Sanyo Electric Co., Ltd.

Research Development Corporation of Japan

Atsushi Maeda

Minoru Kume

Satoru Oikawa

Toshio Tanuma

Kazuhiko Kuroki

Masayuki Fujita

Takashi Umemoto

Teruhiro Yamada

Tsugufumi Matsuoka

Koji Yamano

Kouji Yamano

A user support system employing agent technology is provided. The entrance server identifies the user command by matching it with a collection of anticipated user commands. An index search is performed to identify the contents of the user command. The identified user command is then used to determine which specialized server should respond to the user command. The specialized server contains a collection of action patterns for an agent to use in responding to a user command. An agent supports a user in searching for information and/or navigating to the desired information through friendly conversation with that user. The entrance server is configured as a portal site and a specialized server is provided for each specialized field.

User support apparatus and system using agents

A YIG film formed on a GGG substrate is separated by a stepwise groove for preparing YIG films having different intervals between end surfaces, and two YIG films resonating magnetostatic waves between the end surfaces having different intervals are coupled with each other thereby forming a resonator.

Magnetostatic wave device and disturbance wave eliminator

A magnetoresistive film is disclosed which has a layered structure comprising a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic conductive layer interposed between the first and second ferromagnetic layers, and an antiferromagnetic layer coupled with one of the first and second ferromagnetic layers. The antiferromagnetic layer comprises an antiferromagnetic material selected from an antimony-base alloy, fluoride, an FeRh-base alloy, FeS, an IrMnCo-base alloy and a CrAl-base alloy.

Magnetoresistive film

Magnetoresistive element

Disclosed is a magnetoresistive film which includes an antiferromagnetic layer, a first amorphous ferromagnetic layer, a crystalline ferromagnetic interlayer disposed between the antiferromagnetic layer and the first amorphous ferromagnetic layer, a nonmagnetic conductive layer provided on the first amorphous ferromagnetic layer and a ferromagnetic layer provided on the nonmagnetic conductive layer.

A magnetoresistive device has an alloy film, including a ferromagnetic substance and a non-magnetic substance which is not soluble in solid phase in the ferromagnetic substance or is in a eutectic relation with the ferromagentic substance. The ferromagnetic substance forms grains in the non-magnetic substance, and the grains preferably have anisotropic shapes. The non-magnetic substance is conducting. The alloy film is composed of a plurality of alloy film stripes. Alternatively the magneto-resistive device includes a non-magnetic layer arranged between first and second magnetic layers, wherein the non-magnetic layer has 10 to 50 weight percent of grains of a magnetic substance dispersed therein.

Magnetoresistive device

A magnetoresistance effect element includes a non-magnetic substrate, a ferromagnetic dispersion layer or a ferromagnetic layer, and a non-magnetic metal film. The ferromagnetic dispersion layer is a layer of a ferromagnetic metal or alloy that is independently and dispersedly formed on the substrate. The alternative ferromagnetic layer is a layer of a ferromagnetic metal or alloy that is formed on the substrate with a textured surface. The non-magnetic metal film is made of at least one atomic element having a non-soluble relation with the ferromagnetic metal or alloy, and is formed on the non-magnetic substrate and the ferromagnetic dispersion layer or the ferromagnetic layer.

Magnetoresistance effect element

A magnetoresistive element includes a substrate, a magnetoresistive film arranged on the substrate and prepared from a non-magnetic conductive metal film containing grains consisting of a ferromagnetic metal atom or a ferromagnetic metal alloy dispersed therein so that the grain concentration is varied along the film thickness direction, a pair of current feeding electrodes arranged on the magnetoresistive film, and a pair of voltage reading electrodes arranged on the magnetoresistive film.

A magnetoresistive element includes a substrate, and a plurality of fine line structures, which are provided on the substrate to be substantially parallel to each other, and which each have an aspect ratio greater than 1. Each fine line structure has a multilayer structure of a first ferromagnetic layer, a non-magnetic conductive layer and a second ferromagnetic layer. Magnetic moments of the first and second ferromagnetic layers orient antiparallel to each other in a state with no external magnetic field being applied.

A magnetoresistive device includes a substrate and a magnetic film which is formed by alternately stacking magnetic and non-magnetic layers with each other on the substrate. The substrate is prepared to have a texture on its surface, and the magnetic film is formed on this substrate so that a texture is formed along the interface between the magnetic and non-magnetic layers. The texture can be an atomic level texture with step features dimensioned dependent upon the lattice constant, or may be an etched texture of features having desired dimensions in a specified range.

Magnetoresistive device and method of preparing the same

A magnetoresistance-effect element includes a substrate, and a magnetoresistance-effect film disposed on the substrate. The magnetoresistance-effect film includes an alloy film containing ferromagnetic metal atoms and non-magnetic metal atoms, which have the property relative to each other that they are mutually insoluble in both solid and liquid phases. The magnetoresistance-effect film further includes at least three soft magnetic films arranged as discontinuous areas in contact with the alloy film and magnetically coupled therewith for reducing an operating magnetic field strength of the element.

Magnetoresistance-effect element

Magnetorsistance effect element

The invention provides a medium and a method suitable for magneto-optical and multiple recording. The medium includes alternate thin layers of a magnetic rare-earth metal and an electrically conductive material, and has 'magnetic frozen state' at low temperature. The medium may be magnetized to different ferromagnetic states when heated to different temperatures by a controlled laser beam, under an external magnetic field. The different magnetic states permit of multiple recording.

Growing community of inventors

Osaka, Japan

Atsushi Maeda