor. The hydraulic transmissionis at least partially constituted of a plurality of modules (Mto M).

Wind turbine generator and tidal current generator with a hydraulic transmission

Semiconductor device having a contact plug and manufacturing method thereof

A method of manufacturing a semiconductor device includes forming an inter-layer insulating film; arranging a plurality of grooves in a surface layer of the inter-layer insulating film; forming embedded insulating films which are embedded in the grooves; arranging a plurality of holes in the inter-layer insulating film and between the embedded insulating films, in a manner such that each hole between the embedded insulating films partially overlaps therewith; forming lower electrodes, each of which has a bottom and a side face, and covers the bottom and side faces of the corresponding hole; forming a capacitance insulating film which covers the lower electrodes; and forming an upper electrode which further covers the capacitance insulating film.

Method of manufacturing semiconductor device having cylinder-type capacitor structure

Method of forming a high-reliability contact plug which prevents a short circuit between the plug and a bit line by applying a material having an etching rate ratio of 100 or more with respect to a silicon nitride film which forms a self-aligned contact plug. After the formation of a bit line, whose top surface and side surfaces are covered with a silicon nitride film, a sacrificial interlayer film is formed which covers the whole surface of the bit line, and a contact hole is formed by etching the sacrificial interlayer film and then the lower-layer interlayer insulating film to form a capacitance contact plug. A column of a capacitance contact plug is then formed by removing the sacrificial interlayer film, a third interlayer insulating film is formed on the column, and part of this interlayer is removed to expose a surface of the contact plug.

Method of manufacturing semiconductor device

In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

Method of manufacture of semiconductor integrated circuit device and semiconductor integrated circuit device

A highly reliable method for forming contact plugs is provided. The method can prevent short circuiting from occurring between self aligned contact plugs and word lines or between self aligned contact plugs and bit lines by applying a material, whose etching speed ratio relative to that of the silicon-based insulating film is 100 or more, to an interlayer film for forming the contact plugs therein. The method comprises forming wiring lines each of which is covered with silicon oxide films at its top surface and lateral sides, forming a sacrificial interlayer film overall, which is made up of an organic coating film without containing silicon, so as to cover the wiring lines, forming contact holes by sequentially etching the sacrificial interlayer film and a lower-layer insulating film, and forming contact plugs. The method further comprises forming columns of the contact plugs by removing the sacrificial interlayer film, forming an interlayer insulating film overall, and partially removing the interlayer insulating film from above the surface thereof to expose the surfaces of the capacitor contact plugs.

Method for manufacturing a semiconductor device

Method of manufacture of semiconductor integrated circuit

The following defects are suppressed: when an interlayer insulating film including a silicon carbide film and an organic insulating film is dry-etched to form interconnection grooves over underlying Cu interconnections, an insulating reactant adheres to the surface of the underlying Cu interconnections exposed to the bottom of the interconnection grooves, or the silicon carbide film or the organic insulating film exposed to the side walls of the interconnection grooves are side-etched. When a lamination film made of a silicon oxide film, an organic insulating film, a silicon oxide film, an organic insulating film and a silicon carbide film is dry-etched to form interconnection grooves over Cu interconnections, a mixed gas of SF and NH is used as an etching gas for the silicon carbide film to work side walls of the interconnection grooves perpendicularly and further suppress defects that a deposit or a reactant adheres to the surface of the Cu interconnections exposed to the bottom of the interconnection grooves.

Fabrication method of semiconductor integrated circuit device

A combustor can simultaneously reduce the amount of NOx exhaust and combustion oscillation. The combustor has an internal cylinder which accommodates a premixing nozzle and an external cylinder which accommodates the internal cylinder, and includes an air flow passage which supplies air from a compressor to the premixing nozzle. The air flow passage is provided with a punched metal plate near the maximum velocity fluctuation position whereat the velocity fluctuation of the air flow increases to a maximum.

Combustor, a gas turbine, and a jet engine

Growing community of inventors

Tokyo, Japan

Atsushi Maekawa